JAJSU53A June 2015 – April 2024 CSD18542KCS
PRODUCTION DATA
デバイスごとのパッケージ図は、PDF版データシートをご参照ください。
| PARAMETER | TEST CONDITIONS | MIN | TYP | MAX | UNIT | ||
|---|---|---|---|---|---|---|---|
| STATIC CHARACTERISTICS | |||||||
| BVDSS | Drain-to-source voltage | VGS = 0V, ID = 250μA | 60 | V | |||
| IDSS | Drain-to-source leakage current | VGS = 0V, VDS = 48V | 1 | μA | |||
| IGSS | Gate-to-source leakage current | VDS = 0V, VGS = 20V | 100 | nA | |||
| VGS(th) | Gate-to-source threshold voltage | VDS = VGS, ID = 250μA | 1.5 | 1.8 | 2.2 | V | |
| RDS(on) | Drain-to-source on-resistance | VGS = 4.5V, ID = 100A | 4.0 | 5.1 | mΩ | ||
| VGS = 10V, ID = 100A | 3.3 | 4.0 | mΩ | ||||
| gfs | Transconductance | VDS = 30V, ID = 100A | 198 | S | |||
| DYNAMIC CHARACTERISTICS | |||||||
| Ciss | Input capacitance | VGS = 0V, VDS = 30V, ƒ = 1MHz | 3900 | 5070 | pF | ||
| Coss | Output capacitance | 570 | 740 | pF | |||
| Crss | Reverse transfer capacitance | 11 | 14 | pF | |||
| RG | Series gate resistance | 1.3 | 2.6 | Ω | |||
| Qg | Gate charge total (4.5V) | VDS = 30V, ID = 100A | 21 | 27 | nC | ||
| Qg | Gate charge total (10V) | 44 | 57 | nC | |||
| Qgd | Gate charge gate-to-drain | 6.9 | nC | ||||
| Qgs | Gate charge gate-to-source | 10 | nC | ||||
| Qg(th) | Gate charge at Vth | 7.3 | nC | ||||
| Qoss | Output charge | VDS = 30V, VGS = 0V | 63 | nC | |||
| td(on) | Turn on delay time | VDS =
30V, VGS = 10V, IDS = 100A, RG = 0Ω | 6 | ns | |||
| tr | Rise time | 5 | ns | ||||
| td(off) | Turn off delay time | 18 | ns | ||||
| tf | Fall time | 21 | ns | ||||
| DIODE CHARACTERISTICS | |||||||
| VSD | Diode forward voltage | ISD = 100A, VGS = 0V | 0.9 | 1.0 | V | ||
| Qrr | Reverse recovery charge | VDS=
30V, IF = 100A, di/dt = 300A/μs | 148 | nC | |||
| trr | Reverse recovery time | 53 | ns | ||||