SLPS590B March   2016  – June 2024 CSD18542KTT

PRODUCTION DATA  

  1.   1
  2. 1Features
  3. 2Applications
  4. 3Description
  5. 4Specifications
    1. 4.1 Electrical Characteristics
    2. 4.2 Thermal Information
    3. 4.3 Typical MOSFET Characteristics
  6. 5Device and Documentation Support
    1. 5.1 Receiving Notification of Documentation Updates
    2. 5.2 Support Resources
    3. 5.3 Trademarks
    4. 5.4 Electrostatic Discharge Caution
    5. 5.5 Glossary
  7. 6Revision History
  8. 7Mechanical, Packaging, and Orderable Information

パッケージ・オプション

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メカニカル・データ（パッケージ｜ピン）
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発注情報

4.3 Typical MOSFET Characteristics

TA = 25°C (unless otherwise stated)

CSD18542KTT Transient Thermal Impedance
Figure 4-1 Transient Thermal Impedance
CSD18542KTT Saturation Characteristics
Figure 4-2 Saturation Characteristics
CSD18542KTT Gate Charge
ID = 100A VDS = 30V
Figure 4-4 Gate Charge
CSD18542KTT Threshold Voltage vs Temperature
ID = 250µA
Figure 4-6 Threshold Voltage vs Temperature
CSD18542KTT Normalized On-State Resistance vs Temperature
ID = 100A
Figure 4-8 Normalized On-State Resistance vs Temperature
CSD18542KTT Maximum Safe Operating Area
Single pulse, max RθJC = 0.6°C/W
Figure 4-10 Maximum Safe Operating Area
CSD18542KTT Maximum Drain Current vs Temperature
Figure 4-12 Maximum Drain Current vs Temperature
CSD18542KTT Transfer Characteristics
VDS = 5V
Figure 4-3 Transfer Characteristics
CSD18542KTT Capacitance
Figure 4-5 Capacitance
CSD18542KTT On-State Resistance vs Gate-to-Source Voltage
Figure 4-7 On-State Resistance vs Gate-to-Source Voltage
CSD18542KTT Typical Diode Forward Voltage
Figure 4-9 Typical Diode Forward Voltage
CSD18542KTT Single Pulse Unclamped Inductive Switching
Figure 4-11 Single Pulse Unclamped Inductive Switching