3 Description

This 60V, 3.3mΩ, D²PAK (TO-263) NexFET™ power MOSFET is designed to minimize losses in power conversion applications.

Product Summary

T_A = 25°C		TYPICAL VALUE		UNIT
V_DS	Drain-to-Source Voltage	60		V
Q_g	Gate Charge Total (10V)	44		nC
Q_gd	Gate Charge Gate-to-Drain	6.9		nC
R_DS(on)	Drain-to-Source On Resistance	V_GS = 4.5V	4.0	mΩ
R_DS(on)	Drain-to-Source On Resistance	V_GS = 10V	3.3	mΩ
V_GS(th)	Threshold Voltage	1.8		V

Device Information⁽¹⁾

DEVICE	QTY	MEDIA	PACKAGE	SHIP
CSD18542KTT	500	13-Inch Reel	D²PAK Plastic Package	Tape and Reel
CSD18542KTTT	50	13-Inch Reel	D²PAK Plastic Package	Tape and Reel

(1) For all available packages, see the orderable addendum at the end of the data sheet.

Absolute Maximum Ratings

T_A = 25°C		VALUE	UNIT
V_DS	Drain-to-Source Voltage	60	V
V_GS	Gate-to-Source Voltage	±20	V
I_D	Continuous Drain Current (Package Limited)	200	A
	Continuous Drain Current (Silicon Limited), T_C = 25°C	170
	Continuous Drain Current (Silicon Limited), T_C = 100°C	120
I_DM	Pulsed Drain Current⁽¹⁾	400	A
P_D	Power Dissipation	250	W
T_J, T_stg	Operating Junction, Storage Temperature	–55 to 175	°C
E_AS	Avalanche Energy, Single Pulse I_D = 75A, L = 0.1mH, R_G = 25Ω	281	mJ

(1) Max R_θJC = 0.6°C/W, pulse duration ≤ 100μs, duty cycle ≤ 1%.

R_DS(on) vs V_GS

Gate Charge