JAJSU56B January 2014 – April 2024 CSD19501KCS
PRODUCTION DATA
デバイスごとのパッケージ図は、PDF版データシートをご参照ください。
| PARAMETER | TEST CONDITIONS | MIN | TYP | MAX | UNIT | ||
|---|---|---|---|---|---|---|---|
| STATIC CHARACTERISTICS | |||||||
| BVDSS | Drain-to-Source Voltage | VGS = 0V, ID = 250μA | 80 | V | |||
| IDSS | Drain-to-Source Leakage Current | VGS = 0V, VDS = 64V | 1 | μA | |||
| IGSS | Gate-to-Source Leakage Current | VDS = 0V, VGS = 20V | 100 | nA | |||
| VGS(th) | Gate-to-Source Threshold Voltage | VDS = VGS, ID = 250μA | 2.2 | 2.6 | 3.2 | V | |
| RDS(on) | Drain-to-Source On-Resistance | VGS = 6V, ID = 60A | 6.2 | 7.9 | mΩ | ||
| VGS = 10V, ID = 60A | 5.5 | 6.6 | mΩ | ||||
| gfs | Transconductance | VDS = 8V, ID = 60A | 137 | S | |||
| DYNAMIC CHARACTERISTICS | |||||||
| Ciss | Input Capacitance | VGS = 0V, VDS = 40V, ƒ = 1 MHz | 3060 | 3980 | pF | ||
| Coss | Output Capacitance | 784 | 1020 | pF | |||
| Crss | Reverse Transfer Capacitance | 12.4 | 16.1 | pF | |||
| RG | Series Gate Resistance | 1.3 | 2.6 | Ω | |||
| Qg | Gate Charge Total (10V) | VDS = 40V, ID = 60A | 38 | 50 | nC | ||
| Qgd | Gate Charge Gate-to-Drain | 5.8 | nC | ||||
| Qgs | Gate Charge Gate-to-Source | 12.4 | nC | ||||
| Qg(th) | Gate Charge at Vth | 7.5 | nC | ||||
| Qoss | Output Charge | VDS = 40V, VGS = 0V | 98 | nC | |||
| td(on) | Turn On Delay Time | VDS =
50V, VGS = 10V, IDS = 60A, RG = 0Ω | 21 | ns | |||
| tr | Rise Time | 15 | ns | ||||
| td(off) | Turn Off Delay Time | 39 | ns | ||||
| tf | Fall Time | 5 | ns | ||||
| DIODE CHARACTERISTICS | |||||||
| VSD | Diode Forward Voltage | ISD = 60A, VGS = 0V | 0.9 | 1.1 | V | ||
| Qrr | Reverse Recovery Charge | VDS=
40V, IF = 60A, di/dt = 300A/μs | 230 | nC | |||
| trr | Reverse Recovery Time | 74 | ns | ||||