SLPS413B December   2013  – May 2017 CSD19502Q5B

PRODUCTION DATA.  

  1. 1Features
  2. 2Applications
  3. 3Description
  4. 4Revision History
  5. 5Specifications
    1. 5.1 Electrical Characteristics
    2. 5.2 Thermal Information
    3. 5.3 Typical MOSFET Characteristics
  6. 6Device and Documentation Support
    1. 6.1 Receiving Notification of Documentation Updates
    2. 6.2 Community Resources
    3. 6.3 Trademarks
    4. 6.4 Electrostatic Discharge Caution
    5. 6.5 Glossary
  7. 7Mechanical, Packaging, and Orderable Information
    1. 7.1 Q5B Package Dimensions
    2. 7.2 Recommended PCB Pattern
    3. 7.3 Recommended Stencil Pattern
    4. 7.4 Q5B Tape and Reel Information

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発注情報

5 Specifications

5.1 Electrical Characteristics

(TA = 25°C unless otherwise stated)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
STATIC CHARACTERISTICS
BVDSS Drain-to-Source Voltage VGS = 0 V, ID = 250 μA 80 V
IDSS Drain-to-Source Leakage Current VGS = 0 V, VDS = 64 V 1 μA
IGSS Gate-to-Source Leakage Current VDS = 0 V, VGS = 20 V 100 nA
VGS(th) Gate-to-Source Threshold Voltage VDS = VGS, ID = 250 μA 2.2 2.7 3.3 V
RDS(on) Drain-to-Source On Resistance VGS = 6 V, ID = 19 A 3.8 4.8 mΩ
VGS = 10 V, ID = 19 A 3.4 4.1 mΩ
gfs Transconductance VDS = 8 V, ID = 19 A 88 S
DYNAMIC CHARACTERISTICS
Ciss Input Capacitance VGS = 0 V, VDS = 40 V, ƒ = 1 MHz 3750 4870 pF
Coss Output Capacitance 925 1202 pF
Crss Reverse Transfer Capacitance 17 22 pF
RG Series Gate Resistance 1.2 2.4 Ω
Qg Gate Charge Total (10 V) VDS = 40 V, ID = 19 A 48 62 nC
Qgd Gate Charge Gate to Drain 8.6 nC
Qgs Gate Charge Gate to Source 14 nC
Qg(th) Gate Charge at Vth 10 nC
Qoss Output Charge VDS = 40 V, VGS = 0 V 130 nC
td(on) Turn On Delay Time VDS = 40 V, VGS = 10 V,
IDS = 19 A, RG = 0 Ω		 8 ns
tr Rise Time 6 ns
td(off) Turn Off Delay Time 22 ns
tf Fall Time 7 ns
DIODE CHARACTERISTICS
VSD Diode Forward Voltage ISD = 19 A, VGS = 0 V 0.8 1 V
Qrr Reverse Recovery Charge VDS= 40 V, IF = 19 A,
di/dt = 300 A/μs		 275 nC
trr Reverse Recovery Time 72 ns

5.2 Thermal Information

(TA = 25°C unless otherwise stated)
THERMAL METRIC MIN TYP MAX UNIT
RθJC Junction-to-Case Thermal Resistance(1) 0.8 °C/W
RθJA Junction-to-Ambient Thermal Resistance (1)(2) 50
(1) RθJC is determined with the device mounted on a 1-inch2 (6.45-cm2), 2-oz. (0.071-mm thick) Cu pad on a 1.5-inches × 1.5-inches (3.81-cm × 3.81-cm), 0.06-inch (1.52-mm) thick FR4 PCB. RθJC is specified by design, whereas RθJA is determined by the user’s board design.
(2) Device mounted on FR4 material with 1-inch2 (6.45-cm2), 2-oz. (0.071-mm thick) Cu.

CSD19502Q5B M0137-01_LPS198.gif
Max RθJA = 50°C/W when mounted on 1 inch2 (6.45 cm2) of
2-oz. (0.071-mm thick) Cu.
CSD19502Q5B M0137-02_LPS198.gif
Max RθJA = 125°C/W when mounted on a minimum pad area of 2-oz. (0.071-mm thick) Cu.

5.3 Typical MOSFET Characteristics

(TA = 25°C unless otherwise stated)
CSD19502Q5B graph01p2_SLPS414.png
Figure 1. Transient Thermal Impedance
CSD19502Q5B graph02_SLPS413.png
Figure 2. Saturation Characteristics
CSD19502Q5B graph04_SLPS413.png
Figure 4. Gate Charge
CSD19502Q5B graph06p2_SLPS413.png
Figure 6. Threshold Voltage vs Temperature
CSD19502Q5B graph08_SLPS413.png
Figure 8. Normalized On-State Resistance vs Temperature
CSD19502Q5B graph10_SLPS413A.png
Figure 10. Maximum Safe Operating Area
CSD19502Q5B graph12_SLPS413.png
Figure 12. Maximum Drain Current vs Temperature
CSD19502Q5B graph03_SLPS413.png
Figure 3. Transfer Characteristics
CSD19502Q5B graph05_SLPS413.png
Figure 5. Capacitance
CSD19502Q5B graph07_SLPS413.png
Figure 7. On-State Resistance vs Gate-to-Source Voltage
CSD19502Q5B graph09_SLPS413.png
Figure 9. Typical Diode Forward Voltage
CSD19502Q5B graph11_SLPS413.png
Figure 11. Single Pulse Unclamped Inductive Switching