SLPS586 March   2016 CSD19506KTT

PRODUCTION DATA.  

  1. 1Features
  2. 2Applications
  3. 3Description
  4. 4Revision History
  5. 5Specifications
    1. 5.1 Electrical Characteristics
    2. 5.2 Thermal Information
    3. 5.3 Typical MOSFET Characteristics
  6. 6Device and Documentation Support
    1. 6.1 Community Resources
    2. 6.2 Trademarks
    3. 6.3 Electrostatic Discharge Caution
    4. 6.4 Glossary
  7. 7Mechanical, Packaging, and Orderable Information
    1. 7.1 KTT Package Dimensions
    2. 7.2 Recommended PCB Pattern
    3. 7.3 Recommended Stencil Opening (0.125 mm Stencil Thickness)

パッケージ・オプション

デバイスごとのパッケージ図は、PDF版データシートをご参照ください。

メカニカル・データ（パッケージ｜ピン）
  • KTT|2
サーマルパッド・メカニカル・データ
発注情報

5 Specifications

5.1 Electrical Characteristics

(TA = 25°C unless otherwise stated)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
STATIC CHARACTERISTICS
BVDSS Drain-to-source voltage VGS = 0 V, ID = 250 μA 80 V
IDSS Drain-to-source leakage current VGS = 0 V, VDS = 64 V 1 μA
IGSS Gate-to-source leakage current VDS = 0 V, VGS = 20 V 100 nA
VGS(th) Gate-to-source threshold voltage VDS = VGS, ID = 250 μA 2.1 2.5 3.2 V
RDS(on) Drain-to-source on-resistance VGS = 6 V, ID = 100 A 2.2 2.8 mΩ
VGS = 10 V, ID = 100 A 2.0 2.3 mΩ
gfs Transconductance VDS = 8 V, ID = 100 A 297 S
DYNAMIC CHARACTERISTICS
Ciss Input capacitance VGS = 0 V, VDS = 40 V, ƒ = 1 MHz 9380 12200 pF
Coss Output capacitance 2260 2940 pF
Crss Reverse transfer capacitance 42 55 pF
RG Series gate resistance 1.3 2.6 Ω
Qg Gate charge total (10 V) VDS = 40 V, ID = 100 A 120 156 nC
Qgd Gate charge gate-to-drain 20 nC
Qgs Gate charge gate-to-source 37 nC
Qg(th) Gate charge at Vth 25 nC
Qoss Output charge VDS = 40 V, VGS = 0 V 345 nC
td(on) Turn on delay time VDS = 40 V, VGS = 10 V,
IDS = 100 A, RG = 0 Ω		 14 ns
tr Rise time 7 ns
td(off) Turn off delay time 30 ns
tf Fall time 5 ns
DIODE CHARACTERISTICS
VSD Diode forward voltage ISD = 100 A, VGS = 0 V 0.9 1.1 V
Qrr Reverse recovery charge VDS= 40 V, IF = 100 A,
di/dt = 300 A/μs		 525 nC
trr Reverse recovery time 107 ns

5.2 Thermal Information

(TA = 25°C unless otherwise stated)
THERMAL METRIC MIN TYP MAX UNIT
RθJC Junction-to-case thermal resistance 0.4 °C/W
RθJA Junction-to-ambient thermal resistance 62 °C/W

5.3 Typical MOSFET Characteristics

(TA = 25°C unless otherwise stated)
CSD19506KTT D001_SLPS586.png
Figure 1. Transient Thermal Impedance
CSD19506KTT D002_SLPS586.gif
Figure 2. Saturation Characteristics
CSD19506KTT D003_SLPS586.gif
VDS = 5 V
Figure 3. Transfer Characteristics
CSD19506KTT D004_SLPS586.gif
VDS = 40 V ID = 100 A
Figure 4. Gate Charge
CSD19506KTT D006_SLPS586.gif
ID = 250 µA
Figure 6. Threshold Voltage vs Temperature
CSD19506KTT D008_SLPS586.gif
ID = 60 A
Figure 8. Normalized On-State Resistance vs Temperature
CSD19506KTT D010_SLPS586.gif
Single Pulse, Max RθJC = 0.4°C/W
Figure 10. Maximum Safe Operating Area
CSD19506KTT D012_SLPS586.gif
Figure 12. Maximum Drain Current vs Temperature
CSD19506KTT D005_SLPS586.gif
Figure 5. Capacitance
CSD19506KTT D007_SLPS586.gif
Figure 7. On-State Resistance vs Gate-To-Source Voltage
CSD19506KTT D009_SLPS586.gif
Figure 9. Typical Diode Forward Voltage
CSD19506KTT D011_SLPS586.gif
Figure 11. Single Pulse Unclamped Inductive Switching