JAJSUN6D September 2013 – May 2024 CSD19531KCS
PRODUCTION DATA
デバイスごとのパッケージ図は、PDF版データシートをご参照ください。
| PARAMETER | TEST CONDITIONS | MIN | TYP | MAX | UNIT | ||
|---|---|---|---|---|---|---|---|
| STATIC CHARACTERISTICS | |||||||
| BVDSS | Drain-to-source voltage | VGS = 0V, ID = 250μA | 100 | V | |||
| IDSS | Drain-to-source leakage current | VGS = 0V, VDS = 80V | 1 | μA | |||
| IGSS | Gate-to-source leakage current | VDS = 0V, VGS = 20V | 100 | nA | |||
| VGS(th) | Gate-to-source threshold voltage | VDS = VGS, ID = 250μA | 2.2 | 2.7 | 3.3 | V | |
| RDS(on) | Drain-to-source on resistance | VGS = 6V, ID = 60A | 7.3 | 8.8 | mΩ | ||
| VGS = 10V, ID = 60A | 6.4 | 7.7 | |||||
| gfs | Transconductance | VDS = 10V, ID = 60A | 137 | S | |||
| DYNAMIC CHARACTERISTICS | |||||||
| Ciss | Input capacitance | VGS = 0V, VDS = 50V, ƒ = 1MHz | 2980 | 3870 | pF | ||
| Coss | Output capacitance | 560 | 728 | pF | |||
| Crss | Reverse transfer capacitance | 13 | 17 | pF | |||
| RG | Series gate resistance | 1.3 | 2.6 | Ω | |||
| Qg | Gate charge total (10V) | VDS = 50V, ID = 60A | 38 | 49 | nC | ||
| Qgd | Gate charge gate-to-drain | 7.5 | nC | ||||
| Qgs | Gate charge gate-to-source | 11.9 | nC | ||||
| Qg(th) | Gate charge at Vth | 7.3 | nC | ||||
| Qoss | Output charge | VDS = 50V, VGS = 0V | 98 | nC | |||
| td(on) | Turnon delay time | VDS =
50V, VGS = 10V, IDS = 60A, RG = 0Ω | 8.4 | ns | |||
| tr | Rise Time | 7.2 | ns | ||||
| td(off) | Turnoff delay time | 16 | ns | ||||
| tf | Fall time | 4.1 | ns | ||||
| DIODE CHARACTERISTICS | |||||||
| VSD | Diode forward voltage | ISD = 60A, VGS = 0V | 0.9 | 1 | V | ||
| Qrr | Reverse recovery charge | VDS=
50V, IF = 60A, di/dt = 300A/μs | 270 | nC | |||
| trr | Reverse recovery time | 83 | ns | ||||