SLPS483 May 2014 CSD19534Q5A
PRODUCTION DATA.
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This 100 V, 12.6 mΩ, SON 5 mm x 6mm NexFET™ power MOSFET is designed to minimize losses in power conversion applications.
TA = 25°C | TYPICAL VALUE | UNIT | ||
---|---|---|---|---|
VDS | Drain-to-Source Voltage | 100 | V | |
Qg | Gate Charge Total (10 V) | 17 | nC | |
Qgd | Gate Charge Gate to Drain | 3.2 | nC | |
RDS(on) | Drain-to-Source On Resistance | VGS = 6 V | 14.1 | mΩ |
VGS = 10 V | 12.6 | mΩ | ||
VGS(th) | Threshold Voltage | 2.8 | V |
Device | Media | Qty | Package | Ship |
---|---|---|---|---|
CSD19534Q5A | 13-Inch Reel | 2500 | SON 5 x 6 mm Plastic Package |
Tape and Reel |
CSD19534Q5AT | 7-Inch Reel | 250 |
TA = 25°C | VALUE | UNIT | |
---|---|---|---|
VDS | Drain-to-Source Voltage | 100 | V |
VGS | Gate-to-Source Voltage | ±20 | V |
ID | Continuous Drain Current (Package limited) | 50 | A |
Continuous Drain Current (Silicon limited), TC = 25°C | 44 | ||
Continuous Drain Current(1) | 10 | ||
IDM | Pulsed Drain Current(2) | 137 | A |
PD | Power Dissipation(1) | 3.2 | W |
Power Dissipation, TC = 25°C | 63 | ||
TJ, Tstg |
Operating Junction and Storage Temperature Range |
–55 to 150 | °C |
EAS | Avalanche Energy, single pulse ID = 33 A, L = 0.1 mH, RG = 25 Ω |
55 | mJ |
RDS(on) vs VGS |
Gate Charge |