SLPS483 May 2014 CSD19534Q5A
PRODUCTION DATA.
デバイスごとのパッケージ図は、PDF版データシートをご参照ください。
PARAMETER | TEST CONDITIONS | MIN | TYP | MAX | UNIT | ||
---|---|---|---|---|---|---|---|
STATIC CHARACTERISTICS | |||||||
BVDSS | Drain-to-Source Voltage | VGS = 0 V, ID = 250 μA | 100 | V | |||
IDSS | Drain-to-Source Leakage Current | VGS = 0 V, VDS = 80 V | 1 | μA | |||
IGSS | Gate-to-Source Leakage Current | VDS = 0 V, VGS = 20 V | 100 | nA | |||
VGS(th) | Gate-to-Source Threshold Voltage | VDS = VGS, ID = 250 μA | 2.4 | 2.8 | 3.4 | V | |
RDS(on) | Drain-to-Source On Resistance | VGS = 6 V, ID = 10 A | 14.1 | 17.6 | mΩ | ||
VGS = 10 V, ID = 10 A | 12.6 | 15.1 | mΩ | ||||
gfs | Transconductance | VDS = 10 V, ID = 10 A | 47 | S | |||
DYNAMIC CHARACTERISTICS | |||||||
Ciss | Input Capacitance | VGS = 0 V, VDS = 50 V, f = 1 MHz | 1290 | 1680 | pF | ||
Coss | Output Capacitance | 257 | 330 | pF | |||
Crss | Reverse Transfer Capacitance | 5.7 | 7.4 | pF | |||
RG | Series Gate Resistance | 1.1 | 2.2 | Ω | |||
Qg | Gate Charge Total (10 V) | VDS = 50 V, ID = 10 A | 17 | 22 | nC | ||
Qgd | Gate Charge Gate to Drain | 3.2 | nC | ||||
Qgs | Gate Charge Gate to Source | 5.1 | nC | ||||
Qg(th) | Gate Charge at Vth | 3.3 | nC | ||||
Qoss | Output Charge | VDS = 50 V, VGS = 0 V | 44 | nC | |||
td(on) | Turn On Delay Time | VDS = 50 V, VGS = 10 V, IDS = 10 A, RG = 0 Ω |
9 | ns | |||
tr | Rise Time | 14 | ns | ||||
td(off) | Turn Off Delay Time | 20 | ns | ||||
tf | Fall Time | 6 | ns | ||||
DIODE CHARACTERISTICS | |||||||
VSD | Diode Forward Voltage | ISD = 10 A, VGS = 0 V | 0.8 | 1.0 | V | ||
Qrr | Reverse Recovery Charge | VDS= 50 V, IF = 10 A, di/dt = 300 A/μs |
134 | nC | |||
trr | Reverse Recovery Time | 53 | ns |
PARAMETER | MIN | TYP | MAX | UNIT | |
---|---|---|---|---|---|
RθJC | Junction-to-Case Thermal Resistance (1) | 2.0 | °C/W | ||
RθJA | Junction-to-Ambient Thermal Resistance(1)(2) | 50 |
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Max RθJA = 50°C/W when mounted on 1 inch2 (6.45 cm2) of 2-oz. (0.071-mm thick) Cu. |
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Max RθJA = 115°C/W when mounted on a minimum pad area of 2-oz. (0.071-mm thick) Cu. |
ID = 10 A | VDS = 50 V | |
ID = 250 µA | ||
ID = 10 A | ||
Single Pulse | Max RθJC = 2.0°C/W | |
VDS = 5 V | ||