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This 100-V, 2.8 mΩ, D2PAK (TO-263) NexFET™ power MOSFET is designed to minimize losses in power conversion applications.
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TA = 25°C | TYPICAL VALUE | UNIT | ||
---|---|---|---|---|
VDS | Drain-to-Source Voltage | 100 | V | |
Qg | Gate Charge Total (10 V) | 75 | nC | |
Qgd | Gate Charge Gate-to-Drain | 11 | nC | |
RDS(on) | Drain-to-Source On Resistance | VGS = 6 V | 3.2 | mΩ |
VGS = 10 V | 2.8 | |||
VGS(th) | Threshold Voltage | 2.7 | V |
DEVICE | QTY | MEDIA | PACKAGE | SHIP |
---|---|---|---|---|
CSD19535KTT | 500 | 13-Inch Reel | D2PAK Plastic Package | Tape and Reel |
CSD19535KTTT | 50 |
TA = 25°C | VALUE | UNIT | |
---|---|---|---|
VDS | Drain-to-Source Voltage | 100 | V |
VGS | Gate-to-Source Voltage | ±20 | V |
ID | Continuous Drain Current (Package Limited) | 200 | A |
Continuous Drain Current (Silicon Limited), TC = 25°C |
197 | ||
Continuous Drain Current (Silicon Limited), TC = 100°C |
139 | ||
IDM | Pulsed Drain Current(1) | 400 | A |
PD | Power Dissipation, TC = 25°C | 300 | W |
TJ, Tstg |
Operating Junction, Storage Temperature |
–55 to 175 | °C |
EAS | Avalanche Energy, Single Pulse ID = 95 A, L = 0.1 mH |
451 | mJ |
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RDS(on) vs VGS![]() |
Gate Charge![]() |
Changes from A Revision (May 2015) to B Revision
Changes from * Revision (March 2015) to A Revision
PARAMETER | TEST CONDITIONS | MIN | TYP | MAX | UNIT | ||
---|---|---|---|---|---|---|---|
STATIC CHARACTERISTICS | |||||||
BVDSS | Drain-to-source voltage | VGS = 0 V, ID = 250 μA | 100 | V | |||
IDSS | Drain-to-source leakage current | VGS = 0 V, VDS = 80 V | 1 | μA | |||
IGSS | Gate-to-source leakage current | VDS = 0 V, VGS = 20 V | 100 | nA | |||
VGS(th) | Gate-to-source threshold voltage | VDS = VGS, ID = 250 μA | 2.2 | 2.7 | 3.4 | V | |
RDS(on) | Drain-to-source on resistance | VGS = 6 V, ID = 100 A | 3.2 | 4.1 | mΩ | ||
VGS = 10 V, ID = 100 A | 2.8 | 3.4 | |||||
gfs | Transconductance | VDS = 10 V, ID = 100 A | 301 | S | |||
DYNAMIC CHARACTERISTICS | |||||||
Ciss | Input capacitance | VGS = 0 V, VDS = 50 V, ƒ = 1 MHz | 6100 | 7930 | pF | ||
Coss | Output capacitance | 1160 | 1510 | pF | |||
Crss | Reverse transfer capacitance | 29 | 38 | pF | |||
RG | Series gate resistance | 1.4 | 2.8 | Ω | |||
Qg | Gate charge total (10 V) | VDS = 50 V, ID = 100 A | 75 | 98 | nC | ||
Qgd | Gate charge gate-to-drain | 11 | nC | ||||
Qgs | Gate charge gate-to-source | 25 | nC | ||||
Qg(th) | Gate charge at Vth | 16 | nC | ||||
Qoss | Output charge | VDS = 50 V, VGS = 0 V | 210 | nC | |||
td(on) | Turnon delay time | VDS = 50 V, VGS = 10 V, IDS = 100 A, RG = 0 Ω |
9 | ns | |||
tr | Rise time | 18 | ns | ||||
td(off) | Turnoff delay time | 21 | ns | ||||
tf | Fall time | 15 | ns | ||||
DIODE CHARACTERISTICS | |||||||
VSD | Diode forward voltage | ISD = 100 A, VGS = 0 V | 0.9 | 1.1 | V | ||
Qrr | Reverse recovery charge | VDS= 50 V, IF = 100 A, di/dt = 300 A/μs |
435 | nC | |||
trr | Reverse recovery time | 85 | ns |
THERMAL METRIC | MIN | TYP | MAX | UNIT | |
---|---|---|---|---|---|
RθJC | Junction-to-case thermal resistance | 0.5 | °C/W | ||
RθJA | Junction-to-ambient thermal resistance | 62 | °C/W |
VDS = 5 V |
VDS = 50 V | ID = 100 A |
ID = 250 µA |
ID = 100 A |
Single pulse, max RθJC = 0.5°C/W |
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These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam during storage or handling to prevent electrostatic damage to the MOS gates.
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