SLPS539B March 2015 – January 2017 CSD19535KTT
PRODUCTION DATA.
- 1Features
- 2Applications
- 3Description
- 4Revision History
- 5Specifications
- 6Device and Documentation Support
- 7Mechanical, Packaging, and Orderable Information
パッケージ・オプション
デバイスごとのパッケージ図は、PDF版データシートをご参照ください。
メカニカル・データ（パッケージ｜ピン）
- KTT|2
サーマルパッド・メカニカル・データ
発注情報
1 Features
- Ultra-Low Qg and Qgd
- Low-Thermal Resistance
- Avalanche Rated
- Lead-Free Terminal Plating
- RoHS Compliant
- Halogen Free
- D2PAK Plastic Package
2 Applications
- Hot Swap
- Motor Control
- Secondary Side Synchronous Rectifier
3 Description
This 100-V, 2.8 mΩ, D2PAK (TO-263) NexFET™ power MOSFET is designed to minimize losses in power conversion applications.
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Pin Out
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Product Summary
| TA = 25°C | TYPICAL VALUE | UNIT | ||
|---|---|---|---|---|
| VDS | Drain-to-Source Voltage | 100 | V | |
| Qg | Gate Charge Total (10 V) | 75 | nC | |
| Qgd | Gate Charge Gate-to-Drain | 11 | nC | |
| RDS(on) | Drain-to-Source On Resistance | VGS = 6 V | 3.2 | mΩ |
| VGS = 10 V | 2.8 | |||
| VGS(th) | Threshold Voltage | 2.7 | V | |
Device Information(1)
| DEVICE | QTY | MEDIA | PACKAGE | SHIP |
|---|---|---|---|---|
| CSD19535KTT | 500 | 13-Inch Reel | D2PAK Plastic Package | Tape and Reel |
| CSD19535KTTT | 50 |
- For all available packages, see the orderable addendum at the end of the data sheet.
Absolute Maximum Ratings
| TA = 25°C | VALUE | UNIT | |
|---|---|---|---|
| VDS | Drain-to-Source Voltage | 100 | V |
| VGS | Gate-to-Source Voltage | ±20 | V |
| ID | Continuous Drain Current (Package Limited) | 200 | A |
| Continuous Drain Current (Silicon Limited), TC = 25°C |
197 | ||
| Continuous Drain Current (Silicon Limited), TC = 100°C |
139 | ||
| IDM | Pulsed Drain Current(1) | 400 | A |
| PD | Power Dissipation, TC = 25°C | 300 | W |
| TJ, Tstg |
Operating Junction, Storage Temperature |
–55 to 175 | °C |
| EAS | Avalanche Energy, Single Pulse ID = 95 A, L = 0.1 mH |
451 | mJ |
- Max RθJC = 0.5°C/W, pulse duration ≤ 100 µs, duty cycle ≤ 1%.
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RDS(on) vs VGS |
Gate Charge |