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The device is designed to deliver the lowest on resistance and gate charge in the smallest outline possible with excellent thermal characteristics in an ultra-low profile. Low on resistance coupled with the small footprint and low profile make the device ideal for battery operated space constrained applications.
Device | Qty | Media | Package | Ship |
---|---|---|---|---|
CSD22202W15 | 3000 | 7-Inch Reel | 1.5 mm × 1.5 mm Wafer BGA Package | Tape and Reel |
CSD22202W15T | 250 | 7-Inch Reel |
TA = 25°C unless otherwise stated | VALUE | UNIT | |
---|---|---|---|
VDS | Drain-to-Source Voltage | –8 | V |
VGS | Gate-to-Source Voltage | –6 | V |
ID | Continuous Drain Current(1)
(Silicon Limitted) |
–10 | A |
Pulsed Drain Current(2) | –48 | ||
IG | Continuous Gate Current(3) | –0.5 | A |
PD | Power Dissipation(1) | 1.5 | W |
TJ, Tstg |
Operating Junction and Storage Temperature Range |
–55 to 150 | °C |
RDS(on) vs VGS![]() |
Gate Charge![]() |
Changes from A Revision (July 2014) to B Revision
Changes from * Revision (June 2013) to A Revision