SLPS506 August 2014 CSD23202W10
PRODUCTION DATA.
デバイスごとのパッケージ図は、PDF版データシートをご参照ください。
This 12 V, 44 mΩ device is designed to deliver the lowest on-resistance and gate charge in a small
1 mm × 1 mm outline with excellent thermal characteristics in an ultra-low profile.
TA = 25°C | TYPICAL VALUE | UNIT | ||
---|---|---|---|---|
VDS | Drain-to-Source Voltage | –12 | V | |
Qg | Gate Charge Total (–4.5 V) | 2.9 | nC | |
Qgd | Gate Charge Gate-to-Drain | 0.28 | nC | |
RDS(on) | Drain-to-Source On-Resistance | VGS = –1.5 V | 82 | mΩ |
VGS = –1.8 V | 67 | mΩ | ||
VGS = –2.5 V | 54 | mΩ | ||
VGS = –4.5 V | 44 | mΩ | ||
VGS(th) | Threshold Voltage | –0.60 | V |
Device | Qty | Media | Package | Ship |
---|---|---|---|---|
CSD23202W10 | 3000 | 7-Inch Reel | 1 × 1-mm Wafer Level Package | Tape and Reel |
CSD23202W10T | 250 | 7-Inch Reel |
TA = 25°C | VALUE | UNIT | |
---|---|---|---|
VDS | Drain-to-Source Voltage | –12 | V |
VGS | Gate-to-Source Voltage | –6 | V |
ID | Continuous Drain Current(1) | –2.2 | A |
IDM | Pulsed Drain Current(2) | –25 | A |
IG | Continuous Gate Clamp Current | –0.5 | A |
Pulsed Gate Clamp Current | –7 | A | |
PD | Power Dissipation(1) | 1 | W |
TJ, Tstg |
Operating Junction and Storage Temperature Range |
–55 to 150 | °C |
RDS(on) vs VGS |
Gate Charge |