SLPS506 August   2014 CSD23202W10

PRODUCTION DATA.  

  1. 1Features
  2. 2Applications
  3. 3Description
  4. 4Revision History
  5. 5Specifications
    1. 5.1 Electrical Characteristics
    2. 5.2 Thermal Information
    3. 5.3 Typical MOSFET Characteristics
  6. 6Device and Documentation Support
    1. 6.1 Trademarks
    2. 6.2 Electrostatic Discharge Caution
    3. 6.3 Glossary
  7. 7Mechanical, Packaging, and Orderable Information
    1. 7.1 CSD23202W10 Package Dimensions
    2. 7.2 Land Pattern Recommendation
    3. 7.3 Tape and Reel Information

パッケージ・オプション

デバイスごとのパッケージ図は、PDF版データシートをご参照ください。

メカニカル・データ(パッケージ|ピン)
  • YZB|4
サーマルパッド・メカニカル・データ
発注情報

1 Features

  • Ultra-Low Qg and Qgd
  • Small Footprint 1 mm × 1 mm
  • Low Profile 0.62-mm Height
  • Pb Free
  • Gate ESD Protection – 3 kV
  • RoHS Compliant
  • Halogen Free

2 Applications

  • Battery Management
  • Load Switch
  • Battery Protection

3 Description

This 12 V, 44 mΩ device is designed to deliver the lowest on-resistance and gate charge in a small
1 mm × 1 mm outline with excellent thermal characteristics in an ultra-low profile.

Top View

P0097-01_LPS209.gif

Product Summary

TA = 25°C TYPICAL VALUE UNIT
VDS Drain-to-Source Voltage –12 V
Qg Gate Charge Total (–4.5 V) 2.9 nC
Qgd Gate Charge Gate-to-Drain 0.28 nC
RDS(on) Drain-to-Source On-Resistance VGS = –1.5 V 82
VGS = –1.8 V 67
VGS = –2.5 V 54
VGS = –4.5 V 44
VGS(th) Threshold Voltage –0.60 V

Ordering Information(1)

Device Qty Media Package Ship
CSD23202W10 3000 7-Inch Reel 1 × 1-mm Wafer Level Package Tape and Reel
CSD23202W10T 250 7-Inch Reel
  1. For all available packages, see the orderable addendum at the end of the data sheet.

Absolute Maximum Ratings

TA = 25°C VALUE UNIT
VDS Drain-to-Source Voltage –12 V
VGS Gate-to-Source Voltage –6 V
ID Continuous Drain Current(1) –2.2 A
IDM Pulsed Drain Current(2) –25 A
IG Continuous Gate Clamp Current –0.5 A
Pulsed Gate Clamp Current –7 A
PD Power Dissipation(1) 1 W
TJ,
Tstg
Operating Junction and
Storage Temperature Range
–55 to 150 °C
  1. Device operating at a temperature of 105°C
  2. Typ RθJA = 195°C/W, Pulse width ≤100 μs, duty cycle ≤1%

RDS(on) vs VGS

graph07_SLPS533.png

Gate Charge

graph04p2_frontpage_SLPS533.png