SLPS506 August   2014 CSD23202W10

PRODUCTION DATA.  

  1. 1Features
  2. 2Applications
  3. 3Description
  4. 4Revision History
  5. 5Specifications
    1. 5.1 Electrical Characteristics
    2. 5.2 Thermal Information
    3. 5.3 Typical MOSFET Characteristics
  6. 6Device and Documentation Support
    1. 6.1 Trademarks
    2. 6.2 Electrostatic Discharge Caution
    3. 6.3 Glossary
  7. 7Mechanical, Packaging, and Orderable Information
    1. 7.1 CSD23202W10 Package Dimensions
    2. 7.2 Land Pattern Recommendation
    3. 7.3 Tape and Reel Information

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5 Specifications

5.1 Electrical Characteristics

(TA = 25°C unless otherwise stated)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
STATIC CHARACTERISTICS
BVDSS Drain-to-Source Voltage VGS = 0 V, ID = –250 μA –12 V
BVGSS Gate-to-Source Voltage; VDS = 0 V, IG = –250 μA –6 –7.2 V
IDSS Drain-to-Source Leakage Current VGS = 0 V, VDS = –9.6 V –1 μA
IGSS Gate-to-Source Leakage Current VDS = 0 V, VGS = –6 V –100 nA
VGS(th) Gate-to-Source Threshold Voltage VDS = VGS, ID = –250 μA –0.4 –0.6 –0.9 V
RDS(on) Drain-to-Source On-Resistance VGS = –1.5 V, ID = –0.5 A 82 123 mΩ
VGS = –1.8 V, ID = –0.5 A 67 92 mΩ
VGS = –2.5 V, ID = –0.5 A 54 66 mΩ
VGS = –4.5 V, ID = –0.5 A 44 53 mΩ
gƒs Transconductance VDS = –1.2 V, ID = –0.5 A 5.6 S
DYNAMIC CHARACTERISTICS
CISS Input Capacitance VGS = 0 V, VDS = –6.0 V, ƒ = 1 MHz 394 512 pF
COSS Output Capacitance 238 310 pF
CRSS Reverse Transfer Capacitance 29 37 pF
Qg Gate Charge Total (–4.5 V) VDS = –6 V, ID = –0.5 A 2.9 3.8 nC
Qgd Gate Charge Gate-to-Drain 0.28 nC
Qgs Gate Charge Gate-to-Source 0.55 nC
Qg(th) Gate Charge at Vth 0.29 nC
QOSS Output Charge VDS = –6 V, VGS = 0 V 2.0 nC
td(on) Turn On Delay Time VDS = –6 V, VGS = –4.5 V,
ID = –0.5 A RG = 0 Ω		 9 ns
tr Rise Time 4 ns
td(off) Turn Off Delay Time 58 ns
tƒ Fall Time 21 ns
DIODE CHARACTERISTICS
VSD Diode Forward Voltage IS = –0.5 A, VGS = 0 V –0.66 –1 V
Qrr Reverse Recovery Charge VDS= –6 V, IF = –0.5 A, di/dt = 100 A/μs 3.7 nC
trr Reverse Recovery Time 12 ns

5.2 Thermal Information

(TA = 25°C unless otherwise stated)
THERMAL METRIC MIN TYP MAX UNIT
RθJA Junction-to-Ambient Thermal Resistance(1) 195 °C/W
Junction-to-Ambient Thermal Resistance(2) 65
(1) Device mounted on FR4 material with minimum Cu mounting area.
(2) Device mounted on FR4 material with 1-inch2 (6.45-cm2), 2-oz. (0.071-mm thick) Cu.
M0149-01_LPS209.gif
 Typical RθJA = 65°C/W when mounted on
1 inch2 of 2 oz. Cu.
M0150-01_LPS209.gif
 Typical RθJA = 195°C/W when mounted on minimum pad area of 2 oz. Cu.

5.3 Typical MOSFET Characteristics

(TA = 25°C unless otherwise stated)
graph01_SLPS533.png
Figure 1. Transient Thermal Impedance
graph02_SLPS533.png
Figure 2. Saturation Characteristics
graph04p2_SLPS533.png
ID = –0.5 A VDS = –6 V
Figure 4. Gate Charge
graph06_SLPS533.png
ID = –250 µA
Figure 6. Threshold Voltage vs Temperature
graph08_SLPS533.png
ID = –0.5 A
Figure 8. Normalized On-State Resistance vs Temperature
graph10_SLPS533.png
Single Pulse, Max RθJA = 195°C/W
Figure 10. Maximum Safe Operating Area
graph03_SLPS533.png
VDS = –5 V
Figure 3. Transfer Characteristics
graph05_SLPS533.png
Figure 5. Capacitance
graph07_SLPS533.png
Figure 7. On-State Drain-to-Source Resistance vs
Gate-to-Source Voltage
graph09_SLPS533.png
Figure 9. Typical Diode Forward Voltage
graph12_SLPS533.png
Figure 11. Maximum Drain Current vs Temperature