JAJSMW0G October   2013  – January 2022 CSD23381F4

PRODUCTION DATA  

  1. 1特長
  2. 2アプリケーション
  3. 3概要
  4. 4Revision History
  5. 5Specifications
    1. 5.1 Electrical Characteristics
    2. 5.2 Thermal Information
    3. 5.3 Typical MOSFET Characteristics
  6. 6Device and Documentation Support
    1. 6.1 Trademarks
    2. 6.2 Electrostatic Discharge Caution
    3. 6.3 Glossary
  7. 7Mechanical, Packaging, and Orderable Information
    1. 7.1 Mechanical Dimensions
    2. 7.2 Recommended Minimum PCB Layout
    3. 7.3 Recommended Stencil Pattern
    4. 7.4 CSD23381F4 Embossed Carrier Tape Dimensions

パッケージ・オプション

デバイスごとのパッケージ図は、PDF版データシートをご参照ください。

メカニカル・データ（パッケージ｜ピン）
  • YJC|3
サーマルパッド・メカニカル・データ
発注情報

5.1 Electrical Characteristics

(TA = 25°C unless otherwise stated)
PARAMETERTEST CONDITIONSMINTYPMAXUNIT
STATIC CHARACTERISTICS
BVDSSDrain-to-Source VoltageVGS = 0 V, IDS = –250 μA–12V
IDSSDrain-to-Source Leakage CurrentVGS = 0 V, VDS = –9.6 V–100nA
IGSSGate-to-Source Leakage CurrentVDS = 0 V, VGS = –8 V–50nA
VGS(th)Gate-to-Source Threshold VoltageVDS = VGS, IDS = –250 μA–0.7–0.95–1.20V
RDS(on)Drain-to-Source On-ResistanceVGS = –1.8 V, IDS = –0.1 A480970mΩ
VGS = –2.5 V, IDS = –0.5 A250300mΩ
VGS = –4.5 V, IDS = –0.5 A150175mΩ
gfsTransconductanceVDS = –6 V, IDS = –0.5 A2S
DYNAMIC CHARACTERISTICS
CissInput CapacitanceVGS = 0 V, VDS = –6 V,
ƒ = 1 MHz		236pF
CossOutput Capacitance98pF
CrssReverse Transfer Capacitance6.9pF
RGSeries Gate Resistance20Ω
QgGate Charge Total (4.5 V)VDS = –6 V, IDS = –0.5 A1140pC
QgdGate Charge Gate-to-Drain190pC
QgsGate Charge Gate-to-Source300pC
Qg(th)Gate Charge at Vth145pC
QossOutput ChargeVDS = –6 V, VGS = 0 V1290pC
td(on)Turn On Delay TimeVDS = –6 V, VGS = –4.5 V,
IDS = –0.5 A, RG = 2 Ω		4.5ns
trRise Time3.9ns
td(off)Turn Off Delay Time18ns
tfFall Time7ns
DIODE CHARACTERISTICS
VSDDiode Forward VoltageISD = –0.5 A, VGS = 0 V–0.75V
QrrReverse Recovery ChargeVDS= –10 V, IF = –0.5 A, di/dt = 100 A/μs1260pC
trrReverse Recovery Time7.9ns