JAJSMW1E May   2014  – January 2022 CSD23382F4

PRODUCTION DATA  

  1. 1特長
  2. 2アプリケーション
  3. 3概要
  4. 4Revision History
  5. 5Specifications
    1. 5.1 Electrical Characteristics
    2. 5.2 Thermal Information
    3. 5.3 Typical MOSFET Characteristics
  6. 6Device and Documentation Support
    1. 6.1 Trademarks
    2. 6.2 Electrostatic Discharge Caution
    3. 6.3 Glossary
  7. 7Mechanical, Packaging, and Orderable Information
    1. 7.1 Mechanical Dimensions
    2. 7.2 Recommended Minimum PCB Layout
    3. 7.3 Recommended Stencil Pattern
    4. 7.4 CSD23382F4 Embossed Carrier Tape Dimensions

パッケージ・オプション

デバイスごとのパッケージ図は、PDF版データシートをご参照ください。

メカニカル・データ（パッケージ｜ピン）
  • YJC|3
サーマルパッド・メカニカル・データ
発注情報

5.3 Typical MOSFET Characteristics

(TA = 25°C unless otherwise stated)

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Figure 5-1 Transient Thermal Impedance
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Figure 5-2 Saturation Characteristics
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VDS = –5 V
Figure 5-3 Transfer Characteristics
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ID = –0.5 AVDS = 6 V
Figure 5-4 Gate Charge
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ID = –250 µA
Figure 5-6 Threshold Voltage vs Temperature
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VGS = –4.5 VID = –0.5 A
Figure 5-8 Normalized On-State Resistance vs Temperature
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Single PulseTyp RθJA = 245°C/W
Figure 5-10 Maximum Safe Operating Area
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Figure 5-5 Capacitance
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Figure 5-7 On-State Resistance vs Gate-to-Source Voltage
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Figure 5-9 Typical Diode Forward Voltage
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Figure 5-11 Maximum Drain Current vs Temperature