SLPS510A July 2014 – August 2014 CSD25304W1015
PRODUCTION DATA.
デバイスごとのパッケージ図は、PDF版データシートをご参照ください。
This 27 mΩ, –20 V, P-Channel device is designed to deliver the lowest on-resistance and gate charge in a small 1.0 × 1.5 mm outline with excellent thermal characteristics in an ultra-low profile.
TA = 25°C | TYPICAL VALUE | UNIT | ||
---|---|---|---|---|
VDS | Drain-to-Source Voltage | –20 | V | |
Qg | Gate Charge Total (4.5 V) | 3.3 | nC | |
Qgd | Gate Charge Gate-to-Drain | 0.5 | nC | |
RDS(on) | Drain-to-Source On-Resistance | VGS = –1.8 V | 65 | mΩ |
VGS = –2.5 V | 36 | mΩ | ||
VGS = –4.5 V | 27 | mΩ | ||
VGS(th) | Voltage Threshold | –0.8 | V |
Device | Qty | Media | Package | Ship |
---|---|---|---|---|
CSD25304W1015 | 3000 | 7-Inch Reel | 1.0 mm × 1.5 mm Wafer Level Package | Tape and Reel |
CSD25304W1015T | 250 | 7-Inch Reel |
TA = 25°C | VALUE | UNIT | |
---|---|---|---|
VDS | Drain-to-Source Voltage | –20 | V |
VGS | Gate-to-Source Voltage | ±8 | V |
ID | Continuous Drain Current(1) | –3.0 | A |
IDM | Pulsed Drain Current(2) | –41 | A |
PD | Power Dissipation | 0.75 | W |
TJ,
Tstg |
Operating Junction and Storage Temperature Range |
–55 to 150 | °C |
RDS(on) vs VGS |
Gate Charge |