JAJSMV8F October   2013  – January 2022 CSD25483F4

PRODUCTION DATA  

  1. 1特長
  2. 2アプリケーション
  3. 3概要
  4. 4Revision History
  5. 5Specifications
    1. 5.1 Electrical Characteristics
    2. 5.2 Thermal Information
    3. 5.3 Typical MOSFET Characteristics
  6. 6Device and Documentation Support
    1. 6.1 Trademarks
    2. 6.2 Electrostatic Discharge Caution
    3. 6.3 Glossary
  7. 7Mechanical Data
    1. 7.1 Mechanical Dimensions
    2. 7.2 Recommended Minimum PCB Layout
    3. 7.3 Recommended Stencil Pattern
    4. 7.4 CSD25483F4 Embossed Carrier Tape Dimensions

パッケージ・オプション

デバイスごとのパッケージ図は、PDF版データシートをご参照ください。

メカニカル・データ（パッケージ｜ピン）
  • YJC|3
サーマルパッド・メカニカル・データ
発注情報

5.1 Electrical Characteristics

(TA = 25°C unless otherwise stated)
PARAMETERTEST CONDITIONSMINTYPMAXUNIT
STATIC CHARACTERISTICS
BVDSSDrain-to-Source VoltageVGS = 0 V, IDS = –250 μA–20V
IDSSDrain-to-Source Leakage CurrentVGS = 0 V, VDS = –16 V–100nA
IGSSGate-to-Source Leakage CurrentVDS = 0 V, VGS = –12 V–50nA
VGS(th)Gate-to-Source Threshold VoltageVDS = VGS, IDS = –250 μA–0.70–0.95–1.2V
RDS(on)Drain-to-Source On-ResistanceVGS = –1.8 V, IDS = –0.1 A5301070mΩ
VGS = –2.5 V, IDS = –0.5 A338390mΩ
VGS = –4.5 V, IDS = –0.5 A210245mΩ
VGS = –8 V, IDS = –0.5 A175205mΩ
gfsTransconductanceVDS = –10 V, IDS = –0.5 A1.4S
DYNAMIC CHARACTERISTICS
CissInput CapacitanceVGS = 0 V, VDS = –10 V,
ƒ = 1 MHz		198pF
CossOutput Capacitance82pF
CrssReverse Transfer Capacitance5.8pF
RGSeries Gate Resistance20Ω
QgGate Charge Total (4.5 V)VDS = –10 V, IDS = –0.5 A959pC
QgdGate Charge Gate-to-Drain160pC
QgsGate Charge Gate-to-Source252pC
Qg(th)Gate Charge at Vth122pC
QossOutput ChargeVDS = –10 V, VGS = 0 V1081pC
td(on)Turn On Delay TimeVDS = –10 V, VGS = –4.5 V,
IDS = –0.5 A,RG = 2 Ω		4.3ns
trRise Time3.7ns
td(off)Turn Off Delay Time17.4ns
tfFall Time7ns
DIODE CHARACTERISTICS
VSDDiode Forward VoltageISD = –0.5 A, VGS = 0 V–0.75V
QrrReverse Recovery ChargeVDS= –10 V, IF = –0.5 A, di/dt = 100 A/μs1060pC
trrReverse Recovery Time7.5ns