JAJSDH6B May 2015 – February 2022 CSD25484F4
PRODUCTION DATA
| PARAMETER | TEST CONDITIONS | MIN | TYP | MAX | UNIT | ||
|---|---|---|---|---|---|---|---|
| STATIC CHARACTERISTICS | |||||||
| BVDSS | Drain-to-source voltage | VGS = 0 V, IDS = –250 μA | –20 | V | |||
| IDSS | Drain-to-source leakage current | VGS = 0 V, VDS = –16 V | –100 | nA | |||
| IGSS | Gate-to-source leakage current | VDS = 0 V, VGS = –12 V | –50 | nA | |||
| VGS(th) | Gate-to-source threshold voltage | VDS = VGS, IDS = –250 μA | –0.7 | –0.95 | –1.2 | V | |
| RDS(on) | Drain-to-source on-resistance | VGS = –1.8 V, IDS = –0.1 A | 405 | 825 | mΩ | ||
| VGS = –2.5 V, IDS = –0.5 A | 150 | 180 | |||||
| VGS = –4.5 V, IDS = –0.5 A | 93 | 109 | |||||
| VGS = –8 V, IDS = –0.5 A | 80 | 94 | |||||
| gfs | Transconductance | VDS = –10 V, IDS = –0.5 A | 3.5 | S | |||
| DYNAMIC CHARACTERISTICS | |||||||
| Ciss | Input capacitance | VGS = 0 V, VDS = –10 V, ƒ = 1 MHz | 175 | 230 | pF | ||
| Coss | Output capacitance | 78 | 102 | pF | |||
| Crss | Reverse transfer capacitance | 5.5 | 7.2 | pF | |||
| RG | Series gate resistance | 20 | Ω | ||||
| Qg | Gate charge total (–4.5 V) | VDS = –10 V, IDS = –0.5 A | 1090 | 1415 | pC | ||
| Qgd | Gate charge gate-to-drain | 150 | pC | ||||
| Qgs | Gate charge gate-to-source | 350 | pC | ||||
| Qg(th) | Gate charge at Vth | 210 | pC | ||||
| Qoss | Output charge | VDS = –10 V, VGS = 0 V | 1290 | pC | |||
| td(on) | Turnon delay time | VDS = –10 V, VGS = –4.5 V, IDS = –0.5 A, RG = 10 Ω | 9.5 | ns | |||
| tr | Rise time | 5 | ns | ||||
| td(off) | Turnoff delay time | 18 | ns | ||||
| tf | Fall Time | 8.5 | ns | ||||
| DIODE CHARACTERISTICS | |||||||
| VSD | Diode forward voltage | ISD = –0.5 A, VGS = 0 V | –0.75 | V | |||
| Qrr | Reverse recovery charge | VDS= –10 V, IF = –0.5 A, di/dt = 100 A/μs | 970 | pC | |||
| trr | Reverse recovery time | 7.5 | ns | ||||