JAJSF40 March   2018 CSD86356Q5D

PRODUCTION DATA.  

  1. 1特長
  2. 2アプリケーション
  3. 3概要
    1.     上面図
      1.      Device Images
  4. 4改訂履歴
  5. 5Specifications
    1. 5.1 Absolute Maximum Ratings
    2. 5.2 Recommended Operating Conditions
    3. 5.3 Thermal Information
    4. 5.4 Power Block Performance
    5. 5.5 Electrical Characteristics – Q1 Control FET
    6. 5.6 Electrical Characteristics – Q2 Sync FET
    7. 5.7 Typical Power Block Device Characteristics
    8. 5.8 Typical Power Block MOSFET Characteristics
  6. 6Application and Implementation
    1. 6.1 Application Information
      1. 6.1.1 Equivalent System Performance
        1. 6.1.1.1 Comparison of RDS(ON) vs ZDS(ON)
      2. 6.1.2 Power Loss Curves
      3. 6.1.3 Safe Operating Area (SOA) Curves
      4. 6.1.4 Normalized Curves
    2. 6.2 Typical Application
      1. 6.2.1 Design Example: Calculating Power Loss and SOA
      2. 6.2.2 Operating Conditions
        1. 6.2.2.1 Calculating Power Loss
        2. 6.2.2.2 Calculating SOA Adjustments
  7. 7Layout
    1. 7.1 Recommended Schematic Overview
    2. 7.2 Recommended PCB Design Overview
      1. 7.2.1 Electrical Performance
      2. 7.2.2 Thermal Performance
  8. 8デバイスおよびドキュメントのサポート
    1. 8.1 ドキュメントの更新通知を受け取る方法
    2. 8.2 コミュニティ・リソース
    3. 8.3 商標
    4. 8.4 静電気放電に関する注意事項
    5. 8.5 Glossary
  9. 9メカニカル、パッケージ、および注文情報
    1. 9.1 Q5Dパッケージの寸法
    2. 9.2 ピン構成
    3. 9.3 推奨ランド・パターン
    4. 9.4 推奨ステンシル

パッケージ・オプション

メカニカル・データ（パッケージ｜ピン）
サーマルパッド・メカニカル・データ
発注情報

5.6 Electrical Characteristics – Q2 Sync FET

Tj = 25°C (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
STATIC CHARACTERISTICS
BVDSS Drain-to-source voltage VGS = 0 V, IDS = 250 µA 25 V
IDSS Drain-to-source leakage current VGS = 0 V, VDS = 20 V 1 µA
IGSS Gate-to-source leakage current VDS = 0 V, VGS = +10 / –8 V 100 nA
VGS(th) Gate-to-source threshold voltage VDS = VGS, IDS = 250 µA 0.9 1.5 V
ZDS(on) Effective AC on-impedance VIN = 12 V, VGS = 5 V, VOUT = 1.3 V,
IOUT = 20 A, ƒSW = 500 kHz,
LOUT = 300 nH		 0.8 mΩ
gfs Transconductance VDS = 2.5 V, IDS = 20 A 106 S
DYNAMIC CHARACTERISTICS
CISS Input capacitance VGS = 0 V, VDS = 12.5 V, ƒ = 1 Mhz 1930 2510 pF
COSS Output capacitance 1350 1760 pF
CRSS Reverse transfer capacitance 64 83 pF
RG Series gate resistance 0.8 1.6 Ω
Qg Gate charge total (4.5 V) VDS = 12.5 V, IDS = 20 A 14.8 19.3 nC
Qgd Gate charge – gate-to-drain 3.3 nC
Qgs Gate charge – gate-to-source 5.2 nC
Qg(th) Gate charge at Vth 2.5 nC
QOSS Output charge VDS = 12.5 V, VGS = 0 V 24.9 nC
td(on) Turn on delay time VDS = 12.5 V, VGS = 4.5 V, IDS = 20 A,
RG = 0 Ω		 10 ns
tr Rise time 25 ns
td(off) Turn off delay time 18 ns
tf Fall time 4 ns
DIODE CHARACTERISTICS
VSD Diode forward voltage IDS = 20 A, VGS = 0 V 0.79 0.95 V
Qrr Reverse recovery charge VDS = 12.5 V, IF = 20 A, di/dt = 300 A/µs 60 nC
trr Reverse recovery time 30 ns

CSD86356Q5D M0189-01_LPS293.gif
Max RθJA = 50°C/W when mounted on 1-in2 (6.45-cm2) of
2-oz (0.071-mm) thick Cu.
CSD86356Q5D M0190-01_LPS293.gif
Max RθJA = 125°C/W when mounted on minimum pad area of
2-oz (0.071-mm) thick Cu.