SLPS284D August 2011 – December 2016 CSD87330Q3D
PRODUCTION DATA.
デバイスごとのパッケージ図は、PDF版データシートをご参照ください。
MIN | MAX | UNIT | ||
---|---|---|---|---|
Voltage | 30 | V | ||
VSW to PGND | 30 | |||
VSW to PGND (10 ns) | 32 | |||
TG to TGR | –8 | 10 | ||
BG to PGND | –8 | 10 | ||
Pulsed current rating, IDM(2) | 60 | A | ||
Power dissipation, PD | 6 | W | ||
Avalanche energy, EAS | Sync FET, ID = 56 A, L = 0.1 mH | 157 | mJ | |
Control FET, ID = 36 A, L = 0.1 mH | 65 | |||
Operating junction, TJ | –55 | 150 | °C | |
Storage temperature, TSTG | –55 | 150 | °C |
MIN | MAX | UNIT | |||
---|---|---|---|---|---|
VGS | Gate drive voltage | 4.5 | 8 | V | |
VIN | Input supply voltage | 27 | V | ||
fSW | Switching frequency | CBST = 0.1 μF (min) | 1500 | kHz | |
Operating current | 20 | A | |||
TJ | Operating temperature | 125 | °C |
THERMAL METRIC | MIN | TYP | MAX | UNIT | |
---|---|---|---|---|---|
RθJA | Junction-to-ambient thermal resistance (min Cu)(2) | 135 | °C/W | ||
Junction-to-ambient thermal resistance (max Cu)(2)(1) | 73 | ||||
RθJC | Junction-to-case thermal resistance (top of package)(2) | 29 | °C/W | ||
Junction-to-case thermal resistance (PGND pin)(2) | 2.5 |
PARAMETER | CONDITIONS | MIN | TYP | MAX | UNIT | |
---|---|---|---|---|---|---|
PLOSS | Power loss(1) | VIN = 12 V, VGS = 5 V, VOUT = 1.3 V, IOUT = 15 A, ƒSW = 500 kHz, LOUT = 1 µH, TJ = 25°C |
2 | W | ||
IQVIN | VIN quiescent current | TG to TGR = 0 V BG to PGND = 0 V |
10 | µA |
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Max RθJA = 73°C/W when mounted on 1 in2 (6.45 cm2) of 2-oz (0.071-mm) thick Cu. |
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Max RθJA = 135°C/W when mounted on minimum pad area of 2-oz (0.071-mm) thick Cu. |