SLPS426A December 2012 – February 2017 CSD87351ZQ5D
PRODUCTION DATA.
PARAMETER | CONDITIONS | MIN | MAX | UNIT | |
---|---|---|---|---|---|
Voltage | VIN to PGND | –0.8 | 30 | V | |
TG to TGR | –0.8 | 10 | |||
BG to PGND | –8 | 10 | |||
IDM | Pulsed current rating(2) | 96 | A | ||
PD | Power dissipation | 12 | W | ||
EAS | Avalanche energy | Sync FET, ID = 87 A, L = 0.1 mH | 378 | mJ | |
Control FET, ID = 44 A, L = 0.1 mH | 87 | ||||
TJ | Operating junction | –55 | 150 | °C | |
TSTG | Storage temperature | –55 | 150 | °C |
PARAMETER | CONDITIONS | MIN | MAX | UNIT | |
---|---|---|---|---|---|
VGS | Gate drive voltage | 4.5 | 8 | V | |
VIN | Input supply voltage | 27 | V | ||
ƒSW | Switching frequency | CBST = 0.1 μF (min) | 200 | 1500 | kHz |
Operating current | 32 | A | |||
TJ | Operating temperature | 125 | °C |
PARAMETER | CONDITIONS | MIN | TYP | MAX | UNIT | |
---|---|---|---|---|---|---|
PLOSS | Power loss(1) | VIN = 12 V, VGS = 5 V, VOUT = 1.3 V, IOUT = 20 A, ƒSW = 500 kHz, LOUT = 0.3 µH, TJ = 25°C |
2.5 | W | ||
IQVIN | VIN quiescent current | TG to TGR = 0 V BG to PGND = 0 V |
10 | µA |
THERMAL METRIC | MIN | TYP | MAX | UNIT | |
---|---|---|---|---|---|
RθJA | Junction-to-ambient thermal resistance (min Cu)(1)(2) | 119 | °C/W | ||
Junction-to-ambient thermal resistance (max Cu)(1)(2) | 62 | ||||
RθJC | Junction-to-case thermal resistance (top of package)(2) | 25 | °C/W | ||
Junction-to-case thermal resistance (PGND pin)(2) | 2.3 |
PARAMETER | TEST CONDITIONS | Q1 Control FET | Q2 Sync FET | |||||||
---|---|---|---|---|---|---|---|---|---|---|
MIN | TYP | MAX | MIN | TYP | MAX | UNIT | ||||
STATIC CHARACTERISTICS | ||||||||||
BVDSS | Drain-to-source voltage | VGS = 0 V, IDS = 250 μA | 30 | 30 | V | |||||
IDSS | Drain-to-source leakage current | VGS = 0 V, VDS = 24 V | 1 | 1 | μA | |||||
IGSS | Gate-to-source leakage current | VDS = 0 V, VGS = +10 / –8 | 100 | 100 | nA | |||||
VGS(th) | Gate-to-source threshold voltage | VDS = VGS, IDS = 250 μA | 1.0 | 2.1 | 0.75 | 1.15 | V | |||
ZDS(on)(1) | Effective AC on-impedance | VIN = 12 V, VGS = 5 V, VOUT = 1.3 V, IOUT = 20 A, ƒSW = 500 kHz, LOUT = 0.3 µH, |
7.4 | 1.6 | mΩ | |||||
gfs | Transconductance | VDS = 15 V, IDS = 20 A | 75 | 142 | S | |||||
DYNAMIC CHARACTERISTICS | ||||||||||
CISS | Input capacitance | VGS = 0 V, VDS = 15 V, ƒ = 1 MHz |
966 | 1255 | 2410 | 3133 | pF | |||
COSS | Output capacitance | 382 | 497 | 1130 | 1469 | pF | ||||
CRSS | Reverse transfer capacitance | 19 | 25 | 45 | 59 | pF | ||||
RG | Series gate resistance | 0.9 | 1.8 | 1 | 2 | Ω | ||||
Qg | Gate charge total (4.5 V) | VDS = 15 V, IDS = 20 A |
5.9 | 7.7 | 17 | 22 | nC | |||
Qgd | Gate charge gate-to-drain | 1.1 | 3.1 | nC | ||||||
Qgs | Gate charge gate-to-source | 2.1 | 3.7 | nC | ||||||
Qg(th) | Gate charge at Vth | 1.1 | 2 | nC | ||||||
QOSS | Output charge | VDS = 9.8 V, VGS = 0 V | 6.5 | 23 | nC | |||||
td(on) | Turnon delay time | VDS = 15 V, VGS = 4.5 V, IDS = 20 A, RG = 2 Ω |
6.1 | 7.7 | ns | |||||
tr | Rise time | 16 | 10 | ns | ||||||
td(off) | Turnoff delay time | 10 | 31 | ns | ||||||
tf | Fall time | 2.1 | 4.2 | ns | ||||||
DIODE CHARACTERISTICS | ||||||||||
VSD | Diode forward voltage | IDS = 20 A, VGS = 0 V | 0.86 | 1 | 0.78 | 1 | V | |||
Qrr | Reverse recovery charge | Vdd = 9.8 V, IF = 20 A, di/dt = 300 A/μs |
8.6 | 23 | nC | |||||
trr | Reverse recovery time | 16 | 24 | ns |
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Max RθJA = 62°C/W when mounted on 1 in2 (6.45 cm2) of 2-oz (0.071-mm) thick Cu. |
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Max RθJA = 119°C/W when mounted on minimum pad area of 2-oz (0.071-mm) thick Cu. |