SLPS560 December 2015 CSD87502Q2
PRODUCTION DATA.
- 1Features
- 2Applications
- 3Description
- 4Revision History
- 5Specifications
- 6Device and Documentation Support
- 7Mechanical, Packaging, and Orderable Information
パッケージ・オプション
デバイスごとのパッケージ図は、PDF版データシートをご参照ください。
メカニカル・データ（パッケージ｜ピン）
- DLV|6
サーマルパッド・メカニカル・データ
発注情報
1 Features
- Low On-Resistance
- Dual Independent MOSFETs
- Space Saving SON 2 × 2 mm Plastic Package
- Optimized for 5 V Gate Driver
- Avalanche Rated
- Pb and Halogen Free
- RoHS Compliant
2 Applications
- Point-of-Load Synchronous Buck Converter for Applications in Networking, Telecom, and Computing Systems
- Adaptor or USB Input Protection for Notebook PCs and Tablets
- Battery Protection
3 Description
The CSD87502Q2 is a 30 V, 27 mΩ N-Channel device with dual independent MOSFETs in a SON 2 x 2 mm plastic package. The two FETs were designed to be used in a half-bridge configuration for synchronous buck and other power supply applications. Additionally, these NexFET™ power MOSFETs can be used for adaptor, USB input protection, and battery charging applications. The dual FETs feature low drain-to-source on-resistance that minimizes losses and offers low component count for space-constrained applications.
Top View and Circuit Image
Product Summary
| TA = 25°C | TYPICAL VALUE | UNIT | ||
|---|---|---|---|---|
| VDS | Drain-to-Source Voltage | 30 | V | |
| Qg | Gate Charge Total (4.5 V) | 2.2 | nC | |
| Qgd | Gate Charge Gate to Drain | 0.5 | nC | |
| RDS(on) | Drain-to-Source On Resistance | VGS = 3.8 V | 42.0 | mΩ |
| VGS = 4.5 V | 35.5 | mΩ | ||
| VGS = 10 V | 27.0 | mΩ | ||
| VGS(th) | Threshold Voltage | 1.6 | V | |
.
Ordering Information(1)
| DEVICE | MEDIA | QTY | PACKAGE | SHIP |
|---|---|---|---|---|
| CSD87502Q2 | 7-Inch Reel | 3000 | SON 2 x 2 mm Plastic Package |
Tape and Reel |
| CSD87502Q2T | 7-Inch Reel | 250 |
- For all available packages, see the orderable addendum at the end of the data sheet.
Absolute Maximum Ratings
| TA = 25°C | VALUE | UNIT | |
|---|---|---|---|
| VDS | Drain-to-Source Voltage | 30 | V |
| VGS | Gate-to-Source Voltage | ±20 | V |
| ID | Continuous Drain Current (Package limited) | 5.0 | A |
| IDM | Pulsed Drain Current(1) | 23 | A |
| PD | Power Dissipation(2) | 2.3 | W |
| TJ, Tstg |
Operating Junction Temperature, Storage Temperature |
–55 to 150 | °C |
| EAS | Avalanche Energy, single pulse ID = 7.9 A, L = 0.1 mH, RG = 25 Ω |
3.1 | mJ |
- Max RθJA = 185 °C/W, pulse duration ≤100 μs, duty cycle ≤1%.
- Typical RθJA = 55 °C/W on a 1 inch2, 2 oz. Cu pad on a 0.06 inch thick FR4 PCB.
RDS(on) vs VGS |
Gate Charge |