SLPS455A January 2014 – August 2014 CSD88537ND
PRODUCTION DATA.
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PARAMETER | TEST CONDITIONS | MIN | TYP | MAX | UNIT | ||
---|---|---|---|---|---|---|---|
STATIC CHARACTERISTICS | |||||||
BVDSS | Drain-to-Source Voltage | VGS = 0 V, ID = 250 μA | 60 | V | |||
IDSS | Drain-to-Source Leakage Current | VGS = 0 V, VDS = 48 V | 1 | μA | |||
IGSS | Gate-to-Source Leakage Current | VDS = 0 V, VGS = 20 V | 100 | nA | |||
VGS(th) | Gate-to-Source Threshold Voltage | VDS = VGS, ID = 250 μA | 2.6 | 3 | 3.6 | V | |
RDS(on) | Drain-to-Source On-Resistance | VGS = 6 V, ID = 8 A | 15 | 19 | mΩ | ||
VGS = 10 V, ID = 8 A | 12.5 | 15 | mΩ | ||||
gƒs | Transconductance | VDS = 30 V, ID = 8 A | 42 | S | |||
DYNAMIC CHARACTERISTICS | |||||||
Ciss | Input Capacitance | VGS = 0 V, VDS = 30 V, ƒ = 1 MHz | 1080 | 1400 | pF | ||
Coss | Output Capacitance | 133 | 173 | pF | |||
Crss | Reverse Transfer Capacitance | 4 | 5.2 | pF | |||
RG | Series Gate Resistance | 5.5 | 11 | Ω | |||
Qg | Gate Charge Total (10 V) | VDS = 30 V, ID = 8 A | 14 | 18 | nC | ||
Qgd | Gate Charge Gate-to-Drain | 2.3 | nC | ||||
Qgs | Gate Charge Gate-to-Source | 4.6 | nC | ||||
Qg(th) | Gate Charge at Vth | 3.4 | nC | ||||
Qoss | Output Charge | VDS = 30 V, VGS = 0 V | 25 | nC | |||
td(on) | Turn On Delay Time | VDS = 30 V, VGS = 10 V, IDS = 8 A, RG = 0 Ω | 6 | ns | |||
tr | Rise Time | 15 | ns | ||||
td(off) | Turn Off Delay Time | 5 | ns | ||||
tƒ | Fall Time | 19 | ns | ||||
DIODE CHARACTERISTICS | |||||||
VSD | Diode Forward Voltage | ISD = 8 A, VGS = 0 V | 0.8 | 1 | V | ||
Qrr | Reverse Recovery Charge | VDS= 30 V, IF = 8 A, di/dt = 300 A/μs | 50 | nC | |||
trr | Reverse Recovery Time | 30 | ns |
THERMAL METRIC | MIN | TYP | MAX | UNIT | |
---|---|---|---|---|---|
RθJL | Junction-to-Lead Thermal Resistance(1) | 20 | °C/W | ||
RθJA | Junction-to-Ambient Thermal Resistance(1)(2) | 75 |
VDS = 5 V | ||
ID = 8 A | VDS = 30 V | |
ID = 250 µA | ||
ID = 8 A | ||
Single Pulse | Max RθJL = 20°C/W | |