JAJSSG2A February   2014  – December 2023 CSD88539ND

PRODUCTION DATA  

  1.   1
  2. 1特長
  3. 2アプリケーション
  4. 3概要
  5. 4Specifications
    1. 4.1 Electrical Characteristics
    2. 4.2 Thermal Information
    3. 4.3 Typical MOSFET Characteristics
  6. 5Device and Documentation Support
    1. 5.1 Trademarks
    2. 5.2 静電気放電に関する注意事項
  7. 6Revision History
  8. 7Mechanical Data

パッケージ・オプション

デバイスごとのパッケージ図は、PDF版データシートをご参照ください。

メカニカル・データ(パッケージ|ピン)
  • D|8
サーマルパッド・メカニカル・データ
発注情報

Electrical Characteristics

(TA = 25°C unless otherwise stated)
PARAMETERTEST CONDITIONSMINTYPMAXUNIT
STATIC CHARACTERISTICS
BVDSSDrain-to-Source VoltageVGS = 0 V, ID = 250 μA60V
IDSSDrain-to-Source Leakage CurrentVGS = 0 V, VDS = 48 V1μA
IGSSGate-to-Source Leakage CurrentVDS = 0 V, VGS = 20 V100nA
VGS(th)Gate-to-Source Threshold VoltageVDS = VGS, ID = 250 μA2.63.03.6V
RDS(on)Drain-to-Source On ResistanceVGS = 6 V, ID = 5 A2734mΩ
VGS = 10 V, ID = 5 A2328mΩ
gfsTransconductanceVDS = 30 V, ID = 5 A19S
DYNAMIC CHARACTERISTICS
CissInput CapacitanceVGS = 0 V, VDS = 30 V, ƒ = 1 MHz570741pF
CossOutput Capacitance7091pF
CrssReverse Transfer Capacitance2.02.6pF
RGSeries Gate Resistance6.613.2
QgGate Charge Total (10 V)VDS = 30 V, ID = 5 A7.29.4nC
QgdGate Charge Gate to Drain1.1nC
QgsGate Charge Gate to Source2.7nC
Qg(th)Gate Charge at Vth1.8nC
QossOutput ChargeVDS = 30 V, VGS = 0 V9.6nC
td(on)Turn On Delay TimeVDS = 30 V, VGS = 10 V, IDS = 5 A, RG = 0 Ω5ns
trRise Time9ns
td(off)Turn Off Delay Time14ns
tfFall Time4ns
DIODE CHARACTERISTICS
VSDDiode Forward VoltageISD = 5 A, VGS = 0 V0.81V
QrrReverse Recovery ChargeVDS= 30 V, IF = 5A, di/dt = 300A/μs37nC
trrReverse Recovery Time21ns