JAJSD34C April 2017 – April 2018 CSD88599Q5DC
PRODUCTION DATA.
デバイスごとのパッケージ図は、PDF版データシートをご参照ください。
PARAMETER | TEST CONDITIONS | MIN | TYP | MAX | UNIT | ||
---|---|---|---|---|---|---|---|
STATIC CHARACTERISTICS | |||||||
BVDSS | Drain-to-source voltage | VGS = 0 V, IDS = 250 µA | 60 | V | |||
IDSS | Drain-to-source leakage current | VGS = 0 V, VDS = 48 V | 1 | µA | |||
IGSS | Gate-to-source leakage current | VDS = 0 V, VGS = 20 V | 100 | nA | |||
VGS(th) | Gate-to-source threshold voltage | VDS = VGS, IDS = 250 µA | 1.4 | 2.0 | 2.5 | V | |
RDS(on) | Drain-to-source on-resistance | VGS = 4.5 V, IDS = 30 A | 2.5 | 3.3 | mΩ | ||
VGS = 10 V, IDS = 30 A | 1.7 | 2.1 | |||||
gfs | Transconductance | VDS = 6 V, IDS = 30 A | 130 | S | |||
DYNAMIC CHARACTERISTICS | |||||||
CISS | Input capacitance | VGS = 0V, VDS = 30 V,
ƒ = 1 MHz |
3720 | 4840 | pF | ||
COSS | Output capacitance | 670 | 870 | pF | |||
CRSS | Reverse transfer capacitance | 12 | 16 | pF | |||
RG | Series gate resistance | 0.9 | 1.8 | Ω | |||
Qg | Gate charge total (4.5 V) | VDS = 30 V,
IDS = 30 A |
21 | 27 | nC | ||
Qg | Gate charge total (10 V) | 43 | 56 | nC | |||
Qgd | Gate charge gate-to-drain | 7.0 | nC | ||||
Qgs | Gate charge gate-to-source | 10.1 | nC | ||||
Qg(th) | Gate charge at Vth | 6.3 | nC | ||||
QOSS | Output charge | VDS = 30 V, VGS = 0 V | 100 | nC | |||
td(on) | Turnon delay time | VDS = 30 V, VGS = 10 V,
IDS = 30 A, RG = 0 Ω |
9 | ns | |||
tr | Rise time | 20 | ns | ||||
td(off) | Turnoff delay time | 23 | ns | ||||
tf | Fall time | 3 | ns | ||||
DIODE CHARACTERISTICS | |||||||
VSD | Diode forward voltage | IDS = 30 A, VGS = 0 V | 0.8 | 1.0 | V | ||
Qrr | Reverse recovery charge | VDS = 30 V, IF = 30 A,
di/dt = 300 A/µs |
172 | nC | |||
trr | Reverse recovery time | 36 | ns |
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Max RθJA = 50°C/W when mounted on 1 in2 (6.45 cm2) of 2-oz (0.071-mm) thick Cu. |
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Max RθJA = 125°C/W when mounted on minimum pad area of 2-oz (0.071-mm) thick Cu. |