SLPS416C June   2014  – March 2015 CSD95372AQ5M

PRODUCTION DATA.  

  1. 1 Features
  2. 2 Applications
  3. 3 Description
  4. 4 Revision History
  5. 5 Pin Configuration and Functions
  6. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics
    6. 6.6 Typical Power Stage Characteristics
  7. 7 Detailed Description
    1. 7.1 Functional Block Diagram
    2. 7.2 Functional Description
      1. 7.2.1 Powering the CSD95372AQ5M and Gate Drivers
      2. 7.2.2 Undervoltage Lockout (UVLO) Protection
      3. 7.2.3 ENABLE
      4. 7.2.4 Power Up Sequencing
      5. 7.2.5 PWM
      6. 7.2.6 FCCM
      7. 7.2.7 TAO/FAULT (Thermal Analog Output/Protection Flag)
      8. 7.2.8 Over Temperature
      9. 7.2.9 Gate Drivers
  8. 8 Application and Implementation
    1. 8.1 Application Information
    2. 8.2 Power Loss Curves
    3. 8.3 Safe Operating Curves (SOA)
    4. 8.4 Normalized Curves
    5. 8.5 Calculating Power Loss and SOA
      1. 8.5.1 Design Example
      2. 8.5.2 Calculating Power Loss
      3. 8.5.3 Calculating SOA Adjustments
  9. 9 Layout
    1. 9.1 Layout Guidelines
      1. 9.1.1 Recommended Schematic Overview
      2. 9.1.2 Recommended PCB Design Overview
        1. 9.1.2.1 Electrical Performance
        2. 9.1.2.2 Thermal Performance
      3. 9.1.3 Sensing Performance
    2. 9.2 Layout Example
  10. 10Application Schematic
  11. 11Device and Documentation Support
    1. 11.1 Trademarks
    2. 11.2 Electrostatic Discharge Caution
    3. 11.3 Glossary
  12. 12Mechanical, Packaging, and Orderable Information
    1. 12.1 Mechanical Drawing
    2. 12.2 Recommended PCB Land Pattern
    3. 12.3 Recommended Stencil Opening

パッケージ・オプション

デバイスごとのパッケージ図は、PDF版データシートをご参照ください。

メカニカル・データ（パッケージ｜ピン）
  • DQP|12
サーマルパッド・メカニカル・データ
発注情報

11 Device and Documentation Support

11.1 Trademarks

NexFET is a trademark of Texas Instruments.

All other trademarks are the property of their respective owners.

11.2 Electrostatic Discharge Caution

esds-image

These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam during storage or handling to prevent electrostatic damage to the MOS gates.

11.3 Glossary

SLYZ022 — TI Glossary.

This glossary lists and explains terms, acronyms, and definitions.