SNAS410F May   2008  – July 2016 DAC121S101QML-SP

PRODUCTION DATA.  

  1. 1 Features
  2. 2 Applications
  3. 3 Description
  4. 4 Revision History
  5. 5 Pin Configuration and Functions
  6. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 DAC121S101QML-SP Electrical Characteristics DC Parameters
    6. 6.6 DAC121S101QML-SP Electrical Characteristics AC and Timing Characteristics
    7. 6.7 DAC121S101QML Electrical Characteristics Radiation Electrical Characteristics
    8. 6.8 DAC121S101QML-SP Electrical Characteristics Operating Life Test Delta Parameters TA at 25°C
    9. 6.9 Typical Characteristics
  7. 7 Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1 DAC Section
      2. 7.3.2 Resistor String
      3. 7.3.3 Output Amplifier
      4. 7.3.4 Power-On Reset
    4. 7.4 Device Functional Modes
      1. 7.4.1 Power-Down Modes
    5. 7.5 Programming
      1. 7.5.1 Serial Interface
      2. 7.5.2 Input Shift Register
  8. 8 Application and Implementation
    1. 8.1 Application Information
      1. 8.1.1 Bipolar Operation
      2. 8.1.2 DSP and Microprocessor Interfacing
        1. 8.1.2.1 ADSP-2101/ADSP2103 Interfacing
        2. 8.1.2.2 80C51/80L51 Interface
        3. 8.1.2.3 68HC11 Interface
        4. 8.1.2.4 Microwire Interface
      3. 8.1.3 Radiation Environments
        1. 8.1.3.1 Total Ionizing Dose
          1. 8.1.3.1.1 DAC121S101WGRQV 5962R0722601VZA
          2. 8.1.3.1.2 DAC121S101WGRLV 5962R0722602VZA
        2. 8.1.3.2 Single Event Latch-Up and Functional Interrupt
        3. 8.1.3.3 Single Event Upset
    2. 8.2 Typical Application
      1. 8.2.1 Design Requirements
      2. 8.2.2 Detailed Design Procedure
      3. 8.2.3 Application Curve
  9. 9 Power Supply Recommendations
    1. 9.1 Using References as Power Supplies
      1. 9.1.1 LM4050QML-SP
      2. 9.1.2 LP3985
      3. 9.1.3 LP2980-N
  10. 10Layout
    1. 10.1 Layout Guidelines
    2. 10.2 Layout Example
  11. 11Device and Documentation Support
    1. 11.1 Device Support
      1. 11.1.1 Development Support
      2. 11.1.2 Device Nomenclature
        1. 11.1.2.1 Specification Definitions
    2. 11.2 Documentation Support
      1. 11.2.1 Related Documentation
    3. 11.3 Receiving Notification of Documentation Updates
    4. 11.4 Community Resources
    5. 11.5 Trademarks
    6. 11.6 Electrostatic Discharge Caution
    7. 11.7 Glossary
  12. 12Mechanical, Packaging, and Orderable Information
    1. 12.1 Engineering Samples

パッケージ・オプション

メカニカル・データ（パッケージ｜ピン）
サーマルパッド・メカニカル・データ
発注情報

11 Device and Documentation Support

11.1 Device Support

11.1.1 Development Support

For development support, see the following:

11.1.2 Device Nomenclature

11.1.2.1 Specification Definitions

DIFFERENTIAL NON-LINEARITY (DNL) is the measure of the maximum deviation from the ideal step size of 1 LSB, which is VREF / 4096 = VA / 4096.

DIGITAL FEEDTHROUGH is a measure of the energy injected into the analog output of the DAC from the digital inputs when the DAC outputs are not updated. It is measured with a full-scale code change on the data bus.

FULL-SCALE ERROR is the difference between the actual output voltage with a full scale code (FFFh) loaded into the DAC and the value of VA x 4095 / 4096.

GAIN ERROR is the deviation from the ideal slope of the transfer function. It can be calculated from Zero and Full-Scale Errors as GE = FSE - ZE, where GE is Gain error, FSE is Full-Scale Error and ZE is Zero Error.

GLITCH IMPULSE is the energy injected into the analog output when the input code to the DAC register changes. It is specified as the area of the glitch in nanovolt-seconds.

INTEGRAL NON-LINEARITY (INL) is a measure of the deviation of each individual code from a straight line through the input to output transfer function. The deviation of any given code from this straight line is measured from the center of that code value. The end point method is used. INL for this product is specified over a limited range, per the Electrical Tables.

LEAST SIGNIFICANT BIT (LSB) is the bit that has the smallest value or weight of all bits in a word. This value is

Equation 8. LSB = VREF / 2n

where VREF is the supply voltage for this product, and n is the DAC resolution in bits, which is 12 for the DAC121S101QML-SP.

MAXIMUM LOAD CAPACITANCE is the maximum capacitance that can be driven by the DAC with output stability maintained.

MONOTONICITY is the condition of being monotonic, where the DAC has an output that never decreases when the input code increases.

MOST SIGNIFICANT BIT (MSB) is the bit that has the largest value or weight of all bits in a word. Its value is 1/2 of VA.

POWER EFFICIENCY is the ratio of the output current to the total supply current. The output current comes from the power supply. The difference between the supply and output currents is the power consumed by the device without a load.

SETTLING TIME is the time for the output to settle to within 1/2 LSB of the final value after the input code is updated.

WAKE-UP TIME is the time for the output to exit power-down mode. This is the time measured from the falling edge of 16th SCLK pulse to when the output voltage deviates from the power-down voltage of 0 V.

ZERO CODE ERROR is the output error, or voltage, present at the DAC output after a code of 000h has been entered.

 

11.2 Documentation Support

11.2.1 Related Documentation

For related documentation see the following:

LP2980-N Micropower 50-mA Ultra Low-Dropout Regulator in SOT-23 Package, SNOS733

11.3 Receiving Notification of Documentation Updates

To receive notification of documentation updates, navigate to the device product folder on ti.com. In the upper right corner, click on Alert me to register and receive a weekly digest of any product information that has changed. For change details, review the revision history included in any revised document.

11.4 Community Resources

The following links connect to TI community resources. Linked contents are provided "AS IS" by the respective contributors. They do not constitute TI specifications and do not necessarily reflect TI's views; see TI's Terms of Use.

    TI E2E™ Online Community TI's Engineer-to-Engineer (E2E) Community. Created to foster collaboration among engineers. At e2e.ti.com, you can ask questions, share knowledge, explore ideas and help solve problems with fellow engineers.
    Design Support TI's Design Support Quickly find helpful E2E forums along with design support tools and contact information for technical support.

11.5 Trademarks

E2E is a trademark of Texas Instruments.

All other trademarks are the property of their respective owners.

11.6 Electrostatic Discharge Caution

esds-image

This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled with appropriate precautions. Failure to observe proper handling and installation procedures can cause damage.

ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may be more susceptible to damage because very small parametric changes could cause the device not to meet its published specifications.

11.7 Glossary

SLYZ022 — TI Glossary.

This glossary lists and explains terms, acronyms, and definitions.