SLAS749E March   2011  – November 2015 DAC3484

PRODUCTION DATA.  

  1. 1 Features
  2. 2 Applications
  3. 3 Description
  4. 4 Revision History
  5. 5 Pin Configuration and Functions
  6. 6 Specifications
    1. 6.1  Absolute Maximum Ratings
    2. 6.2  ESD Ratings
    3. 6.3  Recommended Operating Conditions
    4. 6.4  Thermal InformationZAY package information to Thermal InformationTJ row from top of thermal table
    5. 6.5  Electrical Characteristics - DC Specifications
    6. 6.6  Electrical Characteristics - Digital Specifications
    7. 6.7  Electrical Characteristics - AC Specifications
    8. 6.8  Timing Requirements - Digital Specifications
    9. 6.9  Switching Characteristics - AC Specifications
    10. 6.10 Typical Characteristics
  7. 7 Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1  Serial Interface
      2. 7.3.2  Data Interface
        1. 7.3.2.1 Word-Wide Format
        2. 7.3.2.2 Byte-Wide Format
      3. 7.3.3  Input FIFO
      4. 7.3.4  FIFO Modes of Operation
        1. 7.3.4.1 Dual Sync Sources Mode
        2. 7.3.4.2 Single Sync Source Mode
        3. 7.3.4.3 Bypass Mode
      5. 7.3.5  Clocking Modes
        1. 7.3.5.1 PLL Bypass Mode
        2. 7.3.5.2 PLL Mode
      6. 7.3.6  FIR Filters
      7. 7.3.7  Complex Signal Mixer
        1. 7.3.7.1 Full Complex Mixer
        2. 7.3.7.2 Coarse Complex Mixer
        3. 7.3.7.3 Mixer Gain
        4. 7.3.7.4 Real Channel Upconversion
      8. 7.3.8  Quadrature Modulation Correction (QMC)
        1. 7.3.8.1 Gain and Phase Correction
        2. 7.3.8.2 Offset Correction
        3. 7.3.8.3 Group Delay Correction
      9. 7.3.9  Temperature Sensor
      10. 7.3.10 Data Pattern Checker
      11. 7.3.11 Parity Check Test
        1. 7.3.11.1 Word-by-Word Parity
        2. 7.3.11.2 Block Parity
      12. 7.3.12 DAC3484 Alarm Monitoring
      13. 7.3.13 LVPECL Inputs
      14. 7.3.14 LVDS Inputs
      15. 7.3.15 Unused LVDS Port Termination
      16. 7.3.16 CMOS Digital Inputs
      17. 7.3.17 Reference Operation
      18. 7.3.18 DAC Transfer Function
      19. 7.3.19 Analog Current Outputs
    4. 7.4 Device Functional Modes
      1. 7.4.1 Multi-Device Synchronization
        1. 7.4.1.1 Multi-Device Synchronization: PLL Bypassed with Dual Sync Sources Mode
        2. 7.4.1.2 Multi-Device Synchronization: PLL Enabled with Dual Sync Sources Mode
        3. 7.4.1.3 Multi-Device Operation: Single Sync Source Mode
    5. 7.5 Programming
      1. 7.5.1 Power-Up Sequence
      2. 7.5.2 Example Start-Up Routine
        1. 7.5.2.1 Device Configuration
        2. 7.5.2.2 PLL Configuration
        3. 7.5.2.3 NCO Configuration
        4. 7.5.2.4 Example Start-Up Sequence
    6. 7.6 Register Map
      1. 7.6.1 Register Descriptions
  8. 8 Application and Implementation
    1. 8.1 Application Information
    2. 8.2 Typical Applications
      1. 8.2.1 IF Based LTE Transmitter
        1. 8.2.1.1 Design Requirements
        2. 8.2.1.2 Detailed Design Procedure
          1. 8.2.1.2.1 Data Input Rate
          2. 8.2.1.2.2 Interpolation
          3. 8.2.1.2.3 LO Feedthrough and Sideband Correction
        3. 8.2.1.3 Application Curves
      2. 8.2.2 Direct Upconversion (Zero IF) LTE Transmitter
        1. 8.2.2.1 Design Requirements
        2. 8.2.2.2 Detailed Design Procedure
          1. 8.2.2.2.1 Data Input Rate
          2. 8.2.2.2.2 Interpolation
          3. 8.2.2.2.3 LO Feedthrough and Sideband Correction
        3. 8.2.2.3 Application Curves
  9. 9 Power Supply Recommendations
  10. 10Layout
    1. 10.1 Layout Guidelines
      1. 10.1.1 Assembly
    2. 10.2 Layout Examples
  11. 11Device and Documentation Support
    1. 11.1 Device Support
      1. 11.1.1 Third-Party Products Disclaimer
      2. 11.1.2 Device Nomenclature
        1. 11.1.2.1 Definition of Specifications
    2. 11.2 Documentation Support
      1. 11.2.1 Related Documentation
    3. 11.3 Community Resources
    4. 11.4 Trademarks
    5. 11.5 Electrostatic Discharge Caution
    6. 11.6 Glossary
  12. 12Mechanical, Packaging, and Orderable Information

パッケージ・オプション

メカニカル・データ（パッケージ｜ピン）
サーマルパッド・メカニカル・データ
発注情報

11 Device and Documentation Support

11.1 Device Support

11.1.1 Third-Party Products Disclaimer

TI'S PUBLICATION OF INFORMATION REGARDING THIRD-PARTY PRODUCTS OR SERVICES DOES NOT CONSTITUTE AN ENDORSEMENT REGARDING THE SUITABILITY OF SUCH PRODUCTS OR SERVICES OR A WARRANTY, REPRESENTATION OR ENDORSEMENT OF SUCH PRODUCTS OR SERVICES, EITHER ALONE OR IN COMBINATION WITH ANY TI PRODUCT OR SERVICE.

11.1.2 Device Nomenclature

11.1.2.1 Definition of Specifications

Adjacent Carrier Leakage Ratio (ACLR): Defined for a 3.84Mcps 3GPP W-CDMA input signal measured in a 3.84-MHz bandwidth at a 5-MHz offset from the carrier with a 12dB peak-to-average ratio.

Analog and Digital Power Supply Rejection Ratio (APSSR, DPSSR): Defined as the percentage error in the ratio of the delta IOUT and delta supply voltage normalized with respect to the ideal IOUT current.

Differential Nonlinearity (DNL): Defined as the variation in analog output associated with an ideal 1 LSB change in the digital input code.

Gain Drift: Defined as the maximum change in gain, in terms of ppm of full-scale range (FSR) per °C, from the value at ambient (25°C) to values over the full operating temperature range.

Gain Error: Defined as the percentage error (in FSR%) for the ratio between the measured full-scale output current and the ideal full-scale output current.

Integral Nonlinearity (INL): Defined as the maximum deviation of the actual analog output from the ideal output, determined by a straight line drawn from zero scale to full scale.

Intermodulation Distortion (IMD3): The two-tone IMD3 is defined as the ratio (in dBc) of the 3rd-order intermodulation distortion product to either fundamental output tone.

Offset Drift: Defined as the maximum change in DC offset, in terms of ppm of full-scale range (FSR) per °C, from the value at ambient (25°C) to values over the full operating temperature range.

Offset Error: Defined as the percentage error (in FSR%) for the ratio between the measured mid-scale output current and the ideal mid-scale output current.

Output Compliance Range: Defined as the minimum and maximum allowable voltage at the output of the current-output DAC. Exceeding this limit may result reduced reliability of the device or adversely affecting distortion performance.

Reference Voltage Drift: Defined as the maximum change of the reference voltage in ppm per degree Celsius from value at ambient (25°C) to values over the full operating temperature range.

Spurious Free Dynamic Range (SFDR): Defined as the difference (in dBc) between the peak amplitude of the output signal and the peak spurious signal within the first Nyquist zone.

Noise Spectral Density (NSD): Defined as the difference of power (in dBc) between the output tone signal power and the noise floor of 1-Hz bandwidth within the first Nyquist zone.

11.2 Documentation Support

11.2.1 Related Documentation

  • Design Summary Multi-row Quad Flat No-lead (MRQFN) Application Report (SZZA059)
  • nFBGA Packaging Application Report (SPRAA99)
  • DAC348x Device Configuration and Synchronization Application Report (SLAA584)
  • Semiconductor and IC Package Thermal Metrics Application Report (SPRA953)
  • Using DAC348x with Fault Detection and Auto Output Shut-off Feature Application Report (SLAA585)

11.3 Community Resources

The following links connect to TI community resources. Linked contents are provided "AS IS" by the respective contributors. They do not constitute TI specifications and do not necessarily reflect TI's views; see TI's Terms of Use.

    TI E2E™ Online Community TI's Engineer-to-Engineer (E2E) Community. Created to foster collaboration among engineers. At e2e.ti.com, you can ask questions, share knowledge, explore ideas and help solve problems with fellow engineers.
    Design Support TI's Design Support Quickly find helpful E2E forums along with design support tools and contact information for technical support.

11.4 Trademarks

E2E is a trademark of Texas Instruments.

All other trademarks are the property of their respective owners.

11.5 Electrostatic Discharge Caution

esds-image

These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam during storage or handling to prevent electrostatic damage to the MOS gates.

11.6 Glossary

SLYZ022 — TI Glossary.

This glossary lists and explains terms, acronyms, and definitions.