SGLS386F January   2009  – October 2014 DAC5670-SP

PRODUCTION DATA.  

  1. Features
  2. Applications
  3. Description
  4. Revision History
  5. Description (continued)
  6. Pin Configuration and Functions
  7. Specifications
    1. 7.1 Absolute Maximum Ratings
    2. 7.2 Handling Ratings
    3. 7.3 Recommended Operating Conditions
    4. 7.4 Thermal Information
    5. 7.5 DC Electrical Characteristics
    6. 7.6 AC Electrical Characteristics
    7. 7.7 Digital Electrical Characteristics
    8. 7.8 Timing Requirements
    9. 7.9 Typical Characteristics
  8. Detailed Description
    1. 8.1 Overview
    2. 8.2 Functional Block Diagram
    3. 8.3 Feature Description
      1. 8.3.1 Digital Inputs
      2. 8.3.2 DLL Usage
      3. 8.3.3 Clock Input
      4. 8.3.4 DAC Transfer Function
      5. 8.3.5 Reference Operation
      6. 8.3.6 Analog Current Outputs
      7. 8.3.7 Sleep Mode
    4. 8.4 Device Functional Modes
      1. 8.4.1 Input Format
  9. Application and Implementation
    1. 9.1 Application Information
    2. 9.2 Typical Application
      1. 9.2.1 Design Requirements
      2. 9.2.2 Detailed Design Procedure
      3. 9.2.3 Application Curves
  10. 10Power Supply Recommendations
  11. 11Layout
    1. 11.1 Layout Guidelines
    2. 11.2 Layout Example
  12. 12Device and Documentation Support
    1. 12.1 Device Support
      1. 12.1.1 Device Nomenclature
        1. 12.1.1.1 Definitions of Specifications and Terminology
    2. 12.2 Trademarks
    3. 12.3 Electrostatic Discharge Caution
    4. 12.4 Glossary
  13. 13Mechanical, Packaging, and Orderable Information

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  • GEM|192
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発注情報

7 Specifications

7.1 Absolute Maximum Ratings(1)

over operating free-air temperature range (unless otherwise noted)
MIN MAX UNIT
Supply voltage AVDD to GND 5 V
DA_P[13..0], DA_N[13..0], DB_P[13..0], DB_N[13..0] Measured with respect to GND –0.3 AVDD + 0.3 V
NORMAL, A_ONLY, A_ONLY_INV, A_ONLY_ZS Measured with respect to GND –0.3 AVDD + 0.3 V
DTCLK_P, DTCLK_N, DACCLK_P, DACCLK_N Measured with respect to GND –0.3 AVDD + 0.3 V
LVDS_HTB, INV_CLK, RESTART Measured with respect to GND –0.3 AVDD + 0.3 V
IOUT_P, IOUT_N Measured with respect to GND AVDD – 0.5 AVDD + 1.5 V
CSCAP_IN, REFIO_IN, RBIAS_IN Measured with respect to GND –0.3 AVDD + 0.3 V
Peak input current (any input) 20 mA
Maximum junction temperature 150 °C
Lead temperature 1.6 mm (1/16 inch) from the case for 10 s 260 °C
(1) Stresses above those listed under Absolute Maximum Ratings may cause permanent damage to the device. Exposure to absolute maximum conditions for extended periods may degrade device reliability. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Conditions is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.

7.2 Handling Ratings

MIN MAX UNIT
Tstg Storage temperature range –65 150 °C
V(ESD) Electrostatic discharge Human body model (HBM), per ANSI/ESDA/JEDEC JS-001, all pins(1) –250 250 V
Charged device model (CDM), per JEDEC specification JESD22-C101, all pins(2) –250 250
(1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.
(2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.

7.3 Recommended Operating Conditions

over operating free-air temperature range (unless otherwise noted)
MIN NOM MAX UNIT
GENERAL PARAMETERS
Full-scale output current 30 mA
VREFIO Input voltage range 1.14 1.2 1.26 V
AVDD Analog supply voltage 3 3.3 3.6 V
ƒDAC Output update rate 2.4 GSPS
CMOS INTERFACE (SLEEP, RESTART, INV_CLK, NORMAL, A_ONLY, A_ONLY_INV, A_ONLY_ZS)
VIH High-level input voltage 2 3 V
VIL Low-level input voltage 0 0 0.8 V
DIFFERENTIAL DATA INTERFACE (DA_P[13:0], DA_N[13:0], DB_P[13:0], DB_N[13:0], DTCLK_P, DTCLK_N)
VITH Differential input threshold –100 100 mV
VICOM Input common mode 0.6 1.4 V
CLOCK INPUTS (DACCLK_P, DACCLK_N)
|DACCLK_P – DACCLK_N| Clock differential input voltage 200 1000 mV
Clock duty cycle 40% 60%
VCLKCM Clock common mode 1 1.4 V

7.4 Thermal Information

THERMAL METRIC TEST CONDITIONS TYP UNIT
RθJA Junction-to-free-air thermal resistance Non-thermally enhanced JEDEC standard PCB, per JESD-51, 51-3 41.3 °C/W
RθJC Junction-to-case thermal resistance MIL-STD-883 test method 1012 3.8

7.5 DC Electrical Characteristics

TC,MIN = –55°C to TC,MAX = 125°C, typical values at 25°C, AVDD = 3 V to 3.6 V, IoutFS = 20 mA (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP(1) MAX UNIT
Resolution 14 bits
DC ACCURACY
INL Integral nonlinearity TC,MIN to TC,MAX , ƒDAC = 640 kHz, ƒOUT = 10 kHz –7.5 ±1.5 7.5 LSB
DNL Differential nonlinearity –0.98 ±0.8 1.75
Monotonocity 14 bits
ANALOG OUTPUT
Offset error Mid-code offset –0.45 ±0.09 0.45 %FSR
Gain error With external reference –6.0 ±1.6 6 %FSR
Gain error With internal reference –6.0 ±1.6 6 %FSR
Output compliance range IO(FS) = 20 mA, AVDD = 3.15 to 3.45 V AVDD – 0.5 AVDD + 0.5 V
Output resistance 300(2)
Output capacitance IOUT_P and IOUT_N single ended 13.7(2) pF
REFERENCE OUTPUT
Reference voltage 1.14 1.2 1.26 V
Reference output current 100 nA
REFERENCE INPUT
Input resistance 1(2)
Small-signal bandwidth 1.4 MHz
Input capacitance 3.2(2) pF
TEMPERATURE COEFFICIENTS
Offset drift 75 ppm of FSR/°C
Gain drift With external reference 75 ppm of FSR/°C
Gain drift With internal reference 75 ppm of FSR/°C
Reference voltage drift 35 ppm/°C
POWER SUPPLY
IAVDD Analog supply current ƒDAC = 2.4 GHz, NORMAL input mode 560 650 mA
IAVDD Sleep mode, AVDD supply current Sleep mode (SLEEP pin high) 150 180 mA
P Power dissipation ƒDAC = 2.4 GHz, NORMAL input mode 1800 2350 mW
PSRR Power-supply rejection ratio AVDD = 3.15 to 3.45 V 0.4 1.3 %FSR/V
(1) Typicals are characterization values at 25°C and AVDD = 3.3 V. These parameters are characterized, but not production tested.
(2) Specified by design.

7.6 AC Electrical Characteristics

TC,MIN = –55°C to TC,MAX = 125°C, typical values at 25°C, AVDD = 3 to 3.6 V, IoutFS = 20 mA (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP(1) MAX UNIT
ANALOG OUTPUT
ts(DAC) Output setting time to 0.1% Mid-scale transition 3.5 ns
tpd Output propagation delay 7 DACCLK + 1.5 ns
tr(IOUT) Output rise time, 10% to 90% 280 ps
tf(IOUT) Output fall time, 90% to 10% 280 ps
AC PERFORMANCE
SFDR Spurious-free dynamic range ƒDAC = 2.4 GSPS, ƒOUT = 100 MHz, Dual-port mode, 0 dBFS 46 55 dBc
ƒDAC = 2.4 GSPS, ƒOUT = 200 MHz, Dual-port mode, 0 dBFS 51
ƒDAC = 2.4 GSPS, ƒOUT = 300 MHz, Dual-port mode, 0 dBFS 31 36
ƒDAC = 2.4 GSPS, ƒOUT = 500 MHz, Dual-port mode, 0 dBFS 35 43
ƒDAC = 2.4 GSPS, ƒOUT = 500 MHz, Dual-port mode, –6 dBFS 47
SNR Signal-to-noise ratio ƒDAC = 2.4 GSPS, ƒOUT = 100 MHz, Dual-port mode, 0 dBFS 58 60 dBc
ƒDAC = 2.4 GSPS, ƒOUT = 200 MHz, Dual-port mode, 0 dBFS 60
ƒDAC = 2.4 GSPS, ƒOUT = 300 MHz, Dual-port mode, 0 dBFS 56 62
ƒDAC = 2.4 GSPS, ƒOUT = 500 MHz, Dual-port mode, 0 dBFS 51 58
ƒDAC = 2.4 GSPS, ƒOUT = 500 MHz, Dual-port mode, –6 dBFS 52
THD Total harmonic distortion ƒDAC = 2.4 GSPS, ƒOUT = 100 MHz, Dual-port mode, 0 dBFS 45 52 dBc
ƒDAC = 2.4 GSPS, ƒOUT = 200 MHz, Dual-port mode, 0 dBFS 50
ƒDAC = 2.4 GSPS, ƒOUT = 300 MHz, Dual-port mode, 0 dBFS 31 36
ƒDAC = 2.4 GSPS, ƒOUT = 500 MHz, Dual-port mode, 0 dBFS 35 46
ƒDAC = 2.4 GSPS, ƒOUT = 500 MHz, Dual-port mode, –6 dBFS 44
IMD3 Third-order two-tone intermodulation ƒDAC = 2.4 GSPS, ƒOUT = 99 MHz and 102 MHz, Each tone at –6 dBFS, Dual-port mode. 70 dBc
ƒDAC = 2.4 GSPS, ƒOUT = 200 MHz and 202 MHz, Each tone at –6 dBFS, Dual-port mode. 68 dBc
ƒDAC = 2.4 GSPS, ƒOUT = 253 MHz and 257 MHz, Each tone at –6 dBFS, Dual-port mode. 47 57 dBc
ƒDAC = 2.4 GSPS, ƒOUT = 299 MHz and 302 MHz, Each tone at –6 dBFS, Dual-port mode. 35 55 dBc
IMD Four-tone intermodulation ƒDAC = 2.4 GSPS, ƒOUT = 298 MHz, 299 MHz, 300 MHz, and 301 MHz, Each tone at –12 dBFS, Dual-port mode. 47 62.5 dBc
(1) Typicals are characterization values at 25°C and AVDD = 3.3 V. These parameters are characterized, but not production tested.

7.7 Digital Electrical Characteristics

TC,MIN = –55°C to TC,MAX = 125°C, typical values at 25°C, AVDD = 3 to 3.6 V, IoutFS = 20 mA (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP(1) MAX UNIT
CMOS INTERFACE (SLEEP, RESTART, INV_CLK, NORMAL, A_ONLY, A_ONLY_INV, A_ONLY_ZS)
IIH High-level input current 0.2 10 μA
IIL Low-level input current –10 –0.2 μA
Input capacitance 2.5(2) pF
DIFFERENTIAL DATA INTERFACE (DA_P[13:0], DA_N[13:0], DB_P[13:0], DB_N[13:0], DTCLK_P, DTCLK_N)
ZT Internal termination impedance 80 100 125 Ω
Ci Input capacitance 2.6(2) pF
(1) Typicals are characterization values at 25°C and AVDD = 3.3 V. These parameters are characterized, but not production tested.
(2) Specified by design.
(3) Tested using SNR as pass/fail criteria.

7.8 Timing Requirements

MIN TYP MAX UNIT
DIFFERENTIAL DATA INTERFACE (DA_P[13:0], DA_N[13:0], DB_P[13:0], DB_N[13:0] EXTERNAL TIMING WITH DLL IN RESTART) (See Figure 2)
tsetup Data setup to DLYCLK(3) RESTART = 1, DLYCLK 20-pF load
See Figure 2
4.75 nS
thold Data hold to DLYCLK (3) RESTART = 1, DLYCLK 20-pF load
See Figure 2
–3.5 nS
DLL (See Figure 15)
NegD DLL min negative delay RESTART = 0 150 ps
PosD DLL min positive delay RESTART = 0 600 ps
tvalid CLK/4 internal setup + hold width 160 ps
Fdac RESTART = 0 1 2.4 GHz
loop_timing1_gls386.gifFigure 1. DLL Input Loop Functional Timing
dll_gls386.gifFigure 2. External Interface Timing With DLL in Restart
D001_SGLS386.gif
A. See data sheet for absolute maximum and minimum recommended operating conditions.
B. Silicon operating life design goal is 10 years at 105°C junction temperature (does not include package interconnect life).
Figure 3. DAC5670-SP – 192/GEM Package
Operating Life Derating Chart

7.9 Typical Characteristics

singletone_gls386.gif
Figure 4. Single-Tone Spectrum Power vs Frequency
if250_gls386.gif
Figure 6. W-CDMA TM1 Single Carrier Power vs Frequency
dualcarrier_gls386.gif
Figure 8. W-CDMA TM1 Dual Carrier Power vs Frequency
fourcarrier_gls386.gif
Figure 10. W-CDMA TM1 Four Carrier Power vs Frequency
twotone_gls386.gif
Figure 5. Two-Tone IMD (Power) vs Frequency
if491_gls386.gif
Figure 7. W-CDMA TM1 Single Carrier Power vs Frequency
threecarrier_gls386.gif
Figure 9. W-CDMA TM1 Three Carrier Power vs Frequency