DAC5675A-SP Radiation-Tolerant, 14-Bit, 400-MSPS Digital-to-Analog Converter
- SGLS387H July 2007 – August 2016 DAC5675A-SP
  
  PRODUCTION DATA.

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DATA SHEET

DAC5675A-SP Radiation-Tolerant, 14-Bit, 400-MSPS Digital-to-Analog Converter

1 Features

QMLV (QML Class V) MIL-PRF-38535 Qualified, SMD 5962-07204
- 5962-0720401VXC – Qualified over the Military Temperature Range (–55°C to 125°C)
- 5962-0720402VXC – Qualified over Reduced Temperature Range (–55°C to 115°C) for Improved Dynamic Performance
High-Performance 52-Pin Ceramic Quad Flat Pack (HFG)
400-MSPS Update Rate
LVDS-Compatible Input Interface
Spurious-Free Dynamic Range (SFDR) to Nyquist
- 69 dBc at 70 MHz IF, 400 MSPS
W-CDMA Adjacent Channel Power Ratio (ACPR)
- 73 dBc at 30.72 MHz IF, 122.88 MSPS
- 71 dBc at 61.44 MHz IF, 245.76 MSPS
Differential Scalable Current Outputs: 2 to 20 mA
On-Chip 1.2-V Reference
Single 3.3-V Supply Operation
Power Dissipation: 660 mW at ƒ_CLK = 400 MSPS, ƒ_OUT = 20 MHz

2 Applications

Radiation Hardened Digital to Analog (DAC) Applications
Space Satellite RF Data Transmission
Cellular Base Transceiver Station Transmit Channel:
- CDMA: WCDMA, CDMA2000, IS-95
- TDMA: GSM, IS-136, EDGE/GPRS
- Supports Single-Carrier and Multicarrier Applications
Engineering Evaluation (/EM) Samples are Available ⁽¹⁾

⁽¹⁾

(1)These units are intended for engineering evaluation only. They are processed to a non-compliant flow (for example, no burn-in) and are tested to temperature rating of 25°C only. These units are not suitable for qualification, production, radiation testing or flight use. Parts are not warranted for performance on full MIL specified temperature range of –55°C to 125°C or operating life.

3 Description

The DAC5675A-SP is a radiation-tolerant, 14-bit resolution high-speed digital-to-analog converter (DAC) primarily suited for space satellite applications. The DAC5675A-SP is designed for high-speed digital data transmission in wired and wireless communication systems, high-frequency direct digital synthesis (DDS), and waveform reconstruction in test and measurement applications. The DAC5675A-SP has excellent SFDR at high intermediate frequencies, which makes it well suited for multicarrier transmission in TDMA and CDMA based cellular base transceiver stations (BTSs).

The DAC5675A-SP operates from a single supply voltage of 3.3 V. Power dissipation is 660 mW at ƒ_CLK = 400 MSPS, ƒ_OUT = 70 MHz. The DAC5675A-SP provides a nominal full-scale differential current output of 20 mA, supporting both single-ended and differential applications. The output current can be directly fed to the load with no additional external output buffer required. The output is referred to the analog supply voltage AV_DD.

The DAC5675A-SP includes a low-voltage differential signaling (LVDS) interface for high-speed digital data input. LVDS features a low differential voltage swing with a low constant power consumption across frequency, allowing for high-speed data transmission with low noise levels (low electromagnetic interference (EMI)).

Device Information⁽¹⁾

PART NUMBER	PACKAGE	BODY SIZE (NOM)
DAC5675A-SP	HFG (52 CQFP)	19.05 mm × 19.05 mm

For all available packages, see the orderable addendum at the end of the data sheet.

Simplified Schematic

4 Revision History

Changes from G Revision (August 2014) to H Revision

Updated supply voltage absolute maximum rating for AV_DD to DV_DD Go
Added sentence explaining AV_DD and DV_DD simultaneous rampGo
Added Receiving Notification of Documentation Updates and Community Resources sectionsGo

Changes from F Revision (January 2014) to G Revision

Added ESD Ratings table, Feature Description section, Device Functional Modes, Application and Implementation section, Power Supply Recommendations section, Layout section, Device and Documentation Support section, and Mechanical, Packaging, and Orderable Information section Go
Updated supply voltage absolute maximum ratings for AV_DD to DV_DD Go

Changes from E Revision (April 2013) to F Revision

Added /EM bullet to FeaturesGo
Deleted Ordering Information tableGo

5 Description (continued)

LVDS is typically implemented in low-voltage digital CMOS processes, making it the ideal technology for high-speed interfacing between the DAC5675A-SP and high-speed low-voltage CMOS ASICs or FPGAs.

The DAC5675A-SP current-source-array architecture supports update rates of up to 400 MSPS. On-chip edge-triggered input latches provide for minimum setup and hold times, thereby relaxing interface timing.

The DAC5675A-SP is specifically designed for a differential transformer-coupled output with a 50-Ω doubly-terminated load. With the 20-mA full-scale output current, both a 4:1 impedance ratio (resulting in an output power of 4 dBm) and 1:1 impedance ratio transformer (–2 dBm) is supported. The last configuration is preferred for optimum performance at high output frequencies and update rates. The outputs are terminated to AVDD and have voltage compliance ranges from AV_DD – 1 to AV_DD + 0.3 V.

An accurate on-chip 1.2-V temperature-compensated bandgap reference and control amplifier allows the user to adjust this output current from 20 to 2 mA. This provides 20-dB gain range control capabilities. Alternatively, an external reference voltage may be applied. The DAC5675A-SP features a SLEEP mode, which reduces the standby power to approximately 18 mW.

The DAC5675A-SP is available in a 52-pin ceramic nonconductive tie-bar package (HFG). The device is specified for operation over the military temperature range of –55°C to 125°C and W temperature range of –55°C to 115°C.

6 Pin Configuration and Functions

HFG Package

52-Pin CQFP

(Top View)

Pin Functions

PIN		I/O	DESCRIPTION
NAME	NO.	I/O	DESCRIPTION
AGND	13, 20, 26, 39, 44, 49, 50, 52	I	Analog negative supply voltage (ground). Pin 13 is internally connected to the heat slug and lid (lid is also grounded internally).
AV_DD	21, 45, 48, 51	I	Analog positive supply voltage
BIASJ	42	O	Full-scale output current bias
CLK	23	I	External clock input
CLKC	22	I	Complementary external clock
D[13:0]A	1, 3, 5, 7, 9, 11, 14, 24, 27, 29, 31, 33, 35, 37	I	LVDS positive input, data bits 13–0. D13A is the most significant data bit (MSB). D0A is the least significant data bit (LSB).
D[13:0]B	2, 4, 6, 8, 10, 12, 15, 25, 28, 30, 32, 34, 36, 38	I	LVDS negative input, data bits 13–0. D13B is the most significant data bit (MSB). D0B is the least significant data bit (LSB).
DGND	17, 19	I	Digital negative supply voltage (ground)
DV_DD	16, 18	I	Digital positive supply voltage
EXTIO	43	I/O	Internal reference output or external reference input. Requires a 0.1-μF decoupling capacitor to AGND when used as reference output.
IOUT1	46	O	DAC current output. Full-scale when all input bits are set '0'. Connect the reference side of the DAC load resistors to AV_DD.
IOUT2	47	O	DAC complementary current output. Full-scale when all input bits are '1'. Connect the reference side of the DAC load resistors to AV_DD.
NC	41		Not connected in chip. Can be high or low.
SLEEP	40	I	Asynchronous hardware power-down input. Active high. Internal pulldown.

7 Specifications

7.1 Absolute Maximum Ratings

over operating junction temperature range (unless otherwise noted)⁽¹⁾

		MIN	MAX	UNIT
Supply voltage	AV_DD⁽²⁾	–0.3	3.6	V
	DV_DD⁽³⁾	–0.3	3.6	V
	AV_DD to DV_DD	–0.7	0.7	V
Voltage between AGND and DGND		–0.3	0.5	V
CLK, CLKC⁽²⁾		–0.3	AV_DD + 0.3	V
Digital input D[13:0]A, D[13:0]B⁽³⁾, SLEEP, DLLOFF		–0.3	DV_DD + 0.3	V
IOUT1, IOUT2⁽²⁾		–1	AV_DD + 0.3	V
EXTIO, BIASJ⁽²⁾		–1	AV_DD + 0.3	V
Peak input current (any input)			20	mA
Peak total input current (all inputs)			–30	mA
Lead temperature 1.6 mm (1/16 inch) from the case for 10 s			260	°C
Storage temperature, T_stg		–65	150	°C

(1) Stresses above those listed under Absolute Maximum Ratings may cause permanent damage to the device. Exposure to absolute maximum conditions for extended periods may degrade device reliability. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Conditions is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.

(2) Measured with respect to AGND

(3) Measured with respect to DGND

7.2 ESD Ratings

			VALUE	UNIT
V_(ESD)	Electrostatic discharge	Human body model (HBM), per ANSI/ESDA/JEDEC JS-001, all pins⁽¹⁾	±4000	V

(1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.

7.3 Recommended Operating Conditions

over operating junction temperature range (unless otherwise noted)

			MIN	NOM	MAX	UNIT
A_VDD	Analog supply voltage		3.15	3.3	3.6	V
D_VDD	Digital supply voltage		3.15	3.3	3.6	V
T_J	Operating junction temperature	5962-0720401	–55		125	°C
T_J	Operating junction temperature	5962-0720402	–55		115	°C

7.4 Thermal Information

THERMAL METRIC⁽¹⁾		DAC5675A-SP	UNIT
		HFG (CQFP)
		52 PINS
R_θJA	Junction-to-free-air thermal resistance⁽²⁾	21.813	°C/W
R_θJC(bot)	Junction-to-case (bottom) thermal resistance⁽³⁾	0.849	°C/W
R_θJB	Junction-to-board thermal resistance	N/A
ψ_JT	Junction-to-top characterization parameter	N/A
ψ_JB	Junction-to-board characterization parameter	N/A

(1) For more information about traditional and new thermal metrics, see the IC Package Thermal Metrics application report, SPRA953.

(2) Board mounted, per JESD 51-5 methodology

(3) MIL-STD-883 test method 1012

7.5 DC Electrical Characteristics (Unchanged After 100 kRad)

over operating junction temperature range, typical values at 25°C, AV_DD = 3.3 V, DV_DD = 3.3 V, I_O(FS) = 20 mA (unless otherwise noted)

PARAMETER		TEST CONDITIONS	5962-0720401			5962-0720402			UNIT
PARAMETER		TEST CONDITIONS	MIN	TYP	MAX	MIN	TYP	MAX	UNIT
Resolution			14			14			bit
DC ACCURACY⁽¹⁾
INL	Integral nonlinearity	T_MIN to T_MAX	–4	±1.5	4.6	–4	±1.5	4.6	LSB
DNL	Differential nonlinearity	T_25°C to T_MAX	–2	±0.6	2.2	–2	±0.6	2.2	LSB
DNL	Differential nonlinearity	T_MIN	–2	±0.6	2.5	–2	±0.6	2.5	LSB
Monotonicity			Monotonic 12b level			Monotonic 12b level
ANALOG OUTPUT
I_O(FS)	Full-scale output current		2		20	2		20	mA
	Output compliance range	AV_DD = 3.15 to 3.45 V, I_O(FS) = 20 mA	AV_DD – 1		AV_DD + 0.3	AV_DD – 1		AV_DD + 0.3	V
	Offset error			0.01			0.01		%FSR
	Gain error	Without internal reference	–10	5	10	–10	5	10	%FSR
	Gain error	With internal reference	–10	2.5	10	–10	2.5	10	%FSR
	Output resistance			300			300		kΩ
	Output capacitance			5			5		pF
REFERENCE OUTPUT
V_(EXTIO)	Reference voltage		1.17	1.23	1.3	1.17	1.23	1.3	V
	Reference output current⁽²⁾			100			100		nA
REFERENCE INPUT
V_(EXTIO)	Input reference voltage		0.6	1.2	1.25	0.6	1.2	1.25	V
	Input resistance			1			1		MΩ
	Small-signal bandwidth			1.4			1.4		MHz
	Input capacitance			100			100		pF
TEMPERATURE COEFFICIENTS
	Offset drift			12			12		ppm of FSR/°C
ΔV_(EXTIO)	Reference voltage drift			±50			±50		ppm/°C
POWER SUPPLY
AV_DD	Analog supply voltage		3.15	3.3	3.6	3.15	3.3	3.6	V
DV_DD	Digital supply voltage		3.15	3.3	3.6	3.15	3.3	3.6	V
I_(AVDD)	Analog supply current⁽³⁾			115	148		115	138	mA
I_(DVDD)	Digital supply current⁽³⁾			85	130		85	120	mA
P_D	Power dissipation	Sleep mode		18			18		mW
P_D	Power dissipation	AV_DD = 3.3 V, DV_DD = 3.3 V		660	900		660	850	mW
APSRR	Analog and digital power-supply rejection ratio	AV_DD = 3.15 to 3.45 V	–0.9	±0.1	0.9	–0.9	±0.1	0.9	%FSR/V
DPSRR	Analog and digital power-supply rejection ratio	AV_DD = 3.15 to 3.45 V	–0.9	±0.1	0.9	–0.9	±0.1	0.9	%FSR/V

(1) Measured differential at I_OUT1 and I_OUT2: 25 Ω to AV_DD.

(2) Use an external buffer amplifier with high impedance input to drive any external load.

(3) Measured at ƒ_CLK = 400 MSPS and ƒ_OUT = 70 MHz.

7.6 AC Electrical Characteristics (Unchanged After 100 kRad)

over operating junction temperature range, typical values at 25°C, AV_DD = 3.3 V, DV_DD = 3.3 V, I_O(FS) = 20 mA, differential transformer-coupled output, 50-Ω doubly-terminated load (unless otherwise noted)

PARAMETER		TEST CONDITIONS		5962-0720401			5962-0720402			UNIT
PARAMETER		TEST CONDITIONS		MIN	TYP	MAX	MIN	TYP	MAX	UNIT
ANALOG OUTPUT
ƒ_CLK	Output update rate					400			400	MSPS
t_s(DAC)	Output setting time to 0.1%	Transition: code x2000 to x23_FF			12			12		ns
t_PD	Output propagation delay				1			1		ns
t_r(IOUT)	Output rise time, 10% to 90%				300			300		ps
t_f(IOUT)	Output fall time, 90% to 10%				300			300		ps
	Output noise	IOUT_FS = 20 mA			55			55		pA/√Hz
	Output noise	IOUT_FS = 2 mA			30			30		pA/√Hz
AC LINEARITY
THD	Total harmonic distortion	ƒ_CLK = 100 MSPS, ƒ_OUT = 19.9 MHz			70			70		dBc
		ƒ_CLK = 160 MSPS, ƒ_OUT = 41 MHz			72			72
		ƒ_CLK = 200 MSPS, ƒ_OUT = 70 MHz			68			68
		ƒ_CLK = 400 MSPS	ƒ_OUT = 20 MHz	60	68		62	68
			ƒ_OUT = 20 MHz, for T_MIN	57			57
			ƒ_OUT = 70 MHz		67			67
			ƒ_OUT = 140 MHz		55			55
SFDR	Spurious-free dynamic range to Nyquist	ƒ_CLK = 100 MSPS, ƒ_OUT = 19.9 MHz			70			70		dBc
		ƒ_CLK = 160 MSPS, ƒ_OUT = 41 MHz			73			73
		ƒ_CLK = 200 MSPS, ƒ_OUT = 70 MHz			70			70
		ƒ_CLK = 400 MSPS	ƒ_OUT = 20 MHz	62	68		63	68
			ƒ_OUT = 20 MHz, for T_MIN	61			61
			ƒ_OUT = 70 MHz		69			69
			ƒ_OUT = 140 MHz		56			56
SFDR	Spurious-free dynamic range within a window, 5 MHz span	ƒ_CLK = 100 MSPS, ƒ_OUT = 19.9 MHz			82			82		dBc
		ƒ_CLK = 160 MSPS, ƒ_OUT = 41 MHz			77			77
		ƒ_CLK = 200 MSPS, ƒ_OUT = 70 MHz			82			82
		ƒ_CLK = 400 MSPS	ƒ_OUT = 20 MHz		82			82
			ƒ_OUT = 70 MHz		82			82
			ƒ_OUT = 140 MHz		75			75
SNR	Signal-to-noise ratio	ƒ_CLK = 400 MSPS, ƒ_OUT = 20 MHz		60	67		60	67		dBc
ACPR	Adjacent channel power ratio WCDM A with 3.84 MHz BW, 5 MHz channel spacing	ƒ_CLK = 122.88 MSPS, IF = 30.72 MHz, see Figure 9			73			73		dB
		ƒ_CLK = 245.76 MSPS, IF = 61.44 MHz,			71			71
		ƒ_CLK = 399.36 MSPS, IF = 153.36 MHz, see Figure 11			65			65
IMD	Two-tone intermodulation to Nyquist (each tone at –6 dBfs)	ƒ_CLK = 400 MSPS, ƒ_OUT1 = 70 MHz, ƒ_OUT2 = 71 MHz			73			73		dBc
	Two-tone intermodulation to Nyquist (each tone at –6 dBfs)	ƒ_CLK = 400 MSPS, ƒ_OUT1 = 140 MHz, ƒ_OUT2 = 141 MHz			62			62
	Four-tone intermodulation, 15-MHz span, missing center tone (each tone at –16 dBfs)	ƒ_CLK = 156 MSPS, ƒ_OUT = 15.6, 15.8, 16.2, 16.4 MHz			82			82
		ƒ_CLK = 400 MSPS, ƒ_OUT = 68.1, 69.3, 71.2, 72 MHz			74			74

7.7 Digital Specifications (Unchanged After 100 kRad)

over operating junction temperature range, typical values at 25°C, AV_DD = 3.3 V, DV_DD = 3.3 V (unless otherwise noted)

PARAMETER		TEST CONDITIONS	5962-0720401			5962-0720402			UNIT
PARAMETER		TEST CONDITIONS	MIN	TYP	MAX	MIN	TYP	MAX	UNIT
LVDS INTERFACE: NODES D[13:0]A, D[13:0]B
V_ITH+	Positive-going differential input voltage threshold			100			100		mV
V_ITH–	Negative-going differential input voltage threshold			–100			–100		mV
Z_T	Internal termination impedance		90	110	132	90	110	132	Ω
C_I	Input capacitance			2			2		pF
CMOS INTERFACE (SLEEP)
V_IH	High-level input voltage		2	3.3		2	3.3		V
V_IL	Low-level input voltage			0	0.8		0	0.8	V
I_IH	High-level input current		10		100	10		100	μA
I_IL	Low-level input current		–10		10	–10		10	μA
	Input capacitance			2			2		pF
CLOCK INTERFACE (CLK, CLKC)
\|CLK-CLKC\|	Clock differential input voltage		0.4		0.8	0.4		0.8	V_PP
t_w(H)	Clock pulse width high			1.25			1.25		ns
t_w(L)	Clock pulse width low			1.25			1.25		ns
	Clock duty cycle		40%		60%	40%		60%
V_CM	Common-mode voltage range		1.6	2	2.4	1.6	2	2.4	V
	Input resistance	Node CLK, CLKC		670			670		Ω
	Input capacitance	Node CLK, CLKC		2			2		pF
	Input resistance	Differential		1.3			1.3		kΩ
	Input capacitance	Differential		1			1		pF
TIMING
t_SU	Input setup time		1.5			1.5			ns
t_H	Input hold time		0			0			ns
t_DD	Digital delay time (DAC latency)			3			3		clk

Figure 1. Timing Diagram

7.8 Electrical Characteristics⁽¹⁾

over operating junction temperature range, AV_DD = 3.3 V, DV_DD = 3.3 V, I_O(FS) = 20 mA (unless otherwise noted)

APPLIED VOLTAGES		RESULTING DIFFERENTIAL INPUT VOLTAGE	RESULTING COMMON-MODE INPUT VOLTAGE	LOGICAL BIT BINARY EQUIVALENT	COMMENT
V_A (V)	V_B (V)	V_A,B (mV)	V_COM (V)
1.25	1.15	100	1.2	1	Operation with minimum differential voltage (±100 mV) applied to the complementary inputs versus common-mode range
1.15	1.25	–100	1.2	0
2.4	2.3	100	2.35	1
2.3	2.4	–100	2.35	0
0.1	0	100	0.05	1
0	0.1	–100	0.05	0
1.5	0.9	600	1.2	1	Operation with maximum differential voltage (±600 mV) applied to the complementary inputs versus common-mode range
0.9	1.5	–600	1.2	0
2.4	1.8	600	2.1	1
1.8	2.4	–600	2.1	0
0.6	0	600	0.3	1
0	0.6	–600	0.3	0

(1) Specifications subject to change.

Figure 2. LVDS Timing Test Circuit and Input Test Levels

7.9 Typical Characteristics

Figure 3. Differential Nonlinearity (DNL) vs Input Code

Figure 5. Two-Tone IMD (Power) vs Frequency

Figure 7. Single-Tone Spectrum Power vs Frequency

Figure 9. W-CDMA TM1 Single Carrier Power vs Frequency

Figure 11. W-CDMA TM1 Single Carrier ACLR vs Output Frequency

Figure 4. Integral Nonlinearity (INL) vs Input Code

Figure 6. Two-Tone IMD3 vs Frequency

Figure 8. Spurious-Free Dynamic Range vs Frequency

Figure 10. W-CDMA TM1 Dual Carrier Power vs Frequency