JAJSI71C April 2019 – February 2023 DLP470NE
PRODUCTION DATA
MIN | NOM | MAX | UNIT | ||
---|---|---|---|---|---|
VOLTAGE SUPPLY | |||||
VCC | LVCMOS logic supply voltage(1) | 1.65 | 1.8 | 1.95 | V |
VOFFSET | Mirror electrode and HVCMOS voltage(1)(2) | 9.5 | 10 | 10.5 | V |
VBIAS | Mirror electrode voltage(1) | 17.5 | 18 | 18.5 | V |
VRESET | Mirror electrode voltage(1) | –14.5 | –14 | –13.5 | V |
|VBIAS – VOFFSET| | Supply voltage difference (absolute value)(3) | 10.5 | V | ||
|VBIAS – VRESET| | Supply voltage difference (absolute value)(4) | 33 | V | ||
LVCMOS INTERFACE | |||||
VIH(DC) | DC input high voltage(5) | 0.7 × VCC | VCC + 0.3 | V | |
VIL(DC) | DC input low voltage(5) | –0.3 | 0.3 × VCC | V | |
VIH(AC) | AC input high voltage(5) | 0.8 × VCC | VCC + 0.3 | V | |
VIL(AC) | AC input low voltage(5) | –0.3 | 0.2 × VCC | V | |
tPWRDNZ | PWRDNZ pulse duration(6) | 10 | ns | ||
SCP INTERFACE | |||||
ƒSCPCLK | SCP clock frequency(7) | 500 | kHz | ||
tSCP_PD | Propagation delay, Clock to Q, from rising–edge of SCPCLK to valid SCPDO(8) | 0 | 900 | ns | |
tSCP_NEG_ENZ | Time between falling-edge of SCPENZ and the first rising- edge of SCPCLK | 1 | µs | ||
tSCP_POS_ENZ | Time between falling-edge of SCPCLK and the rising-edge of SCPENZ | 1 | µs | ||
tSCP_DS | SCPDI Clock setup time (before SCPCLK falling edge)(8) | 800 | ns | ||
tSCP_DH | SCPDI Hold time (after SCPCLK falling edge)(8) | 900 | ns | ||
tSCP_PW_ENZ | SCPENZ inactive pulse duration (high level) | 2 | µs | ||
LVDS INTERFACE | |||||
ƒCLOCK | Clock frequency for LVDS interface (all channels), DCLK(9) | 400 | MHz | ||
|VID| | Input differential voltage (absolute value)(10) | 150 | 300 | 440 | mV |
VCM | Common mode voltage(10) | 1100 | 1200 | 1300 | mV |
VLVDS | LVDS voltage(10) | 880 | 1520 | mV | |
tLVDS_RSTZ | Time required for LVDS receivers to recover from PWRDNZ | 2000 | ns | ||
ZIN | Internal differential termination resistance | 80 | 100 | 120 | Ω |
ZLINE | Line differential impedance (PWB/trace) | 90 | 100 | 110 | Ω |
ENVIRONMENTAL | |||||
TARRAY | Array temperature, long–term operational(11)(12)(14) | 10 | 40 to 70(13) | °C | |
Array temperature, short–term operational(12)(15) | 0 | 10 | °C | ||
TWINDOW | Window temperature – operational(19)(21) | 85 | °C | ||
|TDELTA| | Absolute temperature delta between any point on the window edge and the ceramic test point TP1(16)(17) | 14 | °C | ||
TDP -AVG | Average dew point temperature (non–condensing)(18) | 28 | °C | ||
TDP-ELR | Elevated dew point temperature range (non-condensing)(20) | 28 | 36 | °C | |
CTELR | Cumulative time in elevated dew point temperature range | 24 | Months | ||
ILLUMINATION (Lamp) |
|||||
L | Operating system luminance (17) | 4000 | lm | ||
ILLUV | Illumination wavelengths < 395 nm(11) | 0.68 | 2.00 | mW/cm2 | |
ILLVIS | Illumination wavelengths between 395 nm and 800 nm | Thermally limited | mW/cm2 | ||
ILLIR | Illumination wavelengths > 800 nm | 10 | mW/cm2 | ||
ILLθ | Illumination marginal ray angle(21) | 55 | deg | ||
ILLUMINATION (Solid State) | |||||
L | Operating system luminance (17) |
5500 |
lm | ||
ILLUV | Illumination wavelengths < 436 nm(11) |
0.45 |
mW/cm2 | ||
ILLVIS | Illumination wavelengths between 436 nm and 800 nm |
Thermally Limited |
mW/cm2 | ||
ILLIR | Illumination wavelengths > 800 nm |
10 |
mW/cm2 | ||
ILLθ | Illumination marginal ray angle(21) |
55 |
deg |