JAJSUJ2 May   2024

ADVANCE INFORMATION  

  1.   1
  2. 特長
  3. アプリケーション
  4. 概要
  5. Pin Configuration and Functions
  6. Specifications
    1. 5.1  Absolute Maximum Ratings
    2. 5.2  Storage Conditions
    3. 5.3  ESD Ratings
    4. 5.4  Recommended Operating Conditions
    5.     11
    6.     12
    7. 5.5  Thermal Information
    8. 5.6  Electrical Characteristics
    9. 5.7  Switching Characteristics
    10. 5.8  Timing Requirements
    11. 5.9  System Mounting Interface Loads
    12. 5.10 Micromirror Array Physical Characteristics
    13. 5.11 Micromirror Array Optical Characteristics
    14. 5.12 Window Characteristics
    15. 5.13 Chipset Component Usage Specification
  7. Detailed Description
    1. 6.1 Overview
    2. 6.2 Functional Block Diagram
    3. 6.3 Feature Description
      1. 6.3.1 Power Interface
      2. 6.3.2 Timing
    4. 6.4 Device Functional Modes
    5. 6.5 Optical Interface and System Image Quality Considerations
      1. 6.5.1 Numerical Aperture and Stray Light Control
      2. 6.5.2 Pupil Match
      3. 6.5.3 Illumination Overfill
    6. 6.6 Micromirror Array Temperature Calculation
    7. 6.7 Micromirror Power Density Calculation
    8. 6.8 Window Aperture Illumination Overfill Calculation
    9. 6.9 Micromirror Landed-On/Landed-Off Duty Cycle
      1. 6.9.1 Definition of Micromirror Landed-On/Landed-Off Duty Cycle
      2. 6.9.2 Landed Duty Cycle and Useful Life of the DMD
      3. 6.9.3 Landed Duty Cycle and Operational DMD Temperature
      4. 6.9.4 Estimating the Long-Term Average Landed Duty Cycle of a Product or Application
  8. Application and Implementation
    1. 7.1 Application Information
    2. 7.2 Typical Application
      1. 7.2.1 Design Requirements
      2. 7.2.2 Detailed Design Procedure
      3. 7.2.3 Application Curve
    3. 7.3 Temperature Sensor Diode
  9. Power Supply Recommendations
    1. 8.1 DMD Power Supply Power-Up Procedure
    2. 8.2 DMD Power Supply Power-Down Procedure
  10. Layout
    1. 9.1 Layout Guidelines
    2. 9.2 Impedance Requirements
    3. 9.3 Layers
    4. 9.4 Trace Width, Spacing
    5. 9.5 Power
    6. 9.6 Trace Length Matching Recommendations
  11. 10Device and Documentation Support
    1. 10.1 サード・パーティ製品に関する免責事項
    2. 10.2 Device Support
      1. 10.2.1 Device Nomenclature
      2. 10.2.2 Device Markings
    3. 10.3 Documentation Support
      1. 10.3.1 Related Documentation
    4. 10.4 Receiving Notification of Documentation Updates
    5. 10.5 サポート・リソース
    6. 10.6 Trademarks
    7. 10.7 静電気放電に関する注意事項
    8. 10.8 用語集
  12. 11Revision History
  13. 12Mechanical, Packaging, and Orderable Information
    1. 12.1 Package Option Addendum
      1. 12.1.1 Packaging Information

パッケージ・オプション

メカニカル・データ(パッケージ|ピン)
サーマルパッド・メカニカル・データ
発注情報

Recommended Operating Conditions

Over operating free-air temperature range and supply voltages (unless otherwise noted). The functional performance of the device specified in this data sheet is achieved when operating the device within the limits defined by the Recommended Operating Conditions. No level of performance is implied when operating the device above or below the Recommended Operating Conditions limits.
MINTYPMAXUNIT
SUPPLY VOLTAGES (1) (2)
VDDSupply voltage for LVCMOS core logic and low-speed interface (LSIF)1.711.81.95V
VDDASupply voltage for high speed serial interface (HSSI) receivers1.711.81.95V
VOFFSETSupply voltage for HVCMOS and micromirror electrode(3)9.51010.5V
VBIASSupply voltage for micromirror electrode17.51818.5V
VRESETSupply voltage for micromirror electrode–14.5–14–13.5V
| VDDA – VDD |Supply voltage delta, absolute value(4)0.3V
| VBIAS – VOFFSET |Supply voltage delta, absolute value(5)10.5V
| VBIAS – VRESET |Supply voltage delta, absolute value33V
LVCMOS INPUT
VIHHigh-level input voltage(6) 0.7 × VDDV
VILLow-level input voltage(6)0.3 x VDDV
LOW SPEED SERIAL INTERFACE (LSIF)
fCLOCKLSIF clock frequency (LS_CLK)(14)108120130MHz
DCDINLSIF duty cycle distortion (LS_CLK)44%56%
| VID |LSIF differential input voltage magnitude(14)150350440mV
VLVDSLSIF voltage(14)5751520mV
VCMCommon mode voltage(14)7009001300mV
ZLINELine differential impedance (PWB/trace)90100110Ω
ZINInternal differential termination resistance80100120Ω
HIGH SPEED SERIAL INTERFACE (HSSI)
fCLOCKHSSI clock frequency (DCLK)(15)1.21.6GHz
DCDINHSSI duty cycle distortion (DCLK)44%50%56%
| VID | DataHSSI differential input voltage magnitude Data Lane(15)100600mV
| VID | CLKHSSI differential input voltage magnitude Clock Lane(15)295600mV
VCMDC DataInput common mode voltage (DC) Data Lane(15)200600800mV
VCMDC CLKInput common mode voltage (DC) Clk Lane(15)200600800mV
VCMACp-pAC peak to peak (ripple) on common mode voltage of Data Lane and Clock Lane(15) 100mV
ZLINELine differential impedance (PWB/trace)100Ω
ZINInternal differential termination resistance ( RXterm )80100120Ω
ENVIRONMENTAL
TARRAYArray temperature, long–term operational(7)(16)(8)1040 to 70 (17)°C
Array temperature, short-term operational, 500 hr max(16)(9)010°C
TDP-AVGAverage dew point temperature (non–condensing)(10)28°C
TDP-ELRElevated dew point temperature range (non-condensing)(11)2836°C
CTELRCumulative time in elevated dew point temperature range24months
QAP-LLWindow Aperture illumination overfill(18)(12)(19)17W/cm2
LAMP ILLUMINATION
ILLUVIllumination power at wavelength < 395nm(7)(20)0.682mW/cm2
ILLVISIllumination power at wavelengths ≥395nm and ≤800nm(13)(20)36.8W/cm2
ILLIRIllumination power at wavelength > 800nm(20)10mW/cm2
SOLID STATE ILLUMINATION
ILLUVIllumination power at wavelength < 410nm(7)(20)10mW/cm2
ILLVISIllumination power at wavelengths between ≥410nm and ≤800nm(13)(20)46.8W/cm2
ILLIRIllumination power at wavelength > 800nm(20)10mW/cm2
ILLBLUIllumination power at wavelengths between ≥410nm and ≤475nm(13)(20)14.9W/cm2
ILLBLU1Illumination power at wavelengths between ≥410nm and ≤440nm(13)(20)2.4W/cm2
Simultaneous exposure of the DMD to the maximum Recommended Operating Conditions for temperature and UV illumination reduces the device's lifetime.
The average over time (including storage and operating) that the device is not in the elevated dew point temperature range.
Exposure to dew point temperatures in the elevated range during storage and operation is limited to less than a total cumulative time of CTELR.
The active area of the DMD is surrounded by an aperture on the inside of the DMD window surface that masks structures of the DMD device assembly from normal view. The aperture is sized to anticipate several optical conditions. Overfill light illuminating the area outside the active array can scatter and create adverse effects to the performance of an end application using the DMD. Minimizing the light flux incident outside the active array is a design requirement of the illumination optical system. Depending on the particular optical architecture and assembly tolerances of the optical system, the amount of overfill light on the outside of the active array may cause system performance degradation.
The maximum allowable optical power incident on the DMD is limited by the maximum optical power density for each wavelength range specified and the micromirror array temperature (TARRAY).
See the low speed interface (LSIF) timing requirements in Section 7.3.
See the high speed serial interface (HSSI) timing requirements in Section 7.3.
The array temperature cannot be measured directly and must be computed analytically from the temperature measured at test point 1 (TP1), shown in Figure 6-1 using the Section 6.6.
Per the Maximum Recommended Array Temperature—Derating Curve figure, the maximum operational array temperature is derated based on the micromirror landed duty cycle that the DMD experiences in the end application. See Section 6.9 for a definition of micromirror landed duty cycle
Applies to region defined in the Figure 5-2 figure.
To calculate, see Section 6.8.
To calculate, see Section 6.6.