Over operating free-air temperature range (unless otherwise noted). The functional performance of the device specified in this data sheet is achieved when operating the device within the limits defined by this table. No level of performance is implied when operating the device above or below these limits. | MIN | NOM | MAX | UNIT |
---|
VOLTAGE SUPPLY |
VCC | Supply voltage for LVCMOS core logic(1) | 3.0 | 3.3 | 3.6 | V |
VCCI | Supply voltage for LVDS
interface(1) | 3.0 | 3.3 | 3.6 | V |
VOFFSET | Micromirror electrode and
HVCMOS voltage(1)(2) | 8.25 | 8.5 | 8.75 | V |
VMBRST | Micromirror bias / reset
voltage(1) | –27 | | 26.5 | V |
|VCC – VCCI| | Supply voltage delta (absolute value)(3) | | 0 | 0.3 | V |
LVCMOS INTERFACE |
VIH | Input high voltage | 1.7 | 2.5 | VCC + 0.3 | V |
VIL | Input low voltage | –0.3 | | 0.7 | V |
IOH | High level output
current | | | –20 | mA |
IOL | Low level output
current | | | 15 | mA |
tPWRDNZ | PWRDNZ pulse width(4) | 10 | | | ns |
SCP INTERFACE |
ƒSCPCLK | SCP clock frequency(5) | 50 | | 500 | kHz |
tSCP_PD | Propagation delay, clock to Q,
from rising-edge of SCPCLK to valid SCPDO(6) | 0 | | 900 | ns |
tSCP_DS | SCPDI clock setup time (before SCPCLK falling-edge)(6) | 800 | | | ns |
tSCP_DH | SCPDI hold time (after SCPCLK falling-edge)(6) | 900 | | | ns |
tSCP_NEG_ENZ | Time between falling-edge of
SCPENZ and the rising-edge of SCPCLK.(5) | 1 | | | us |
SCP_POS_ENZ | Time between falling-edge of
SCPCLK and the rising-edge of SCPENZ | 1 | | | us |
tSCP_OUT_EN | Time required for SCP output
buffer to recover after SCPENZ (from tristate) | | | 192/ƒDCLK | s |
tSCP_PW_ENZ | SCPENZ inactive pulse width (high level) | 1 | | | 1/ƒscpclk |
tr | Rise Time (20% to 80%). See
(6). | | | 200 | ns |
tf | Fall time (80% to 20%). See
(6). | | | 200 | ns |
LVDS INTERFACE |
ƒCLOCK | Clock frequency for LVDS interface (all channels), DCLK(7) | | 320 | 330 | MHz |
|VID| | Input differential voltage (absolute value)(8) | 100 | 400 | 600 | mV |
VCM | Common mode voltage(8) | | 1200 | | mV |
VLVDS | LVDS voltage(8) | 0 | | 2000 | mV |
tLVDS_RSTZ | Time required for LVDS receivers to recover from PWRDNZ | | | 10 | ns |
ZIN | Internal differential termination resistance | 95 | | 105 | Ω |
ZLINE | Line differential impedance (PWB/trace) | 85 | 90 | 95 | Ω |
ENVIRONMENTAL |
TARRAY | Array temperature, long-term
operational(9)(10)(11) | 10 | | 40 to 70(12) | °C |
Array temperature, short-term
operational(10)(13) | 0 | | 10 | °C |
TWINDOW | Window temperature (all part
numbers except *1280-6434B)(14)(15) | 10 | | 90 | °C |
Window temperature (part number 1280-6434B)(14) |
10 |
|
85 |
|
T|DELTA | | Absolute temperature delta between any point on the window edge and
the ceramic test point TP1(16) | | | 26 | °C |
TDP -AVG | Average dew point average
temperature (non-condensing)(17) | | | 28 | °C |
TDP-ELR | Elevated dew point temperature range (non-condensing)(18) | 28 | | 36 | °C |
CTELR | Cumulative time in elevated dew point temperature range | | | 24 | Months |
ILLUV | Illumination Wavelengths < 395 nm(9) | | 0.68 | 2.00 | mW/cm2 |
ILLVIS | Illumination Wavelengths between 395 nm and 800 nm | Thermally limited | mW/cm2 |
ILLIR | Illumination Wavelengths > 800 nm | | | 10 | mW/cm2 |
(1) All voltages are referenced to common ground VSS. VBIAS, VCC, VCCI, VOFFSET, and VRESET power supplies are all required for proper DMD operation. VSS must also be connected.
(2) VOFFSET supply transients must fall within specified max voltages.
(3) To prevent excess current, the supply voltage delta |V
CCI –
V
CC| must be less than the specified limit. See
Section 9,
Figure 9-1, and
Table 9-2.
(4) PWRDNZ input pin resets the SCP and disables the LVDS receivers. PWRDNZ input pin overrides SCPENZ input pin and tri-states the SCPDO output pin.
(5) The SCP clock is a gated clock. Duty cycle must be 50% ± 10%. SCP parameter is related to the frequency of DCLK.
(9) Simultaneous exposure of the DMD to the maximum
Section 6.4 for temperature and UV illumination will reduce device lifetime.
(10) The array temperature cannot be measured directly and must be computed
analytically from the temperature measured at test point 1 (TP1) shown in
Figure 7-1 and the package
thermal resistance using
Section 7.6.
(11) Long-term is defined as the usable life of the device.
(12) Per
Figure 6-1, the maximum operational array temperature should be derated based on the
micromirror landed duty cycle that the DMD experiences in the end application.
See
Section 7.7 for a definition of micromirror landed duty cycle.
(13) Array temperatures beyond those specified as long-term are recommended for short-term conditions only (power-up). Short-term is defined as cumulative time over the usable life of the device and is less than 500 hours.
(14) The locations of thermal test points TP2, TP3, TP4, and TP5 in
Figure 7-1 are intended to measure the highest window edge temperature. For most applications, the locations shown are representative of the highest window edge temperature. If a particular application causes additional points on the window edge to be at a higher temperature, test points should be added to those locations.
(15) The maximum marginal ray angle of the incoming illumination light at any point
in the micromirror array, including Pond of Micromirrors (POM), should not
exceed 55 degrees from the normal to the device array plane. The device window
aperture has not necessarily been designed to allow incoming light at higher
maximum angles to pass to the micromirrors, and the device performance has not
been tested nor qualified at angles exceeding this. Illumination light exceeding
this angle outside the micromirror array (including POM) will contribute to
thermal limitations described in this document, and may negatively affect
lifetime.
(16) Temperature delta is the highest difference between the ceramic test point 1 (TP1) and anywhere on the window edge as shown in
Figure 7-1. The window test points TP2, TP3, TP4, and TP5 shown in
Figure 7-1 are intended to result in the worst case delta temperature. If a particular application causes another point on the window edge to result in a larger delta temperature, that point should be used.
(17) The average over time (including storage and operating) that the device is not in the ‘elevated dew point temperature range'.
(18) Exposure to dew point temperatures in the elevated range during storage and operation should be limited to less than a total cumulative time of CTELR.