JAJSJF5B April   2021  – January 2023 DP83TC812R-Q1 , DP83TC812S-Q1

PRODUCTION DATA  

  1. 1 特長
  2. 2 アプリケーション
  3. 3 概要
  4. 4 Revision History
  5. 5 Device Comparison Table
  6. 6 Pin Configuration and Functions
  7. 7 Specifications
    1. 7.1 Absolute Maximum Ratings
    2. 7.2 ESD Ratings
    3. 7.3 Recommended Operating Conditions
    4. 7.4 Thermal Information
    5. 7.5 Electrical Characteristics
    6. 7.6 Timing Requirements
    7. 7.7 Timing Diagrams
    8. 7.8 Typical Characteristics
  8. 8 Detailed Description
    1. 8.1 Overview
    2. 8.2 Functional Block Diagram
    3. 8.3 Feature Description
      1. 8.3.1 Diagnostic Tool Kit
        1. 8.3.1.1 Signal Quality Indicator
        2. 8.3.1.2 Electrostatic Discharge Sensing
        3. 8.3.1.3 Time Domain Reflectometry
        4. 8.3.1.4 Voltage Sensing
        5. 8.3.1.5 BIST and Loopback Modes
          1. 8.3.1.5.1 Data Generator and Checker
          2. 8.3.1.5.2 xMII Loopback
          3. 8.3.1.5.3 PCS Loopback
          4. 8.3.1.5.4 Digital Loopback
          5. 8.3.1.5.5 Analog Loopback
          6. 8.3.1.5.6 Reverse Loopback
      2. 8.3.2 Compliance Test Modes
        1. 8.3.2.1 Test Mode 1
        2. 8.3.2.2 Test Mode 2
        3. 8.3.2.3 Test Mode 4
        4. 8.3.2.4 Test Mode 5
    4. 8.4 Device Functional Modes
      1. 8.4.1  Power Down
      2. 8.4.2  Reset
      3. 8.4.3  Standby
      4. 8.4.4  Normal
      5. 8.4.5  Sleep Ack
      6. 8.4.6  Sleep Request
      7. 8.4.7  Sleep Fail
      8. 8.4.8  Sleep
      9. 8.4.9  Wake-Up
      10. 8.4.10 TC10 System Example
      11. 8.4.11 Media Dependent Interface
        1. 8.4.11.1 100BASE-T1 Master and 100BASE-T1 Slave Configuration
        2. 8.4.11.2 Auto-Polarity Detection and Correction
        3. 8.4.11.3 Jabber Detection
        4. 8.4.11.4 Interleave Detection
      12. 8.4.12 MAC Interfaces
        1. 8.4.12.1 Media Independent Interface
        2. 8.4.12.2 Reduced Media Independent Interface
        3. 8.4.12.3 Reduced Gigabit Media Independent Interface
        4. 8.4.12.4 Serial Gigabit Media Independent Interface
      13. 8.4.13 Serial Management Interface
      14. 8.4.14 Direct Register Access
      15. 8.4.15 Extended Register Space Access
      16. 8.4.16 Write Address Operation
        1. 8.4.16.1 MMD1 - Write Address Operation
      17. 8.4.17 Read Address Operation
        1. 8.4.17.1 MMD1 - Read Address Operation
      18. 8.4.18 Write Operation (No Post Increment)
        1. 8.4.18.1 MMD1 - Write Operation (No Post Increment)
      19. 8.4.19 Read Operation (No Post Increment)
        1. 8.4.19.1 MMD1 - Read Operation (No Post Increment)
      20. 8.4.20 Write Operation (Post Increment)
        1. 8.4.20.1 MMD1 - Write Operation (Post Increment)
      21. 8.4.21 Read Operation (Post Increment)
        1. 8.4.21.1 MMD1 - Read Operation (Post Increment)
    5. 8.5 Programming
      1. 8.5.1 Strap Configuration
      2. 8.5.2 LED Configuration
      3. 8.5.3 PHY Address Configuration
    6. 8.6 Register Maps
      1. 8.6.1 Register Access Summary
      2. 8.6.2 DP83TC812 Registers
  9. 9 Application and Implementation
    1. 9.1 アプリケーション情報に関する免責事項
    2. 9.2 Application Information
    3. 9.3 Typical Applications
      1. 9.3.1 Design Requirements
        1. 9.3.1.1 Physical Medium Attachment
          1. 9.3.1.1.1 Common-Mode Choke Recommendations
      2. 9.3.2 Detailed Design Procedure
      3. 9.3.3 Application Curves
  10. 10Power Supply Recommendations
  11. 11Layout
    1. 11.1 Layout Guidelines
      1. 11.1.1 Signal Traces
      2. 11.1.2 Return Path
      3. 11.1.3 Metal Pour
      4. 11.1.4 PCB Layer Stacking
    2. 11.2 Layout Example
  12. 12Device and Documentation Support
    1. 12.1 Receiving Notification of Documentation Updates
    2. 12.2 サポート・リソース
    3. 12.3 Community Resources
    4. 12.4 Trademarks
    5. 12.5 静電気放電に関する注意事項
    6. 12.6 用語集
  13. 13Mechanical, Packaging, and Orderable Information

パッケージ・オプション

メカニカル・データ（パッケージ｜ピン）
サーマルパッド・メカニカル・データ
発注情報

7.2 ESD Ratings

VALUE UNIT
V(ESD) Electrostatic discharge Human body model (HBM), per AEC Q100-002(1) All pins ±2000 V
TRD_N, TRD_P pins ±8000
Charged device model (CDM), per AEC Q100-011 Corner pins ±750
Other pins ±750
IEC 61000-4-2 contact discharge TRD_N, TRD_P pins ±8000
(1) AEC Q100-002 indicates that HBM stressing shall be in accordance with the ANSI/ESDA/JEDEC JS-001 specification.