DRV5033-Q1デバイスはチョッパ安定化されたホール効果センサで、温度範囲全体にわたって優れた感度の安定性を持つ磁気感知ソリューションを提供し、保護機能が内蔵されています。
DRV5033-Q1は磁場方向の検出において、両方の極に対して同じように反応します。周囲の磁束密度がBOPスレッショルドを超えると、DRV5033-Q1のオープン・ドレイン出力がLOWに変化します。磁場がBRP未満に低下するまで出力はLOWに維持され、その後で出力がHIGHインピーダンスになります。出力電流シンクの容量は30mAです。2.7V~38Vまでの広い範囲の電圧で動作し、-22Vまでは逆極性保護されるため、広範な車載用アプリケーションに適したデバイスです。
逆電圧の状態、負荷ダンプ、および出力短絡や過電流に対して、内部的な保護機能が搭載されています。
型番 | パッケージ | 本体サイズ(公称) |
---|---|---|
DRV5033-Q1 | SOT-23 (3) | 2.92mm×1.30mm |
TO-92 (3) | 4.00mm×3.15mm |
Changes from D Revision (May 2016) to E Revision
Changes from C Revision (February 2016) to D Revision
Changes from B Revision (December 2015) to C Revision
Changes from A Revision (May 2015) to B Revision
Changes from * Revision (December 2014) to A Revision
For additional configuration information, see デバイスのマーキング and メカニカル、パッケージ、および注文情報.
PIN | TYPE | DESCRIPTION | ||
---|---|---|---|---|
NAME | DBZ | LPG | ||
GND | 3 | 2 | GND | Ground pin |
OUT | 2 | 3 | Output | Hall sensor open-drain output. The open drain requires a resistor pullup. |
VCC | 1 | 1 | PWR | 2.7 to 38 V power supply. Bypass this pin to the GND pin with a 0.01-µF (minimum) ceramic capacitor rated for VCC. |
MIN | MAX | UNIT | ||
---|---|---|---|---|
Power supply voltage | VCC | –22(2) | 40 | V |
Voltage ramp rate (VCC), VCC < 5 V | Unlimited | V/µs | ||
Voltage ramp rate (VCC), VCC > 5 V | 0 | 2 | ||
Output pin voltage | –0.5 | 40 | V | |
Output pin reverse current during reverse supply condition | 0 | 100 | mA | |
Magnetic flux density, BMAX | Unlimited | |||
Operating junction temperature, TJ | Q, see Figure 23 | –40 | 150 | °C |
E, see Figure 23 | –40 | 17 | ||
Storage temperature, Tstg | –65 | 150 | °C |
VALUE | UNIT | ||||
---|---|---|---|---|---|
V(ESD) | Electrostatic discharge | Human-body model (HBM), per AEC Q100-002(1) | ±2500 | V | |
Charged-device model (CDM), per AEC Q100-011 | ±500 |
MIN | MAX | UNIT | |||
---|---|---|---|---|---|
VCC | Power supply voltage | 2.7 | 38 | V | |
VO | Output pin voltage (OUT) | 0 | 38 | V | |
ISINK | Output pin current sink (OUT)(1) | 0 | 30 | mA | |
TA | Operating ambient temperature | Q, see Figure 23 | –40 | 125 | °C |
E, see Figure 23 | –40 | 150 |
THERMAL METRIC(1) | DRV5033-Q1 | UNIT | ||
---|---|---|---|---|
DBZ (SOT-23) | LPG (TO-92) | |||
3 PINS | 3 PINS | |||
RθJA | Junction-to-ambient thermal resistance | 333.2 | 180 | °C/W |
RθJC(top) | Junction-to-case (top) thermal resistance | 99.9 | 98.6 | °C/W |
RθJB | Junction-to-board thermal resistance | 66.9 | 154.9 | °C/W |
ψJT | Junction-to-top characterization parameter | 4.9 | 40 | °C/W |
ψJB | Junction-to-board characterization parameter | 65.2 | 154.9 | °C/W |
PARAMETER | TEST CONDITIONS | MIN | TYP | MAX | UNIT | |
---|---|---|---|---|---|---|
POWER SUPPLIES (VCC) | ||||||
VCC | VCC operating voltage | 2.7 | 38 | V | ||
ICC | Operating supply current | VCC = 2.7 to 38 V, TA = 25°C | 2.7 | mA | ||
VCC = 2.7 to 38 V, TA = TA, MAX(1) | 3 | 3.6 | ||||
ton | Power-on time | AJ version | 35 | 50 | µs | |
FA version | 35 | 70 | ||||
OPEN DRAIN OUTPUT (OUT) | ||||||
rDS(on) | FET on-resistance | VCC = 3.3 V, IO = 10 mA, TA = 25°C | 22 | Ω | ||
VCC = 3.3 V, IO = 10 mA, TA = 125°C | 36 | 50 | ||||
Ilkg(off) | Off-state leakage current | Output Hi-Z | 1 | µA | ||
PROTECTION CIRCUITS | ||||||
VCCR | Reverse supply voltage | –22 | V | |||
IOCP | Overcurrent protection level | OUT shorted VCC | 15 | 30 | 45 | mA |
PARAMETER | TEST CONDITIONS | MIN | TYP | MAX | UNIT | |
---|---|---|---|---|---|---|
OPEN DRAIN OUTPUT (OUT) | ||||||
td | Output delay time | B = BRP – 10 mT to BOP + 10 mT in 1 µs | 13 | 25 | µs | |
tr | Output rise time (10% to 90%) | R1 = 1 kΩ, CO = 50 pF, VCC = 3.3 V | 200 | ns | ||
tf | Output fall time (90% to 10%) | R1 = 1 kΩ, CO = 50 pF, VCC = 3.3 V | 31 | ns |
PARAMETER | TEST CONDITIONS | MIN | TYP | MAX | UNIT(1) | |
---|---|---|---|---|---|---|
ƒBW | Bandwidth(2) | 20 | 30 | kHz | ||
DRV5033FA: ±3.5 / ±2 mT | ||||||
BOP | Operate point; see Figure 12 | ±1.8 | ±3.5 | ±6.8 | mT | |
BRP | Release point; see Figure 12 | ±0.5 | ±2 | ±4.2 | mT | |
Bhys | Hysteresis; Bhys = (BOP – BRP)(3) | ±1.5 | mT | |||
BO | Magnetic offset; BO = (BOP + BRP) / 2 | ±2.8 | mT | |||
DRV5033AJ: ±6.9 / ±3.5 mT | ||||||
BOP | Operate point; see Figure 12 | ±3 | ±6.9 | ±12 | mT | |
BRP | Release point; see Figure 12 | ±1 | ±3.5 | ±5 | mT | |
Bhys | Hysteresis; Bhys = (BOP – BRP)(3) | 3.4 | mT | |||
BO | Magnetic offset; BO = (BOP + BRP) / 2 | 5.2 | mT |
TA = 25°C | ||
TA = 25°C |
TA = 25°C |
TA = 25°C |
VCC = 3.3 V | ||
VCC = 3.3 V |
VCC = 3.3 V |
VCC = 3.3 V |