JAJSQT9A November   2023  – March 2024 DRV8242-Q1

PRODUCTION DATA  

  1.   1
  2. 1 特長
  3. 2 アプリケーション
  4. 3 概要
  5. 4 Device Comparison
  6. 5 Pin Configuration and Functions
    1. 5.1 HW Variant
      1. 5.1.1 VQFN (20) package
    2. 5.2 SPI Variant
      1. 5.2.1 VQFN (20) package
      2. 5.2.2 VQFN (20) package
  7. 6 Specifications
    1. 6.1  Absolute Maximum Ratings
    2. 6.2  ESD Ratings
    3. 6.3  Recommended Operating Conditions
    4. 6.4  Thermal Information VQFN-RHL package
    5. 6.5  Electrical Characteristics
    6. 6.6  Transient Thermal Impedance & Current Capability
    7. 6.7  SPI Timing Requirements
    8. 6.8  Switching Waveforms
      1. 6.8.1 Output switching transients
        1. 6.8.1.1 High-Side Recirculation
    9. 6.9  Wake-up Transients
      1. 6.9.1 HW Variant
      2. 6.9.2 SPI Variant
    10. 6.10 Fault Reaction Transients
      1. 6.10.1 Retry setting
      2. 6.10.2 Latch setting
    11. 6.11 Typical Characteristics
  8. 7 Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
      1. 7.2.1 HW Variant
      2. 7.2.2 SPI Variant
    3. 7.3 Feature Description
      1. 7.3.1 External Components
        1. 7.3.1.1 HW Variant
        2. 7.3.1.2 SPI Variant
      2. 7.3.2 Bridge Control
        1. 7.3.2.1 PH/EN mode
        2. 7.3.2.2 PWM mode
        3. 7.3.2.3 Register - Pin Control - SPI Variant Only
      3. 7.3.3 Device Configuration
        1. 7.3.3.1 Slew Rate (SR)
        2. 7.3.3.2 IPROPI
        3. 7.3.3.3 ITRIP Regulation
        4. 7.3.3.4 DIAG
          1. 7.3.3.4.1 HW variant
          2. 7.3.3.4.2 SPI variant
      4. 7.3.4 Protection and Diagnostics
        1. 7.3.4.1 Over Current Protection (OCP)
        2. 7.3.4.2 Over Temperature Protection (TSD)
        3. 7.3.4.3 Off-State Diagnostics (OLP)
        4. 7.3.4.4 On-State Diagnostics (OLA) - SPI Variant Only
        5. 7.3.4.5 VM Over Voltage Monitor
        6. 7.3.4.6 VM Under Voltage Monitor
        7. 7.3.4.7 Power On Reset (POR)
        8. 7.3.4.8 Event Priority
    4. 7.4 Device Functional States
      1. 7.4.1 SLEEP State
      2. 7.4.2 STANDBY State
      3. 7.4.3 Wake-up to STANDBY State
      4. 7.4.4 ACTIVE State
      5. 7.4.5 nSLEEP Reset Pulse (HW Variant, LATCHED setting Only)
    5. 7.5 Programming - SPI Variant Only
      1. 7.5.1 SPI Interface
      2. 7.5.2 Standard Frame
      3. 7.5.3 SPI Interface for Multiple Peripherals
        1. 7.5.3.1 Daisy Chain Frame for Multiple Peripherals
  9. 8 Register Map - SPI Variant Only
    1. 8.1 User Registers
  10. 9 Application and Implementation
    1. 9.1 Application Information
      1. 9.1.1 Load Summary
    2. 9.2 Typical Application
      1. 9.2.1 HW Variant
      2. 9.2.2 SPI Variant
    3. 9.3 Power Supply Recommendations
      1. 9.3.1 Bulk Capacitance Sizing
    4. 9.4 Layout
      1. 9.4.1 Layout Guidelines
      2. 9.4.2 Layout Example
  11. 10Device and Documentation Support
    1. 10.1 Documentation Support
      1. 10.1.1 Related Documentation
    2. 10.2 Receiving Notification of Documentation Updates
    3. 10.3 Community Resources
    4. 10.4 Trademarks
  12. 11Revision History
  13. 12Mechanical, Packaging, and Orderable Information

パッケージ・オプション

メカニカル・データ（パッケージ｜ピン）
サーマルパッド・メカニカル・データ
発注情報

6.3 Recommended Operating Conditions

over operating temperature range (unless otherwise noted)
MIN NOM MAX UNIT
VVM Power supply voltage VM 4.5 13.5 35(1) V
VVDD Logic supply voltage (SPI P Variant only) VDD 4.5 5.5 V
VSLEEP SLEEP function pin (HW & SPI S Variant only) nSLEEP 0 5.5 V
VLOGIC Controller pins voltage EN/IN1, PH/EN2, DRVOFF, nFAULT 0 5.5 V
VSPI_IOS SPI (S) variant - SPI pin voltage SDI, SDO, nSCS, SCLK 0 VnSLEEP + 0.5 V
VSPI_IOS SPI (P) variant - SPI pin voltage SDI, SDO, nSCS, SCLK 0 VVDD + 0.5 V
VCONFIG HW variant - Configuration pin voltage MODE, ITRIP, SR, DIAG 0 5.5 V
VIPROPI Analog feedback voltage IPROPI 0 5.5 V
fPWM PWM frequency EN/IN1, PH/EN2 25 kHz
TA Operating ambient temperature –40 125 °C
TJ Operating junction temperature –40 150 °C
(1) The over current protection function does not support short on OUTx to VM or GND above 28 V for short inductance < 1 μH.