JAJSHP7D May   2015  – July 2019 DRV8305-Q1

PRODUCTION DATA.  

  1. 特長
  2. アプリケーション
  3. 概要
    1.     Device Images
      1.      概略回路図
  4. 改訂履歴
  5. 概要(続き)
  6. Pin Configuration and Functions
    1.     Pin Functions
  7. Specifications
    1. 7.1 Absolute Maximum Ratings
    2. 7.2 ESD Ratings
    3. 7.3 Recommended Operating Conditions
    4. 7.4 Thermal Information
    5. 7.5 Electrical Characteristics
    6. 7.6 SPI Timing Requirements (Slave Mode Only)
    7. 7.7 Typical Characteristics
  8. Detailed Description
    1. 8.1 Overview
    2. 8.2 Functional Block Diagram
    3. 8.3 Feature Description
      1. 8.3.1 Integrated Three-Phase Gate Driver
      2. 8.3.2 INHx/INLx: Gate Driver Input Modes
      3. 8.3.3 VCPH Charge Pump: High-Side Gate Supply
      4. 8.3.4 VCP_LSD LDO: Low-Side Gate Supply
      5. 8.3.5 GHx/GLx: Half-Bridge Gate Drivers
        1. 8.3.5.1 Smart Gate Drive Architecture: IDRIVE
        2. 8.3.5.2 Smart Gate Drive Architecture: TDRIVE
        3. 8.3.5.3 CSAs: Current Shunt Amplifiers
      6. 8.3.6 DVDD and AVDD: Internal Voltage Regulators
      7. 8.3.7 VREG: Voltage Regulator Output
      8. 8.3.8 Protection Features
        1. 8.3.8.1 Fault and Warning Classification
        2. 8.3.8.2 MOSFET Shoot-Through Protection (TDRIVE)
        3. 8.3.8.3 MOSFET Overcurrent Protection (VDS_OCP)
          1. 8.3.8.3.1 MOSFET dV/dt Turn On Protection (TDRIVE)
          2. 8.3.8.3.2 MOSFET Gate Drive Protection (GDF)
        4. 8.3.8.4 Low-Side Source Monitors (SNS_OCP)
        5. 8.3.8.5 Fault and Warning Operating Modes
      9. 8.3.9 Undervoltage Warning (UVFL), Undervoltage Lockout (UVLO), and Overvoltage (OV) Protection
        1. 8.3.9.1 Overtemperature Warning (OTW) and Shutdown (OTSD) Protection
        2. 8.3.9.2 Reverse Supply Protection
        3. 8.3.9.3 MCU Watchdog
        4. 8.3.9.4 VREG Undervoltage (VREG_UV)
        5. 8.3.9.5 Latched Fault Reset Methods
    4. 8.4 Device Functional Modes
      1. 8.4.1 Power Up Sequence
      2. 8.4.2 Standby State
      3. 8.4.3 Operating State
      4. 8.4.4 Sleep State
      5. 8.4.5 Limp Home or Fail Code Operation
    5. 8.5 Programming
      1. 8.5.1 SPI Communication
        1. 8.5.1.1 SPI
        2. 8.5.1.2 SPI Format
    6. 8.6 Register Maps
      1. 8.6.1 Status Registers
        1. 8.6.1.1 Warning and Watchdog Reset (Address = 0x1)
          1. Table 10. Warning and Watchdog Reset Register Description
        2. 8.6.1.2 OV/VDS Faults (Address = 0x2)
          1. Table 11. OV/VDS Faults Register Description
        3. 8.6.1.3 IC Faults (Address = 0x3)
          1. Table 12. IC Faults Register Description
        4. 8.6.1.4 VGS Faults (Address = 0x4)
          1. Table 13. Gate Driver VGS Faults Register Description
      2. 8.6.2 Control Registers
        1. 8.6.2.1 HS Gate Drive Control (Address = 0x5)
          1. Table 14. HS Gate Driver Control Register Description
        2. 8.6.2.2 LS Gate Drive Control (Address = 0x6)
          1. Table 15. LS Gate Driver Control Register Description
        3. 8.6.2.3 Gate Drive Control (Address = 0x7)
          1. Table 16. Gate Drive Control Register Description
        4. 8.6.2.4 IC Operation (Address = 0x9)
          1. Table 17. IC Operation Register Description
        5. 8.6.2.5 Shunt Amplifier Control (Address = 0xA)
          1. Table 18. Shunt Amplifier Control Register Description
        6. 8.6.2.6 Voltage Regulator Control (Address = 0xB)
          1. Table 19. Voltage Regulator Control Register Description
        7. 8.6.2.7 VDS Sense Control (Address = 0xC)
          1. Table 20. VDS Sense Control Register Description
  9. Application and Implementation
    1. 9.1 Application Information
    2. 9.2 Typical Application
      1. 9.2.1 Design Requirements
      2. 9.2.2 Detailed Design Procedure
        1. 9.2.2.1 Gate Drive Average Current
        2. 9.2.2.2 MOSFET Slew Rates
        3. 9.2.2.3 Overcurrent Protection
        4. 9.2.2.4 Current Sense Amplifiers
      3. 9.2.3 VREG Reference Voltage Input (DRV8305N)
      4. 9.2.4 Application Curves
  10. 10Power Supply Recommendations
    1. 10.1 Power Supply Consideration in Generator Mode
    2. 10.2 Bulk Capacitance
  11. 11Layout
    1. 11.1 Layout Guidelines
    2. 11.2 Layout Example
  12. 12デバイスおよびドキュメントのサポート
    1. 12.1 ドキュメントのサポート
    2. 12.2 ドキュメントの更新通知を受け取る方法
    3. 12.3 コミュニティ・リソース
    4. 12.4 商標
    5. 12.5 静電気放電に関する注意事項
    6. 12.6 Glossary
  13. 13メカニカル、パッケージ、および注文情報

パッケージ・オプション

メカニカル・データ(パッケージ|ピン)
サーマルパッド・メカニカル・データ
発注情報

Overview

The DRV8305-Q1 is a 4.4-V to 45-V automotive gate driver IC for three-phase motor driver applications. This device reduces external component count in the system by integrating three half-bridge drivers, charge pump, three current shunt amplifiers, an uncommited 3.3-V or 5-V, 50-mA LDO, and a variety of protection circuits. The DRV8305-Q1 provides overcurrent, shoot-through, overtemperature, overvoltage, and undervoltage protection. Fault conditions are indicated by the nFAULT pin and specific fault information can be read back from the SPI registers. The protection circuits are highly configurable to allow adaptation to different applications and support limp home operation.

The gate driver uses a tripler charge pump to generate the appropriate gate-to-source voltage bias for the external, high-side N-channel power MOSFETs during low supply conditions. A regulated 10-V LDO derived from the charge pump supplies the gate-to-source voltage bias for the low-side N-channel MOSFET. The high-side and low-side peak gate drive currents are adjustable through the SPI registers to finely tune the switching of the external MOSFETs without the need for external components. An internal handshaking scheme is used to prevent shoot-through and minimize the dead time when transitioning between MOSFETs in each half-bridge. Multiple input methods are provided to accommodate different control schemes including a 1-PWM mode which integrates a six-step block commutation table for BLDC motor control.

VDS sensing of the external power MOSFETs allows for the DRV8305-Q1 to detect overcurrent conditions and respond appropriately. Integrated blanking and deglitch timers are provided to prevent false trips related to switching or transient noise. Individual MOSFET overcurrent conditions are reported through the SPI status registers and nFAULT pin. A dedicated VDRAIN pin is provided to accurately sense the drain voltage of the high-side MOSFET.

The three internal current shunt amplifiers allow for the implementation of common motor control schemes that require sensing of the half-bridge currents through a low-side current shunt resistor. The amplifier gain, reference voltage, and blanking are adjustable through the SPI registers. A calibration method is providing to minimize inaccuracy related to offset voltage.

Three versions of the DRV8305-Q1 are available with separate part numbers for the different devices options:

  • DRV8305NQ: VREG pin has the internal LDO disabled and is only used as a voltage reference input for the amplifiers and SDO pullup. Grade 1.
  • DRV83053Q: VREG is a 3.3-V, 50-mA LDO output pin. Grade 1.
  • DRV83055Q: VREG is a 5-V, 50-mA LDO output pin. Grade 1.
  • DRV8305NE: VREG pin has the internal LDO disabled and is only used as a voltage reference input for the amplifiers and SDO pullup. Grade 0.