JAJSHP7D May   2015  – July 2019 DRV8305-Q1

PRODUCTION DATA.  

  1. 1 特長
  2. 2 アプリケーション
  3. 3 概要
    1.     Device Images
      1.      概略回路図
  4. 4 改訂履歴
  5. 5 概要（続き）
  6. 6 Pin Configuration and Functions
    1.     Pin Functions
  7. 7 Specifications
    1. 7.1 Absolute Maximum Ratings
    2. 7.2 ESD Ratings
    3. 7.3 Recommended Operating Conditions
    4. 7.4 Thermal Information
    5. 7.5 Electrical Characteristics
    6. 7.6 SPI Timing Requirements (Slave Mode Only)
    7. 7.7 Typical Characteristics
  8. 8 Detailed Description
    1. 8.1 Overview
    2. 8.2 Functional Block Diagram
    3. 8.3 Feature Description
      1. 8.3.1 Integrated Three-Phase Gate Driver
      2. 8.3.2 INHx/INLx: Gate Driver Input Modes
      3. 8.3.3 VCPH Charge Pump: High-Side Gate Supply
      4. 8.3.4 VCP_LSD LDO: Low-Side Gate Supply
      5. 8.3.5 GHx/GLx: Half-Bridge Gate Drivers
        1. 8.3.5.1 Smart Gate Drive Architecture: IDRIVE
        2. 8.3.5.2 Smart Gate Drive Architecture: TDRIVE
        3. 8.3.5.3 CSAs: Current Shunt Amplifiers
      6. 8.3.6 DVDD and AVDD: Internal Voltage Regulators
      7. 8.3.7 VREG: Voltage Regulator Output
      8. 8.3.8 Protection Features
        1. 8.3.8.1 Fault and Warning Classification
        2. 8.3.8.2 MOSFET Shoot-Through Protection (TDRIVE)
        3. 8.3.8.3 MOSFET Overcurrent Protection (VDS_OCP)
          1. 8.3.8.3.1 MOSFET dV/dt Turn On Protection (TDRIVE)
          2. 8.3.8.3.2 MOSFET Gate Drive Protection (GDF)
        4. 8.3.8.4 Low-Side Source Monitors (SNS_OCP)
        5. 8.3.8.5 Fault and Warning Operating Modes
      9. 8.3.9 Undervoltage Warning (UVFL), Undervoltage Lockout (UVLO), and Overvoltage (OV) Protection
        1. 8.3.9.1 Overtemperature Warning (OTW) and Shutdown (OTSD) Protection
        2. 8.3.9.2 Reverse Supply Protection
        3. 8.3.9.3 MCU Watchdog
        4. 8.3.9.4 VREG Undervoltage (VREG_UV)
        5. 8.3.9.5 Latched Fault Reset Methods
    4. 8.4 Device Functional Modes
      1. 8.4.1 Power Up Sequence
      2. 8.4.2 Standby State
      3. 8.4.3 Operating State
      4. 8.4.4 Sleep State
      5. 8.4.5 Limp Home or Fail Code Operation
    5. 8.5 Programming
      1. 8.5.1 SPI Communication
        1. 8.5.1.1 SPI
        2. 8.5.1.2 SPI Format
    6. 8.6 Register Maps
      1. 8.6.1 Status Registers
        1. 8.6.1.1 Warning and Watchdog Reset (Address = 0x1)
          1. Table 10. Warning and Watchdog Reset Register Description
        2. 8.6.1.2 OV/VDS Faults (Address = 0x2)
          1. Table 11. OV/VDS Faults Register Description
        3. 8.6.1.3 IC Faults (Address = 0x3)
          1. Table 12. IC Faults Register Description
        4. 8.6.1.4 VGS Faults (Address = 0x4)
          1. Table 13. Gate Driver VGS Faults Register Description
      2. 8.6.2 Control Registers
        1. 8.6.2.1 HS Gate Drive Control (Address = 0x5)
          1. Table 14. HS Gate Driver Control Register Description
        2. 8.6.2.2 LS Gate Drive Control (Address = 0x6)
          1. Table 15. LS Gate Driver Control Register Description
        3. 8.6.2.3 Gate Drive Control (Address = 0x7)
          1. Table 16. Gate Drive Control Register Description
        4. 8.6.2.4 IC Operation (Address = 0x9)
          1. Table 17. IC Operation Register Description
        5. 8.6.2.5 Shunt Amplifier Control (Address = 0xA)
          1. Table 18. Shunt Amplifier Control Register Description
        6. 8.6.2.6 Voltage Regulator Control (Address = 0xB)
          1. Table 19. Voltage Regulator Control Register Description
        7. 8.6.2.7 VDS Sense Control (Address = 0xC)
          1. Table 20. VDS Sense Control Register Description
  9. 9 Application and Implementation
    1. 9.1 Application Information
    2. 9.2 Typical Application
      1. 9.2.1 Design Requirements
      2. 9.2.2 Detailed Design Procedure
        1. 9.2.2.1 Gate Drive Average Current
        2. 9.2.2.2 MOSFET Slew Rates
        3. 9.2.2.3 Overcurrent Protection
        4. 9.2.2.4 Current Sense Amplifiers
      3. 9.2.3 VREG Reference Voltage Input (DRV8305N)
      4. 9.2.4 Application Curves
  10. 10Power Supply Recommendations
    1. 10.1 Power Supply Consideration in Generator Mode
    2. 10.2 Bulk Capacitance
  11. 11Layout
    1. 11.1 Layout Guidelines
    2. 11.2 Layout Example
  12. 12デバイスおよびドキュメントのサポート
    1. 12.1 ドキュメントのサポート
    2. 12.2 ドキュメントの更新通知を受け取る方法
    3. 12.3 コミュニティ・リソース
    4. 12.4 商標
    5. 12.5 静電気放電に関する注意事項
    6. 12.6 Glossary
  13. 13メカニカル、パッケージ、および注文情報

パッケージ・オプション

メカニカル・データ（パッケージ｜ピン）
サーマルパッド・メカニカル・データ
発注情報

8.3.3 VCPH Charge Pump: High-Side Gate Supply

The DRV8305-Q1 uses a charge pump to generate the proper gate-to-source voltage bias for the high-side N-channel MOSFETs. Similar to the often used bootstrap architecture, the charge pump generates a floating supply voltage used to enable the MOSFET. When enabled, the gate of the external MOSFET is connected to VCPH through the internal gate drivers. The charge pump of the DRV8305-Q1 regulates the VCPH supply to PVDD + 10-V in order to support both standard and logic level MOSFETs. As opposed to a bootstrap architecture, the charge pump supports 0 to 100% duty cycle operation by eliminating the need to refresh the bootstrap capacitor. The charge pump also removes the need for bootstrap capacitors to be connected to the switch-node of the half-bridge.

In order to support automotive cold crank transients on the battery which require the system to be operational to as low as 4.4 V, a regulated triple charge pump scheme is used to create sufficient VGS to drive standard and logic level MOSFETs during the low voltage transient. Between 4.4 to 18 V the charge pump regulates the voltage in a tripler mode. Beyond 18 V and until the max operating voltage, it switches over to a doubler mode in order to improve efficiency. The charge pump is disabled until EN_GATE is set high to reduce unneeded power consumption by the IC. After EN_GATE is set high, the device will go through a power up sequence to enable the gate drivers and gate drive supplies. 1 ms should be allocated after EN_GATE is set high to allow the charge pump to reach its regulation voltage.

The charge pump is continuously monitored for undervoltage and overvoltage conditions to prevent underdriven or overdriven MOSFET scenarios. If an undervoltage or overvoltage condition is detected the appropriate actions is taken and reported through the SPI registers.