JAJSHP7D May   2015  – July 2019 DRV8305-Q1

PRODUCTION DATA.  

  1. 1 特長
  2. 2 アプリケーション
  3. 3 概要
    1.     Device Images
      1.      概略回路図
  4. 4 改訂履歴
  5. 5 概要（続き）
  6. 6 Pin Configuration and Functions
    1.     Pin Functions
  7. 7 Specifications
    1. 7.1 Absolute Maximum Ratings
    2. 7.2 ESD Ratings
    3. 7.3 Recommended Operating Conditions
    4. 7.4 Thermal Information
    5. 7.5 Electrical Characteristics
    6. 7.6 SPI Timing Requirements (Slave Mode Only)
    7. 7.7 Typical Characteristics
  8. 8 Detailed Description
    1. 8.1 Overview
    2. 8.2 Functional Block Diagram
    3. 8.3 Feature Description
      1. 8.3.1 Integrated Three-Phase Gate Driver
      2. 8.3.2 INHx/INLx: Gate Driver Input Modes
      3. 8.3.3 VCPH Charge Pump: High-Side Gate Supply
      4. 8.3.4 VCP_LSD LDO: Low-Side Gate Supply
      5. 8.3.5 GHx/GLx: Half-Bridge Gate Drivers
        1. 8.3.5.1 Smart Gate Drive Architecture: IDRIVE
        2. 8.3.5.2 Smart Gate Drive Architecture: TDRIVE
        3. 8.3.5.3 CSAs: Current Shunt Amplifiers
      6. 8.3.6 DVDD and AVDD: Internal Voltage Regulators
      7. 8.3.7 VREG: Voltage Regulator Output
      8. 8.3.8 Protection Features
        1. 8.3.8.1 Fault and Warning Classification
        2. 8.3.8.2 MOSFET Shoot-Through Protection (TDRIVE)
        3. 8.3.8.3 MOSFET Overcurrent Protection (VDS_OCP)
          1. 8.3.8.3.1 MOSFET dV/dt Turn On Protection (TDRIVE)
          2. 8.3.8.3.2 MOSFET Gate Drive Protection (GDF)
        4. 8.3.8.4 Low-Side Source Monitors (SNS_OCP)
        5. 8.3.8.5 Fault and Warning Operating Modes
      9. 8.3.9 Undervoltage Warning (UVFL), Undervoltage Lockout (UVLO), and Overvoltage (OV) Protection
        1. 8.3.9.1 Overtemperature Warning (OTW) and Shutdown (OTSD) Protection
        2. 8.3.9.2 Reverse Supply Protection
        3. 8.3.9.3 MCU Watchdog
        4. 8.3.9.4 VREG Undervoltage (VREG_UV)
        5. 8.3.9.5 Latched Fault Reset Methods
    4. 8.4 Device Functional Modes
      1. 8.4.1 Power Up Sequence
      2. 8.4.2 Standby State
      3. 8.4.3 Operating State
      4. 8.4.4 Sleep State
      5. 8.4.5 Limp Home or Fail Code Operation
    5. 8.5 Programming
      1. 8.5.1 SPI Communication
        1. 8.5.1.1 SPI
        2. 8.5.1.2 SPI Format
    6. 8.6 Register Maps
      1. 8.6.1 Status Registers
        1. 8.6.1.1 Warning and Watchdog Reset (Address = 0x1)
          1. Table 10. Warning and Watchdog Reset Register Description
        2. 8.6.1.2 OV/VDS Faults (Address = 0x2)
          1. Table 11. OV/VDS Faults Register Description
        3. 8.6.1.3 IC Faults (Address = 0x3)
          1. Table 12. IC Faults Register Description
        4. 8.6.1.4 VGS Faults (Address = 0x4)
          1. Table 13. Gate Driver VGS Faults Register Description
      2. 8.6.2 Control Registers
        1. 8.6.2.1 HS Gate Drive Control (Address = 0x5)
          1. Table 14. HS Gate Driver Control Register Description
        2. 8.6.2.2 LS Gate Drive Control (Address = 0x6)
          1. Table 15. LS Gate Driver Control Register Description
        3. 8.6.2.3 Gate Drive Control (Address = 0x7)
          1. Table 16. Gate Drive Control Register Description
        4. 8.6.2.4 IC Operation (Address = 0x9)
          1. Table 17. IC Operation Register Description
        5. 8.6.2.5 Shunt Amplifier Control (Address = 0xA)
          1. Table 18. Shunt Amplifier Control Register Description
        6. 8.6.2.6 Voltage Regulator Control (Address = 0xB)
          1. Table 19. Voltage Regulator Control Register Description
        7. 8.6.2.7 VDS Sense Control (Address = 0xC)
          1. Table 20. VDS Sense Control Register Description
  9. 9 Application and Implementation
    1. 9.1 Application Information
    2. 9.2 Typical Application
      1. 9.2.1 Design Requirements
      2. 9.2.2 Detailed Design Procedure
        1. 9.2.2.1 Gate Drive Average Current
        2. 9.2.2.2 MOSFET Slew Rates
        3. 9.2.2.3 Overcurrent Protection
        4. 9.2.2.4 Current Sense Amplifiers
      3. 9.2.3 VREG Reference Voltage Input (DRV8305N)
      4. 9.2.4 Application Curves
  10. 10Power Supply Recommendations
    1. 10.1 Power Supply Consideration in Generator Mode
    2. 10.2 Bulk Capacitance
  11. 11Layout
    1. 11.1 Layout Guidelines
    2. 11.2 Layout Example
  12. 12デバイスおよびドキュメントのサポート
    1. 12.1 ドキュメントのサポート
    2. 12.2 ドキュメントの更新通知を受け取る方法
    3. 12.3 コミュニティ・リソース
    4. 12.4 商標
    5. 12.5 静電気放電に関する注意事項
    6. 12.6 Glossary
  13. 13メカニカル、パッケージ、および注文情報

パッケージ・オプション

メカニカル・データ（パッケージ｜ピン）
サーマルパッド・メカニカル・データ
発注情報

9.2.2.2 MOSFET Slew Rates

The rise and fall times of the external power MOSFET can be adjusted through the use of the DRV8305-Q1 IDRIVE setting. A higher IDRIVE setting will charge the MOSFET gate more rapidly where a lower IDRIVE setting will charge the MOSFET gate more slowly. System testing requires fine tuning to the desired slew rate, but a rough first-order approximation can be calculated as shown in the following.

Equation 3. MOSFET Slew Rate = MOSFET QGD / IDRIVE Setting

Example: 9 nC (QGD) / 50 mA (IDRIVEP) = 180 ns