JAJSHP7D May 2015 – July 2019 DRV8305-Q1
PRODUCTION DATA.
The DRV8305-Q1 provides overcurrent protection for the external power MOSFETs through the use of VDS monitors for both the high-side and low-side MOSFETs. These are intended for protecting the MOSFET in overcurrent conditions and are not for precise current regulation.
The overcurrent protection works by monitoring the VDS voltage drop of the external MOSFETs and comparing it against the internal VDS_LEVEL set through the SPI registers. The high-side VDS is measured across the VDRAIN and SH_X pins. The low-side VDS is measured across the SH_X and SL_X pins. If the VDS voltage exceeds the VDS_LEVEL value, the DRV8305-Q1 will take action according to the VDS_MODE register.
The overcurrent trip level can be determined with the MOSFET RDS(on) and the VDS_LEVEL setting.
Example: 0.197 V (VDS_LVL) / 4.1 mΩ (RDS(ON)) = 48 A