JAJSF51A April   2018  – July 2018 DRV8306

PRODUCTION DATA.  

  1. 1 特長
  2. 2 アプリケーション
  3. 3 概要
    1.     概略回路図
  4. 4 改訂履歴
  5. 5 概要（続き）
  6. 6 Pin Configuration and Functions
    1.     Pin Functions
  7. 7 Specifications
    1. 7.1 Absolute Maximum Ratings
    2. 7.2 ESD Ratings
    3. 7.3 Recommended Operating Conditions
    4. 7.4 Thermal Information
    5. 7.5 Electrical Characteristics
    6. 7.6 Typical Characteristics
  8. 8 Detailed Description
    1. 8.1 Overview
    2. 8.2 Functional Block Diagram
    3. 8.3 Feature Description
      1. 8.3.1 Three Phase Smart Gate Drivers
        1. 8.3.1.1 PWM Control Mode (1x PWM Mode)
        2. 8.3.1.2 Hardware Interface Mode
        3. 8.3.1.3 Gate Driver Voltage Supplies
        4. 8.3.1.4 Smart Gate Drive Architecture
          1. 8.3.1.4.1 IDRIVE: MOSFET Slew-Rate Control
          2. 8.3.1.4.2 TDRIVE: MOSFET Gate Drive Control
          3. 8.3.1.4.3 Gate Drive Clamp
          4. 8.3.1.4.4 Propagation Delay
          5. 8.3.1.4.5 MOSFET VDS Monitors
          6. 8.3.1.4.6 VDRAIN Sense Pin
      2. 8.3.2 DVDD Linear Voltage Regulator
      3. 8.3.3 Pulse-by-Pulse Current Limit
      4. 8.3.4 Hall Comparators
      5. 8.3.5 FGOUT Signal
      6. 8.3.6 Pin Diagrams
      7. 8.3.7 Gate-Driver Protective Circuits
        1. 8.3.7.1 VM Supply Undervoltage Lockout (UVLO)
        2. 8.3.7.2 VCP Charge-Pump Undervoltage Lockout (CPUV)
        3. 8.3.7.3 MOSFET VDS Overcurrent Protection (VDS_OCP)
        4. 8.3.7.4 VSENSE Overcurrent Protection (SEN_OCP)
        5. 8.3.7.5 Gate Driver Fault (GDF)
        6. 8.3.7.6 Thermal Shutdown (OTSD)
    4. 8.4 Device Functional Modes
      1. 8.4.1 Gate Driver Functional Modes
        1. 8.4.1.1 Sleep Mode
        2. 8.4.1.2 Operating Mode
        3. 8.4.1.3 Fault Reset (ENABLE Reset Pulse)
  9. 9 Application and Implementation
    1. 9.1 Application Information
      1. 9.1.1 Hall Sensor Configuration and Connection
        1. 9.1.1.1 Typical Configuration
        2. 9.1.1.2 Open Drain Configuration
        3. 9.1.1.3 Series Configuration
        4. 9.1.1.4 Parallel Configuration
    2. 9.2 Typical Application
      1. 9.2.1 Primary Application
        1. 9.2.1.1 Design Requirements
        2. 9.2.1.2 Detailed Design Procedure
          1. 9.2.1.2.1 External MOSFET Support
            1. 9.2.1.2.1.1 Example
          2. 9.2.1.2.2 IDRIVE Configuration
            1. 9.2.1.2.2.1 Example
          3. 9.2.1.2.3 VDS Overcurrent Monitor Configuration
            1. 9.2.1.2.3.1 Example
        3. 9.2.1.3 Application Curves
  10. 10Power Supply Recommendations
    1. 10.1 Bulk Capacitance Sizing
  11. 11Layout
    1. 11.1 Layout Guidelines
    2. 11.2 Layout Example
  12. 12デバイスおよびドキュメントのサポート
    1. 12.1 デバイス・サポート
      1. 12.1.1 デバイスの項目表記
    2. 12.2 ドキュメントのサポート
      1. 12.2.1 関連資料
    3. 12.3 ドキュメントの更新通知を受け取る方法
    4. 12.4 コミュニティ・リソース
    5. 12.5 商標
    6. 12.6 静電気放電に関する注意事項
    7. 12.7 Glossary
  13. 13メカニカル、パッケージ、および注文情報

パッケージ・オプション

メカニカル・データ（パッケージ｜ピン）
サーマルパッド・メカニカル・データ
発注情報

7.1 Absolute Maximum Ratings

over operating ambient temperature range (unless otherwise noted)(1)
MIN MAX UNIT
Power supply voltage (VM) –0.3 40 V
Voltage differential between any ground pin (AGND, DGND, PGND) –0.5 0.5 V
Internal logic regulator voltage (DVDD) –0.3 3.8 V
MOSFET voltage sense (VDRAIN) –0.3 40 V
Charge pump voltage (VCP, CPH) –0.3 VM + 13.5 V
Charge pump negative switching pin voltage (CPL) –0.3 VM V
Digital pin voltage (PWM, DIR, nBRAKE, nFAULT, ENABLE, VDS, IDRIVE, FGOUT) –0.3 5.75 V
Open drain output current range (nFAULT, FGOUT) 0 5 mA
Continuous high-side gate pin voltage (GHX) –2 VCP + 0.5 V
Pulsed 200 ns high-side gate pin voltage (GHX) -5 VCP + 0.5 V
High-side gate voltage with respect to SHX (GHX) –0.3 13.5 V
Continuous phase node pin voltage (SHX) –2 VM + 2 V
Pulsed 200 ns phase node pin voltage (SHX) -5 VM + 2 V
Continuous low-side gate pin voltage (GLX) –1 13.5 V
Pulsed 200 ns low-side gate pin voltage (GLX) -5 13.5 V
Gate pin source current (GHX, GLX) Internally limited A
Gate pin sink current (GHX, GLX) Internally limited A
Hall sensor input terminal voltage (HPA, HPB, HPC, HNA, HNB, HNC) 0 DVDD V
Junction temperature, TJ –40 150 °C
Storage temperature, Tstg –65 150 °C
(1) Stresses beyond those listed under Absolute Maximum Rating may cause permanent damage to the device. These are stress ratings only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Condition. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.