JAJSMZ5B September 2021 – February 2022 DRV8311
PRODUCTION DATA
An adjustable gate-drive current control to the MOSFETs allows for easy slew rate control. The MOSFET VDS slew rates are a critical factor for optimizing radiated emissions, energy and duration of diode recovery spikes and switching voltage transients related to parasitic. These slew rates are predominantly determined by the rate of gate charge to internal MOSFETs as shown in Figure 8-18.
The slew rate of each half-bridge can be adjusted by SLEW pin in hardware device variant or by using SLEW register settings in SPI device variant. The slew rate is calculated by the rise-time and fall-time of the voltage on OUTx pin as shown in Figure 8-19.