JAJSL26B January 2021 – April 2022 DRV8316
PRODUCTION DATA
The device is fully protected for any cross conduction of MOSFETs. In half-bridge configuration, the operation of high-side and low-side MOSFETs are ensured to avoid any shoot-through currents by inserting a dead time (tdead). This is implemented by sensing the gate-source voltage (VGS) of the high-side and low-side MOSFETs and ensuring that VGS of high-side MOSFET has reached below turn-off levels before switching on the low-side MOSFET of same half-bridge as shown in Figure 8-17 and Figure 8-18.