JAJSL26B January 2021 – April 2022 DRV8316
PRODUCTION DATA
Because the output stages use N-channel FETs, the device requires a gate-drive voltage higher than the VM power supply to enhance the high-side FETs fully. The DRV8316 integrates a charge-pump circuit that generates a voltage above the VM supply for this purpose.
The charge pump requires two external capacitors for operation. See the block diagram, pin descriptions and see section (Section 8.3 ) for details on these capacitors (value, connection, and so forth).
The charge pump shuts down when nSLEEP is low.