JAJSOU0A June   2022  – October 2022 DRV8329

PRODUCTION DATA  

  1. 1 特長
  2. 2 アプリケーション
  3. 3 概要
  4. 4 Revision History
  5. 5 Device Comparison Table
  6. 6 Pin Configuration and Functions
  7. 7 Specification
    1. 7.1 Absolute Maximum Ratings
    2. 7.2 ESD Ratings Comm
    3. 7.3 Recommended Operating Conditions
    4. 7.4 Thermal Information 1pkg
    5. 7.5 Electrical Characteristics
    6. 7.6 Typical Characteristics
  8. 8 Detailed Description
    1. 8.1 Overview
    2. 8.2 Functional Block Diagram
    3. 8.3 Feature Description
      1. 8.3.1 Three BLDC Gate Drivers
        1. 8.3.1.1 PWM Control Modes
          1. 8.3.1.1.1 6x PWM Mode
          2. 8.3.1.1.2 3x PWM Mode
        2. 8.3.1.2 Device Hardware Interface
        3. 8.3.1.3 Gate Drive Architecture
          1. 8.3.1.3.1 Propagation Delay
          2. 8.3.1.3.2 Deadtime and Cross-Conduction Prevention
      2. 8.3.2 AVDD Linear Voltage Regulator
      3. 8.3.3 Pin Diagrams
      4. 8.3.4 Low-Side Current Sense Amplifiers
        1. 8.3.4.1 Current Sense Operation
      5. 8.3.5 Gate Driver Shutdown Sequence (DRVOFF)
      6. 8.3.6 Gate Driver Protective Circuits
        1. 8.3.6.1 PVDD Supply Undervoltage Lockout (PVDD_UV)
        2. 8.3.6.2 AVDD Power on Reset (AVDD_POR)
        3. 8.3.6.3 GVDD Undervoltage Lockout (GVDD_UV)
        4. 8.3.6.4 BST Undervoltage Lockout (BST_UV)
        5. 8.3.6.5 MOSFET VDS Overcurrent Protection (VDS_OCP)
        6. 8.3.6.6 VSENSE Overcurrent Protection (SEN_OCP)
        7. 8.3.6.7 Thermal Shutdown (OTSD)
    4. 8.4 Device Functional Modes
      1. 8.4.1 Gate Driver Functional Modes
        1. 8.4.1.1 Sleep Mode
        2. 8.4.1.2 Operating Mode
        3. 8.4.1.3 Fault Reset (nSLEEP Reset Pulse)
  9. 9 Application and Implementation
    1. 9.1 Application Information
    2. 9.2 Typical Application
      1. 9.2.1 Three Phase Brushless-DC Motor Control
        1. 9.2.1.1 Detailed Design Procedure
          1. 9.2.1.1.1  Motor Voltage
          2. 9.2.1.1.2  Bootstrap Capacitor and GVDD Capacitor Selection
          3. 9.2.1.1.3  Gate Drive Current
          4. 9.2.1.1.4  Gate Resistor Selection
          5. 9.2.1.1.5  System Considerations in High Power Designs
            1. 9.2.1.1.5.1 Capacitor Voltage Ratings
            2. 9.2.1.1.5.2 External Power Stage Components
            3. 9.2.1.1.5.3 Parallel MOSFET Configuration
          6. 9.2.1.1.6  Dead Time Resistor Selection
          7. 9.2.1.1.7  VDSLVL Selection
          8. 9.2.1.1.8  AVDD Power Losses
          9. 9.2.1.1.9  Current Sensing and Output Filtering
          10. 9.2.1.1.10 Power Dissipation and Junction Temperature Losses
      2. 9.2.2 Application Curves
  10. 10Power Supply Recommendations
    1. 10.1 Bulk Capacitance Sizing
  11. 11Layout
    1. 11.1 Layout Guidelines
    2. 11.2 Layout Example
    3. 11.3 Thermal Considerations
      1. 11.3.1 Power Dissipation
  12. 12Device and Documentation Support
    1. 12.1 Device Support
      1. 12.1.1 Device Nomenclature
    2. 12.2 Documentation Support
      1. 12.2.1 Related Documentation
    3. 12.3 Related Links
    4. 12.4 Receiving Notification of Documentation Updates
    5. 12.5 Community Resources
    6. 12.6 Trademarks
  13. 13Mechanical, Packaging, and Orderable Information
    1. 13.1 Tape and Reel Information

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発注情報
9.2.1.1.5.2 External Power Stage Components

External components in the power stage are not required by design but are helpful in suppressing transients, managing inductor coil energy, mitigating supply pumping, dampening phase ringing, or providing strong gate-to-source pulldown paths. These components are used for system tuning and debuggability so the BLDC motor system is robust while avoiding damage to the DRV8329 device or external MOSFETs.

Figure 9-5 shows examples of power stage components that can be optimally placed in the design.

Figure 9-5 Optional external power stage components

Some examples of issues and external components that can resolve those issues are found in Table 9-2:

Table 9-2 Common issues and resolutions for power stage debugging

Issue

Resolution

Component(s)

Gate drive current required is too large, resulting in very fast MOSFET VDS slew rate

Series resistors required for gate drive current adjustability

0-100 Ω series resistors (RGATE/RSOURCE) at gate driver outputs (GHx/GLx), optional sink resistor (RSINK) and diode in parallel with gate resistor for adjustable sink current

Ringing at phase’s switch node (SHx) resulting in high EMI emissions

RC snubbers placed in parallel to each HS/LS MOSFET to dampen oscillations

Resistor (RSNUB) and Capacitor (CSNUB) placed parallel to the MOSFET, calculate RC values based on ringing frequency using Proper RC Snubber Design for Motor Drivers

Negative transients at low-side source (LSS) below minimum specification

HS drain to LS source capacitor to suppress negative bouncing

0.01uF-1uF, VM-rated capacitor from PVDD-LSS (CHSD_LSS) placed near LS MOSFET’s source

Negative transient at low-side gate (GLx) below minimum specification

Gate-to-ground Zener diode to clamp negative voltage

GVDD voltage rated Zener diode (DGS) with anode connected to GND and cathode connected to GLx

Extra protection required to ensure MOSFET is turned off if gate drive signals are Hi-Z

External gate-to-source pulldown resistors (after series gate resistors)

10 kΩ to 100 kΩ resistor (RPD) connected from gate to source for each MOSFET