JAJSHI4 May 2019 DRV8340-Q1
PRODUCTION DATA.
PARAMETER | TEST CONDITIONS | MIN | TYP | MAX | UNIT | |||
---|---|---|---|---|---|---|---|---|
POWER SUPPLIES (DVDD, VCP, VM) | ||||||||
IVM | VM operating supply current | VVM = 24 V, ENABLE = 3.3 V, INHx/INLx = 0 V, SHx = 0 V | 12 | 16 | mA | |||
IVMQ | VM sleep mode supply current | ENABLE = 0 V, VVM = 24 V, TA = 25°C | 12 | 20 | µA | |||
ENABLE = 0 V, VVM = 24 V, TA = 125°C | 50 | |||||||
tRST | Reset pulse time | ENABLE = 0 V period to reset faults | 4.4 | 43 | µs | |||
tWAKE(1) | Turnon time | ENABLE = 3.3 V to outputs ready, VVM > VUVLO | 1 | ms | ||||
tSLEEP | Turnoff time | ENABLE = 0 V to device sleep mode | 1 | ms | ||||
VDVDD | DVDD regulator voltage | VVM > 6 V, IDVDD = 0 to 30 mA | 3 | 3.3 | 3.6 | V | ||
VVM = 5.5 to 6 V, IDVDD = 0 to 20 mA | 3 | 3.3 | 3.6 | V | ||||
VVCP | VCP operating voltage
with respect to VM |
VVM = 13 V, IVCP = 0 to 25 mA | 8.4 | 11 | 12.5 | V | ||
VVM = 10 V, IVCP = 0 to 20 mA | 6.3 | 9 | 10 | |||||
VVM = 8 V, IVCP = 0 to 15 mA | 5.4 | 7 | 8 | |||||
VVM = 5.5 V, IVCP = 0 to 5 mA | 4 | 5 | 6 | |||||
LOGIC-LEVEL INPUTS (CAL, ENABLE, INHx, INLx, SCLK, SDI) | ||||||||
VIL | Input logic low voltage | 0 | 0.7 | V | ||||
VIH | Input logic high voltage | 1.6 | 5.5 | V | ||||
VHYS | Input logic hysteresis | 182 | mV | |||||
IIL | Input logic low current | VVIN = 0 V; INHx, INLx, SDI(IDRIVE), SCLK(VDS), ENABLE | –5 | 5 | µA | |||
IIH | Input logic high current | VVIN = 5 V; INHx, INLx, SDI(IDRIVE), SCLK(VDS) | 50 | 90 | µA | |||
IIH | Input logic high current | VVIN = 5 V; ENABLE | 80 | 110 | µA | |||
RPD | Pulldown resistance | To AGND; INHx, INLx, SDI(IDRIVE), SCLK(VDS) | 50 | 100 | 200 | kΩ | ||
RPD | Pulldown resistance | To AGND; ENABLE | 30 | 60 | 110 | kΩ | ||
tPD | Propagation delay | INHx/INLx input buffer and digital core propagation delay. Dead time is excluded. | 105 | ns | ||||
LOGIC LEVEL INPUT (nSCS) | ||||||||
VIL,nSCS | Input logic low voltage | 0 | 0.7 | V | ||||
VIH,nSCS | Input logic high voltage | 1.6 | 5.5 | V | ||||
RPU,nSCS | Pullup resistance | To DVDD | 25 | 50 | 90 | kΩ | ||
SEVEN-LEVEL H/W INPUTS (MODE, IDRIVE, VDS) | ||||||||
VI1 | Input mode 1 voltage | Tied to AGND | 0 | V | ||||
VI2 | Input mode 2 voltage | 18 kΩ ± 5% tied to AGND | 0.5 | V | ||||
VI3 | Input mode 3 voltage | 75 kΩ ± 5% tied to AGND | 1.1 | V | ||||
VI4 | Input mode 4 voltage | Hi-Z ( > 1.5 MΩ ) | 1.65 | V | ||||
VI5 | Input mode 5 voltage | 75 kΩ ± 5% tied to DVDD | 2.2 | V | ||||
VI6 | Input mode 6 voltage | 18 kΩ ± 5% tied to DVDD | 2.8 | V | ||||
VI7 | Input mode 7 voltage | MODE : 0.47 kΩ ± 5% tied to DVDD
VDS, IDRIVE : Tied to DVDD |
3.3 | V | ||||
RPU | Pullup resistance | Internal pullup to DVDD | 35 | 73 | 125 | kΩ | ||
RPD | Pulldown resistance | Internal pulldown to AGND | 35 | 73 | 125 | kΩ | ||
PUSH-PULL OUTPUT (SDO) | ||||||||
RPU,SDO | Internal pullup | To VSDO = 5 V | 40 | 90 | Ω | |||
To VSDO = 3.3 V | 60 | 120 | ||||||
RPD,SDO | Internal pulldown | To GND | 30 | 50 | Ω | |||
OPEN DRAIN OUTPUT (nFAULT) | ||||||||
VOL | Output logic low voltage | IO = 5 mA | 0.15 | V | ||||
IOZ | Output high impedance leakage | VO = 5 V | –1 | 9 | µA | |||
GATE DRIVERS (GHx, GLx) | ||||||||
VGSH | High-side gate drive voltage
with respect to SHx |
VVM = 13 V, IVCP = 0 to 25 mA, GHx no output load | 8.4 | 11 | 12.5 | V | ||
VVM = 10 , IVCP = 0 to 20 mA, GHx no output load | 6.3 | 9 | 10 | |||||
VVM = 8 V, IVCP = 0 to 15 mA, GHx no output load | 5.4 | 7 | 8 | |||||
VVM = 5.5 V, IVCP = 0 to 5 mA, GHx no output load | 4 | 5 | 6 | |||||
VGSL | Low-side gate drive voltage
with respect to PGND |
VVM = 12 V, IVCP = 0 to 25 mA, GLx no output load | 9 | 11 | 12 | V | ||
VVM = 10 V, IVCP = 0 to 20 mA, GLx no output load | 9.9 | 10.0 | 10.1 | |||||
VVM = 8 V, IVCP = 0 to 15 mA, GLx no output load | 7.9 | 8.0 | 8.1 | |||||
VVM = 5.5 V, IVCP = 0 to 5 mA, GLx no output load | 5.4 | 5.5 | 5.6 | |||||
tDEAD | Gate drive
dead time |
SPI Device | DEAD_TIME = 00b | 500 | ns | |||
DEAD_TIME = 01b | 1000 | |||||||
DEAD_TIME = 10b | 2000 | |||||||
DEAD_TIME = 11b | 4000 | |||||||
H/W Device | 1000 | |||||||
tDRIVE | Peak current
gate drive time |
SPI Device | TDRIVE = 00b | 500 | ns | |||
TDRIVE = 01b | 1000 | |||||||
TDRIVE = 10b | 2000 | |||||||
TDRIVE = 11b | 3000 | |||||||
H/W Device | 3000 | |||||||
tDRIVE_MAX | Peak current gate drive max time | IDRIVEP_Hx = 0000b, 0001b, 0010b, 0011b | 20 | µs | ||||
IDRIVEP | Peak source
gate current |
SPI Device | IDRIVEP_Hx = 0000b (GHx), VVM = 24 V | 0.45 | 1.5 | 3.0 | mA | |
IDRIVEP_Lx = 0000b (GLx), VVM = 24 V | 0.81 | 2.7 | 5.4 | |||||
IDRIVEP_Hx = 0001b (GHx), VVM = 24 V | 1.05 | 3.5 | 7 | |||||
IDRIVEP_Lx = 0001b (GLx), VVM = 24 V | 1.17 | 3.9 | 7.8 | |||||
IDRIVEP_Hx = 0010b (GHx), VVM = 24 V | 1.5 | 5 | 10 | |||||
IDRIVEP_Lx = 0010b (GLx), VVM = 24 V | 1.95 | 6.5 | 13 | |||||
IDRIVEP_Hx or IDRIVEP_Lx = 0011b (GHx/GLx), VVM = 24 V | 3 | 10 | 20 | |||||
IDRIVEP_Hx or IDRIVEP_Lx = 0100b (GHx/GLx), VVM = 24 V | 4.5 | 15 | 30 | |||||
IDRIVEP_Hx or IDRIVEP_Lx = 0101b (GHx/GLx), VVM = 24 V | 15 | 50 | 100 | |||||
IDRIVEP_Hx or IDRIVEP_Lx = 0110b (GHx/GLx), VVM = 24 V | 18 | 60 | 120 | |||||
IDRIVEP_Hx or IDRIVEP_Lx = 0111b (GHx/GLx), VVM = 24 V | 19.5 | 65 | 130 | |||||
IDRIVEP_Hx or IDRIVEP_Lx = 1000b (GHx/GLx), VVM = 24 V | 76 | 200 | 400 | |||||
IDRIVEP_Hx or IDRIVEP_Lx = 1001b (GHx/GLx), VVM = 24 V | 79.8 | 210 | 420 | |||||
IDRIVEP_Hx or IDRIVEP_Lx = 1010b (GHx/GLx), VVM = 24 V | 98.8 | 260 | 520 | |||||
IDRIVEP_Hx or IDRIVEP_Lx = 1011b (GHx/GLx), VVM = 24 V | 100.7 | 265 | 530 | |||||
IDRIVEP_Hx or IDRIVEP_Lx = 1100b (GHx/GLx), VVM = 24 V | 279.3 | 735 | 1470 | |||||
IDRIVEP_Hx or IDRIVEP_Lx = 1101b (GHx/GLx), VVM = 24 V | 304 | 800 | 1600 | |||||
IDRIVEP_Hx or IDRIVEP_Lx = 1110b (GHx/GLx), VVM = 24 V | 355.3 | 935 | 1870 | |||||
IDRIVEP_Hx or IDRIVEP_Lx = 1111b (GHx/GLx), VVM = 24 V | 380 | 1000 | 2000 | |||||
H/W Device | IDRIVE = Tied to AGND (GHx), VVM = 24 V | 0.45 | 1.5 | 3.0 | ||||
IDRIVE = Tied to AGND (GLx), VVM = 24 V | 0.81 | 2.7 | 5.4 | |||||
IDRIVE = 18 kΩ ± 5% tied to AGND (GHx), VVM = 24 V | 1.5 | 5 | 10 | |||||
IDRIVE = 18 kΩ ± 5% tied to AGND (GLx), VVM = 24 V | 1.95 | 6.5 | 13 | |||||
IDRIVE = 75 kΩ ± 5% tied to AGND (GHx/GLx), VVM = 24 V | 3 | 10 | 20 | |||||
IDRIVE = Hi-Z (GHx/GLx), VVM = 24 V | 18 | 60 | 120 | |||||
IDRIVE = 75 kΩ ± 5% tied to DVDD (GHx/GLx), VVM = 24 V | 76 | 200 | 400 | |||||
IDRIVE = 18 kΩ ± 5% tied to DVDD (GHx/GLx), VVM = 24 V | 98.8 | 260 | 520 | |||||
IDRIVE = Tied to DVDD (GHx/GLx), VVM = 24 V | 380 | 1000 | 2000 | |||||
IDRIVEN | Peak sink
gate current |
SPI Device | IDRIVEN_Hx or IDRIVEN_Lx = 0000b, VVM = 24 V | 0.9 | 3 | 5.4 | mA | |
IDRIVEN_Hx or IDRIVEN_Lx = 0001b, VVM = 24 V | 2.09 | 7 | 12.6 | |||||
IDRIVEN_Hx or IDRIVEN_Lx = 0010b, VVM = 24 V | 3 | 10 | 18 | |||||
IDRIVEN_Hx or IDRIVEN_Lx = 0011b, VVM = 24 V | 6 | 20 | 36 | |||||
IDRIVEN_Hx or IDRIVEN_Lx= 0100b, VVM = 24 V | 9 | 30 | 54 | |||||
IDRIVEN_Hx or IDRIVEN_Lx = 0101b, VVM = 24 V | 30 | 100 | 180 | |||||
IDRIVEN_Hx or IDRIVEN_Lx = 0110b, VVM = 24 V | 36 | 120 | 216 | |||||
IDRIVEN_Hx or IDRIVEN_Lx = 0111b, VVM = 24 V | 39 | 130 | 234 | |||||
IDRIVEN_Hx or IDRIVEN_Lx = 1000b, VVM = 24 V | 120 | 400 | 720 | |||||
IDRIVEN_Hx or IDRIVEN_Lx = 1001b, VVM = 24 V | 126 | 420 | 756 | |||||
IDRIVEN_Hx or IDRIVEN_Lx = 1010b, VVM = 24 V | 156 | 520 | 936 | |||||
IDRIVEN_Hx or IDRIVEN_Lx = 1011b, VVM = 24 V | 159 | 530 | 954 | |||||
IDRIVEN_Hx or IDRIVEN_Lx = 1100b, VVM = 24 V | 441 | 1470 | 2646 | |||||
IDRIVEN_Hx or IDRIVEN_Lx = 1101b, VVM = 24 V | 480 | 1600 | 2880 | |||||
IDRIVEN_Hx or IDRIVEN_Lx = 1110b, VVM = 24 V | 561 | 1870 | 3366 | |||||
IDRIVEN_Hx or IDRIVEN_Lx = 1111b, VVM = 24 V | 600 | 2000 | 3600 | |||||
H/W Device | IDRIVE = Tied to AGND, VVM = 24 V | 0.9 | 3 | 5.4 | ||||
IDRIVE = 18 kΩ ± 5% tied to AGND, VVM = 24 V | 3 | 10 | 18 | |||||
IDRIVE = 75 kΩ ± 5% tied to AGND, VVM = 24 V | 6 | 20 | 36 | |||||
IDRIVE = Hi-Z, VVM = 24 V | 36 | 120 | 216 | |||||
IDRIVE = 75 kΩ ± 5% tied to DVDD, VVM = 24 V | 120 | 400 | 720 | |||||
IDRIVE = 18 kΩ ± 5% tied to DVDD, VVM = 24 V | 156 | 520 | 936 | |||||
IDRIVE = Tied to DVDD, VVM = 24 V | 600 | 2000 | 3600 | |||||
IHOLDP | Gate holding source current after tDRIVE | SPI Device | IDRIVEP_Hx = 0000b, VVM = 24 V | 0.45 | 1.5 | 3.8 | mA | |
IDRIVEP_Hx = 0001b, VVM = 24 V | 1.05 | 3.5 | 7 | |||||
IDRIVEP_Hx = 0010b, VVM = 24 V | 1.5 | 5 | 10 | |||||
IDRIVEP_Hx = 0011b, VVM = 24 V | 3 | 10 | 20 | |||||
All other IDRIVE settings, VVM = 24 V | 4.5 | 15 | 30 | |||||
H/W Device | IDRIVE tied to AGND, VVM = 24 V | 0.45 | 1.5 | 3.8 | ||||
IDRIVE = 18 kΩ ± 5% tied to AGND, VVM = 24 V | 1.5 | 5 | 10 | |||||
IDRIVE = 75 kΩ ± 5% tied to AGND, VVM = 24 V | 3 | 10 | 20 | |||||
All other IDRIVE settings, VVM = 24 V | 4.5 | 15 | 30 | |||||
IHOLDN | Gate holding sink current after tDRIVE | SPI Device | IDRIVEP_Hx = 0000b, VVM = 24 V | 0.9 | 3 | 5.4 | mA | |
IDRIVEP_Hx = 0001b, VVM = 24 V | 2 | 7 | 12.6 | |||||
IDRIVEP_Hx = 0010b, VVM = 24 V | 3 | 10 | 18 | |||||
IDRIVEP_Hx = 0011b, VVM = 24 V | 6 | 20 | 36 | |||||
All other IDRIVE settings, VVM = 24 V | 9 | 30 | 54 | |||||
H/W Device | IDRIVE tied to AGND, VVM = 24 V | 0.9 | 3 | 5.4 | ||||
IDRIVE = 18 kΩ ± 5% tied to AGND, VVM = 24 V | 3 | 10 | 18 | |||||
IDRIVE = 75 kΩ ± 5% tied to AGND, VVM = 24 V | 6 | 20 | 36 | |||||
All other IDRIVE settings, VVM = 24 V | 9 | 30 | 54 | |||||
ISTRONG | Gate strong pulldown current
(GHx to SHx and GLx to PGND) |
IDRIVEP_Hx = 0000b, 0001b, 0010b, 0011b, VVM = 24 V | 9 | 30 | 54 | mA | ||
All other IDRIVE settings, VVM = 24 V | 0.6 | 2 | 3.6 | A | ||||
ROFF | Gate hold off resistor | GHx to SHx | 150 | 280 | kΩ | |||
ROFF | Gate hold off resistor | GLx to PGND | 150 | 280 | kΩ | |||
PROTECTION CIRCUITS | ||||||||
VUVLO | VM undervoltage lockout | VM falling, UVLO report | 5.2 | 5.4 | V | |||
VM rising, UVLO recovery | 5.4 | 5.9 | ||||||
VUVLO,DVDD | DVDD undervoltage lockout | 2.9 | V | |||||
VUVLO_HYS | VM undervoltage hysteresis | Rising to falling threshold | 200 | mV | ||||
tUVLO_DEG | VM undervoltage deglitch time | VM falling, UVLO report | 11.5 | µs | ||||
VCPUV | Charge pump undervoltage lockout | VCP falling, CPUV report | VVM + 1.4 | VVM + 2.5 | VVM + 3.1 | V | ||
VGS_CLAMP | High-side gate clamp | Positive clamping voltage | 15 | 16.5 | 19 | V | ||
Negative clamping voltage | –0.7 | |||||||
VOLA | Open load active mode detection threshold | DLx – VDRAIN | 150 | 300 | 430 | mV | ||
SLx – SHx, –1 < SLx < 0 | 150 | 300 | 500 | |||||
IOL | Open load current | 2.5 | mA | |||||
tOLP | Open load passive diagnostic delay | SPI Device | OLP_SHRT_DLY = 00b | 0.25 | ms | |||
OLP_SHRT_DLY = 01b | 1.25 | |||||||
OLP_SHRT_DLY = 10b | 5 | |||||||
OLP_SHRT_DLY = 11b | 11.5 | |||||||
H/W Device | After tWAKE and tSHORTS elapse | 5 | ||||||
tSHORTS | Offline short-to-battery and short-to-GND diagnostic delay | SPI Device | OLP_SHRT_DLY = 00b | 0.1 | ms | |||
OLP_SHRT_DLY = 01b | 0.5 | |||||||
OLP_SHRT_DLY = 10b | 2 | |||||||
OLP_SHRT_DLY = 11b | 4.4 | |||||||
H/W Device | After tWAKE elapses | 2 | ||||||
VVDS_OCP | VDS overcurrent
trip voltage |
SPI Device | VDS_LVL = 0000b | 0.01 | 0.06 | 0.11 | V | |
VDS_LVL = 0001b | 0.08 | 0.13 | 0.18 | |||||
VDS_LVL = 0010b | 0.15 | 0.2 | 0.25 | |||||
VDS_LVL = 0011b | 0.2 | 0.26 | 0.32 | |||||
VDS_LVL = 0100b | 0.24 | 0.31 | 0.38 | |||||
VDS_LVL = 0101b | 0.38 | 0.45 | 0.52 | |||||
VDS_LVL = 0110b | 0.45 | 0.53 | 0.61 | |||||
VDS_LVL = 0111b | 0.51 | 0.6 | 0.69 | |||||
VDS_LVL = 1000b | 0.59 | 0.68 | 0.77 | |||||
VDS_LVL = 1001b | 0.64 | 0.75 | 0.86 | |||||
VDS_LVL = 1010b | 0.81 | 0.94 | 1.07 | |||||
VDS_LVL = 1011b | 0.97 | 1.13 | 1.29 | |||||
VDS_LVL = 1100b | 1.14 | 1.3 | 1.46 | |||||
VDS_LVL = 1101b | 1.34 | 1.5 | 1.66 | |||||
VDS_LVL = 1110b | 1.52 | 1.7 | 1.88 | |||||
VDS_LVL = 1111b | 1.69 | 1.88 | 2.07 | |||||
H/W Device | VDS = Tied to AGND | 0.01 | 0.06 | 0.11 | ||||
VDS = 18 kΩ ± 5% tied to AGND | 0.08 | 0.13 | 0.18 | |||||
VDS = 75 kΩ ± 5% tied to AGND | 0.2 | 0.26 | 0.32 | |||||
VDS = Hi-Z | 0.51 | 0.6 | 0.69 | |||||
VDS = 75 kΩ ± 5% tied to DVDD | 0.97 | 1.13 | 1.29 | |||||
VDS = 18 kΩ ± 5% tied to DVDD | 1.69 | 1.88 | 2.07 | |||||
VDS = Tied to DVDD | Disabled | |||||||
tOCP_DEG | VDS and VSENSE overcurrent deglitch time | SPI Device | OCP_DEG=000b | 2.5 | µs | |||
OCP_DEG = 001b | 4.75 | |||||||
OCP_DEG = 010b | 6.75 | |||||||
OCP_DEG = 011b | 8.75 | |||||||
OCP_DEG = 100b | 10.25 | |||||||
OCP_DEG = 101b | 11.5 | |||||||
OCP_DEG = 110b | 16.5 | |||||||
OCP_DEG = 111b | 20.5 | |||||||
H/W Device | 4.75 | |||||||
tRETRY | Overcurrent fault retry time | SPI Device | TRETRY = 00b | 2 | ms | |||
TRERTY = 01b | 4 | |||||||
TRETRY = 10b | 6 | |||||||
TRETRY = 11b | 8 | |||||||
THYS | Thermal hysteresis | Die temperature, TJ | 20 | °C | ||||
TOTSD | Thermal shutdown temperature | Die temperature, TJ | 150 | 170 | 188 | °C | ||
TOTW | Thermal warning temperature | Die temperature, TJ | 130 | 150 | 169 | °C |