JAJSCQ3E October 2016 – January 2021 DRV8702-Q1 , DRV8703-Q1
PRODUCTION DATA
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Register Name | 7 | 6 | 5 | 4 | 3 | 2 | 1 | 0 | Access Type | Address (Hex) |
---|---|---|---|---|---|---|---|---|---|---|
FAULT Status | FAULT | WDFLT | GDF | OCP | VM_UVFL | VCP_UVFL | OTSD | OTW | R | 0 |
VDS and GDF | H2_GDF | L2_GDF | H1_GDF | L1_GDF | H2_VDS | L2_VDS | H1_VDS | L1_VDS | R | 1 |
Main | RESERVED | LOCK | IN1/PH | IN2/EN | CLR_FLT | RW | 2 | |||
IDRIVE and WD | TDEAD | WD_EN | WD_DLY | IDRIVE | RW | 3 | ||||
VDS | SO_LIM | VDS | DIS_H2_VDS | DIS_L2_VDS | DIS_H1_VDS | DIS_L1_VDS | RW | 4 | ||
Config | TOFF | CHOP_IDS | VREF_SCL | SH_EN | GAIN_CS | RW | 5 |
Access Type | Code | Description |
---|---|---|
Read Type | ||
R | R | Read |
Write Type | ||
W | W | Write |
The status registers are used to report warning and fault conditions. Status registers are read only registers.
Table 7-16 lists the memory-mapped registers for the status registers. All register offset addresses not listed in Table 7-16 should be considered as reserved locations and the register contents should not be modified.
FAULT status is shown in Figure 7-19 and described in Table 7-17.
Return to Summary Table.
Read only
7 | 6 | 5 | 4 | 3 | 2 | 1 | 0 |
FAULT | WDFLT | GDF | OCP | VM_UVFL | VCP_UVFL | OTSD | OTW |
R-0b | R-0b | R-0b | R-0b | R-0b | R-0b | R-0b | R-0b |
Bit | Field | Type | Default | Description |
---|---|---|---|---|
7 | FAULT | R | 0b | Logic OR of the FAULT status register excluding the OTW bit |
6 | WDFLT | R | 0b | Watchdog time-out fault |
5 | GDF | R | 0b | Indicates gate drive fault condition |
4 | OCP | R | 0b | Indicates VDS monitor overcurrent fault condition |
3 | VM_UVFL | R | 0b | Indicates VM undervoltage lockout fault condition |
2 | VCP_UVFL | R | 0b | Indicates charge-pump undervoltage fault condition |
1 | OTSD | R | 0b | Indicates overtemperature shutdown |
0 | OTW | R | 0b | Indicates overtemperature warning |
VDS and GDF status is shown in Figure 7-20 and described in Table 7-18.
Return to Summary Table.
Read only
7 | 6 | 5 | 4 | 3 | 2 | 1 | 0 |
H2_GDF | L2_GDF | H1_GDF | L1_GDF | H2_VDS | L2_VDS | H1_VDS | L1_VDS |
R-0b | R-0b | R-0b | R-0b | R-0b | R-0b | R-0b | R-0b |
Bit | Field | Type | Default | Description |
---|---|---|---|---|
7 | H2_GDF | R | 0b | Indicates gate drive fault on the high-side FET of half-bridge 2 |
6 | L2_GDF | R | 0b | Indicates gate drive fault on the low-side FET of half-bridge 2 |
5 | H1_GDF | R | 0b | Indicates gate drive fault on the high-side FET of half-bridge 1 |
4 | L1_GDF | R | 0b | Indicates gate drive fault on the low-side FET of half-bridge 1 |
3 | H2_VDS | R | 0b | Indicates VDS monitor overcurrent fault on the high-side FET of half-bridge 2 |
2 | L2_VDS | R | 0b | Indicates VDS monitor overcurrent fault on the low-side FET of half-bridge 2 |
1 | H1_VDS | R | 0b | Indicates VDS monitor overcurrent fault on the high-side FET of half-bridge 1 |
0 | L1_VDS | R | 0b | Indicates VDS monitor overcurrent fault on the low-side FET of half-bridge 1 |
The control registers are used to configure the device. Control registers are read and write capable.
Table 7-19 lists the memory-mapped registers for the status registers. All register offset addresses not listed in Table 7-19 should be considered as reserved locations and the register contents should not be modified.
Main control is shown in Figure 7-21 and described in Table 7-20.
Return to Summary Table.
Read and write
7 | 6 | 5 | 4 | 3 | 2 | 1 | 0 |
RESERVED | LOCK | IN1/PH | IN2/EN | CLR_FLT | |||
R/W-00b | R/W-011b | R/W-0b | R/W-0b | R/W-0b |
Bit | Field | Type | Default | Description |
---|---|---|---|---|
7-6 | RESERVED | R/W | 00b | Reserved |
5-3 | LOCK | R/W | 011b | Write 110b to lock the settings by ignoring further register changes except to address 0x02h. Writing any sequence other than 110b has no effect when unlocked. |
2 | IN1/PH | R/W | 0b | This bit is ORed with the IN1/PH pin |
1 | IN2/EN | R/W | 0b | This bit is ORed with the IN2/EN pin |
0 | CLR_FLT | R/W | 0b | Write a 1 to this bit to clear the fault bits |
IDRIVE and WD control is shown in Figure 7-22 and described in Table 7-21.
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Read and write
7 | 6 | 5 | 4 | 3 | 2 | 1 | 0 |
TDEAD | WD_EN | WD_DLY | IDRIVE | ||||
R/W-00b | R/W-0b | R/W-00b | R/W-111b |
Bit | Field | Type | Default | Description |
---|---|---|---|---|
7-6 | TDEAD | R/W | 00b | Dead time 00b = 120 ns 01b = 240 ns 10b = 480 ns 11b = 960 ns |
5 | WD_EN | R/W | 0b | Enables or disables the watchdog time (disabled by default) |
4-3 | WD_DLY | R/W | 00b | Watchdog timeout delay (if WD_EN = 1) 00b = 10 ms 01b = 20 ms 10b = 50 ms 11b = 100 ms |
2-0 | IDRIVE | R/W | 111b | Sets the peak source current and peak sink current of the gate drive. Table 7-22 lists the bit settings. |
Bit Value | Source Current | Sink Current | ||
---|---|---|---|---|
VVM = 5.5 V | VVM = 13.5 V | VVM = 5.5 V | VVM = 13.5 V | |
000b | High-side: 10 mA Low-side: 10 mA | High-side: 10 mA Low-side: 10 mA | High-side: 20 mA Low-side: 20 mA | High-side: 20 mA Low-side: 20 mA |
001b | High-side: 20 mA Low-side: 20 mA | High-side: 20 mA Low-side: 20 mA | High-side: 40 mA Low-side: 40 mA | High-side: 40 mA Low-side: 40 mA |
010b | High-side: 50 mA Low-side: 40 mA | High-side: 50 mA Low-side: 45 mA | High-side: 90 mA Low-side: 85 mA | High-side: 95 mA Low-side: 95 mA |
011b | High-side: 70 mA Low-side: 55 mA | High-side: 70 mA Low-side: 60 mA | High-side: 120 mA Low-side: 115 mA | High-side: 130 mA Low-side: 125 mA |
100b | High-side: 100 mA Low-side: 75 mA | High-side: 105 mA Low-side: 90 mA | High-side: 170 mA Low-side: 160 mA | High-side: 185 mA Low-side: 180 mA |
101b | High-side: 145 mA Low-side: 115 mA | High-side: 155 mA Low-side: 130 mA | High-side: 250 mA Low-side: 235 mA | High-side: 265 mA Low-side: 260 mA |
110b | High-side: 190 mA Low-side: 145 mA | High-side: 210 mA Low-side: 180 mA | High-side: 330 mA Low-side: 300 mA | High-side: 350 mA Low-side: 350 mA |
111b | High-side: 240 mA Low-side: 190 mA | High-side: 260 mA Low-side: 225 mA | High-side: 420 mA Low-side: 360 mA | High-side: 440 mA Low-side: 430 mA |
VDS control is shown in Figure 7-23 and described in Table 7-23.
Return to Summary Table.
Read and write
7 | 6 | 5 | 4 | 3 | 2 | 1 | 0 |
SO_LIM | VDS | DIS_H2_VDS | DIS_L2_VDS | DIS_H1_VDS | DIS_L1_VDS | ||
R/W-0b | R/W-111b | R/W-0b | R/W-0b | R/W-0b | R/W-0b |
Bit | Field | Type | Default | Description |
---|---|---|---|---|
7 | SO_LIM | R/W | 0b | 0b = Default operation 1b = SO output is voltage-limited to 3.6 V |
6-4 | VDS | R/W | 111b | Sets the VDS(OCP) monitor for each FET 000b = 0.06 V 001b = 0.145 V 010b = 0.17 V 011b = 0.2 V 100b = 0.12 V 101b = 0.24 V 110b = 0.48 V 111b = 0.96 V |
3 | DIS_H2_VDS | R/W | 0b | Disables the VDS monitor on the high-side FET of half-bridge 2 (enabled by default) |
2 | DIS_L2_VDS | R/W | 0b | Disables the VDS monitor on the low-side FET of half-bridge 2 (enabled by default) |
1 | DIS_H1_VDS | R/W | 0b | Disables the VDS monitor on the high-side FET of half-bridge 1 (enabled by default) |
0 | DIS_L1_VDS | R/W | 0b | Disables the VDS monitor on the low-side FET of half-bridge 1 (enabled by default) |
Config control is shown in Figure 7-24 and described in Table 7-24.
Return to Summary Table.
Read and write
7 | 6 | 5 | 4 | 3 | 2 | 1 | 0 |
TOFF | CHOP_IDS | VREF_SCL | SH_EN | GAIN_CS | |||
R/W-00b | R/W-0b | R/W-00b | R/W-0b | R/W-01b |
Bit | Field | Type | Default | Description |
---|---|---|---|---|
7-6 | TOFF | R/W | 00b | Off time for PWM current chopping 00b = 25 µs 01b = 50 µs 10b = 100 µs 11b = 200 µs |
5 | CHOP_IDS | R/W | 0b | Disables current regulation (enabled by default) |
4-3 | VREF_SCL | R/W | 00b | Scale factor for the VREF input 00b = 100% 01b = 75% 10b = 50% 11b = 25% |
2 | SH_EN | R/W | 0b | Enables sample and hold operation of the shunt amplifier (disabled by default) |
1-0 | GAIN_CS | R/W | 01b | Shunt amplifier gain setting 00b = 10 V/V 01b = 19.8 V/V 10b = 39.4 V/V 11b = 78 V/V |