SLVSB18H March   2012  – August 2016 DRV8835

PRODUCTION DATA.  

  1. 1 Features
  2. 2 Applications
  3. 3 Description
  4. 4 Revision History
  5. 5 Pin Configuration and Functions
  6. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics
    6. 6.6 Timing Requirements
    7. 6.7 Typical Characteristics
  7. 7 Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1 Protection Circuits
        1. 7.3.1.1 Overcurrent Protection (OCP)
        2. 7.3.1.2 Thermal Shutdown (TSD)
        3. 7.3.1.3 Undervoltage Lockout (UVLO)
    4. 7.4 Device Functional Modes
      1. 7.4.1 Bridge Control
      2. 7.4.2 Sleep Mode
  8. 8 Application and Implementation
    1. 8.1 Application Information
    2. 8.2 Typical Application
      1. 8.2.1 Design Requirements
      2. 8.2.2 Detailed Design Procedure
        1. 8.2.2.1 Motor Voltage
        2. 8.2.2.2 Lower-Power Operation
      3. 8.2.3 Application Curve
  9. 9 Power Supply Recommendations
    1. 9.1 Bulk Capacitance
    2. 9.2 Power Supplies and Input Pins
  10. 10Layout
    1. 10.1 Layout Guidelines
    2. 10.2 Layout Example
    3. 10.3 Thermal Considerations
      1. 10.3.1 Power Dissipation
      2. 10.3.2 Heatsinking
  11. 11Device and Documentation Support
    1. 11.1 Documentation Support
      1. 11.1.1 Related Documentation
    2. 11.2 Receiving Notification of Documentation Updates
    3. 11.3 Community Resources
    4. 11.4 Trademarks
    5. 11.5 Electrostatic Discharge Caution
    6. 11.6 Glossary
  12. 12Mechanical, Packaging, and Orderable Information

パッケージ・オプション

メカニカル・データ（パッケージ｜ピン）
サーマルパッド・メカニカル・データ
発注情報

6 Specifications

6.1 Absolute Maximum Ratings

See (1)(2)
MIN MAX UNIT
Power supply voltage, VM –0.3 12 V
Power supply voltage, VCC –0.3 7 V
Digital input pin voltage –0.5 VCC + 0.5 V
Peak motor drive output current Internally limited A
Continuous motor drive output current per H-bridge(3) –1.5 1.5 A
TJ Operating junction temperature –40 150 °C
Tstg Storage temperature –60 150 °C
(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
(2) All voltage values are with respect to network ground terminal.
(3) Power dissipation and thermal limits must be observed.

6.2 ESD Ratings

VALUE UNIT
V(ESD) Electrostatic discharge Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001(1) ±2000 V
Charged-device model (CDM), per JEDEC specification JESD22-C101(2) ±1500
(1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.
(2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.

6.3 Recommended Operating Conditions

TA = 25°C (unless otherwise noted)
MIN NOM MAX UNIT
VCC Device power supply voltage 2 7 V
VM Motor power supply voltage 0 11 V
VIN Logic level input voltage 0 VCC V
IOUT H-bridge output current(1) 0 1.5 A
ƒPWM Externally applied PWM frequency 0 250 kHz
(1) Power dissipation and thermal limits must be observed.

6.4 Thermal Information

THERMAL METRIC(1) DRV8835 UNIT
DSS (WSON)
12 PINS
RθJA Junction-to-ambient thermal resistance 50.4 °C/W
RθJC(top) Junction-to-case (top) thermal resistance 58 °C/W
RθJB Junction-to-board thermal resistance 19.9 °C/W
ψJT Junction-to-top characterization parameter 0.9 °C/W
ψJB Junction-to-board characterization parameter 20 °C/W
RθJC(bot) Junction-to-case (bottom) thermal resistance 6.9 °C/W
(1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application report.

6.5 Electrical Characteristics

TA = 25°C, VM = 5 V, VCC = 3 V (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
POWER SUPPLY
IVM VM operating supply current No PWM, no load 85 200 µA
50 kHz PWM, no load 650 2000
IVMQ VM sleep mode supply current VM = 2 V, VCC = 0 V, all inputs 0 V 5 nA
VM = 5 V, VCC = 0 V, all inputs 0 V 10 95
IVCC VCC operating supply current 450 2000 µA
VUVLO VCC undervoltage lockout voltage VCC rising 2 V
VCC falling 1.9
LOGIC-LEVEL INPUTS
VIL Input low voltage 0.3 × VCC V
VIH Input high voltage 0.5 × VCC V
IIL Input low current VIN = 0 –5 5 μA
IIH Input high current VIN = 3.3 V 50 μA
RPD Pulldown resistance 100 kΩ
H-BRIDGE FETS
RDS(ON) HS + LS FET on resistance VCC = 3 V, VM = 3 V, I O = 800 mA,
TJ = 25°C		 370 420 mΩ
VCC = 5 V, VM = 5 V, I O = 800 mA,
TJ = 25°C		 305 355
IOFF OFF-state leakage current ±200 nA
PROTECTION CIRCUITS
IOCP Overcurrent protection trip level 1.6 3.5 A
tDEG Overcurrent de-glitch time 1 µs
tOCR Overcurrent protection retry time 1 ms
tDEAD Output dead time 100 ns
tTSD Thermal shutdown temperature Die temperature 150 160 180 °C

6.6 Timing Requirements

TA = 25°C, VM = 5 V, VCC = 3 V, RL = 20 Ω
NO. MIN MAX UNIT
1 t1 Delay time, xPHASE high to xOUT1 low 300 ns
2 t2 Delay time, xPHASE high to xOUT2 high 200 ns
3 t3 Delay time, xPHASE low to xOUT1 high 200 ns
4 t4 Delay time, xPHASE low to xOUT2 low 300 ns
5 t5 Delay time, xENBL high to xOUTx high 200 ns
6 t6 Delay time, xENBL high to xOUTx low 300 ns
7 t7 Output enable time 300 ns
8 t8 Output disable time 300 ns
9 t9 Delay time, xINx high to xOUTx high 160 ns
10 t10 Delay time, xINx low to xOUTx low 160 ns
11 tR Output rise time 30 188 ns
12 tF Output fall time 30 188 ns
DRV8835 timing3_lvsb17.gif Figure 1. Timing Requirements

6.7 Typical Characteristics

DRV8835 D008_SLVSB18.gif Figure 2. VM Operating Current
DRV8835 D007_SLVSB18.gif Figure 4. RDS(ON) (High-Side + Low-Side)
DRV8835 D006_SLVSB18.gif Figure 3. Sleep Current
DRV8835 D009_SLVSB18.gif Figure 5. VCC Operating Current