SLVSBA2D July 2012 – May 2016 DRV8844
PRODUCTION DATA.
MIN | MAX | UNIT | ||
---|---|---|---|---|
VM | Power supply voltage | –0.3 | 65 | V |
Logic ground voltage (LGND) | –0.5 | VM - 8 | V | |
Digital pin voltage | LGND – 0.5 | LGND + 7 | V | |
SRC12, SRC34 (pins 6 and 9 with optional sense resistor) to VNEG pins (pins 14 and 28) | –0.6 | 0.6 | V | |
Peak motor drive output current, t < 1 μs | Internally limited | A | ||
Continuous motor drive output current(2) | 2.5 | A | ||
TJ | Operating virtual junction temperature | –40 | 150 | °C |
Tstg | Storage temperature | –60 | 150 | °C |
VALUE | UNIT | ||||
---|---|---|---|---|---|
V(ESD) | Electrostatic discharge | Human body model (HBM), per ANSI/ESDA/JEDEC JS-001(1) | ±3000 | V | |
Charged device model (CDM), per JEDEC specification JESD22-C101(2) | ±1500 |
MIN | NOM | MAX | UNIT | ||
---|---|---|---|---|---|
VM | Motor power supply voltage(1) | 8 | 60 | V | |
IV3P3 | V3P3OUT load current | 0 | 10 | mA | |
TA | Ambient temperature | –40 | 125 | °C |
THERMAL METRIC(1) | DRV8844 | UNIT | |
---|---|---|---|
PWP (HTSSOP) | |||
16 PINS | |||
RθJA | Junction-to-ambient thermal resistance | 31.6 | °C/W |
RθJC(top) | Junction-to-case (top) thermal resistance | 15.9 | °C/W |
RθJB | Junction-to-board thermal resistance | 5.6 | °C/W |
ψJT | Junction-to-top characterization parameter | 0.2 | °C/W |
ψJB | Junction-to-board characterization parameter | 5.5 | °C/W |
RθJC(bot) | Junction-to-case (bottom) thermal resistance | 1.4 | °C/W |
PARAMETER | TEST CONDITIONS | MIN | TYP | MAX | UNIT | |
---|---|---|---|---|---|---|
POWER SUPPLIES | ||||||
IVM | VM operating supply current | VM = 24 V, fPWM < 50 kHz | 1 | 5 | mA | |
IVMQ | VM sleep mode supply current | VM = 24 V | 500 | 800 | μA | |
VUVLO | VM undervoltage lockout voltage | VM rising | 6.3 | 8 | V | |
V3P3OUT REGULATOR | ||||||
V3P3 | V3P3OUT voltage | IOUT = 0 to 1 mA | 3.18 | 3.3 | 3.52 | V |
LOGIC-LEVEL INPUTS | ||||||
VIL | Input low voltage | LGND + 0.6 | LGND + 0.7 | V | ||
VIH | Input high voltage | LGND + 2.2 | LGND + 5.25 | V | ||
VHYS | Input hysteresis | 50 | 600 | mV | ||
IIL | Input low current | VIN = LGND | –5 | 5 | μA | |
IIH | Input high current | VIN = LGND + 3.3 V | 100 | μA | ||
RPD | Internal pulldown resistance | 100 | kΩ | |||
nFAULT OUTPUT (OPEN-DRAIN OUTPUT) | ||||||
VOL | Output low voltage | IO = 5 mA | LGND + 0.5 | V | ||
IOH | Output high leakage current | VO = LGND + 3.3 V | 1 | μA | ||
H-BRIDGE FETS | ||||||
RDS(ON) | HS FET on resistance | VM = 24 V, IO = 1 A, TJ = 25°C | 0.24 | Ω | ||
VM = 24 V, IO = 1 A, TJ = 85°C | 0.29 | 0.39 | ||||
LS FET on resistance | VM = 24 V, IO = 1 A, TJ = 25°C | 0.24 | ||||
VM = 24 V, IO = 1 A, TJ = 85°C | 0.29 | 0.39 | ||||
IOFF | Off-state leakage current | –2 | 2 | μA | ||
PROTECTION CIRCUITS | ||||||
IOCP | Overcurrent protection trip level | 3 | 5 | A | ||
tDEAD | Output dead time | 90 | ns | |||
tOCP | Overcurrent protection deglitch time | 5 | µs | |||
TTSD | Thermal shutdown temperature | Die temperature | 150 | 160 | 180 | °C |
NUMBER | PARAMETER | TEST CONDITIONS | MIN | MAX | UNIT |
---|---|---|---|---|---|
1 | t1 | Delay time, ENx high to OUTx high, INx = 1 | 130 | 330 | ns |
2 | t2 | Delay time, ENx low to OUTx low, INx = 1 | 275 | 475 | ns |
3 | t3 | Delay time, ENx high to OUTx low, INx = 0 | 100 | 300 | ns |
4 | t4 | Delay time, ENx low to OUTx high, INx = 0 | 200 | 400 | ns |
5 | t5 | Delay time, INx high to OUTx high | 300 | 500 | ns |
6 | t6 | Delay time, INx low to OUTx low | 275 | 475 | ns |
7 | tR | Output rise time, resistive load to VNEG | 30 | 150 | ns |
8 | tF | Output fall time, resistive load to VNEG | 30 | 150 | ns |